A solar cell comprises a substrate having an opposite first surface and a second surface, and the second surface has a first regions and a second regions adjacent in the first direction; a first passivation layer located on the first surface; a first doped layer and a tunnel oxide layer sequentially stacked in the first region; a first insulating layer located on a surface of the first doped layer away from the substrate; a second passivation layer located in the second region and extending to a surface of the first insulating layer away from the substrate; a second doped layer located on a surface of the second passivation layer away from the substrate, and a second insulating layer located between the second passivation layer and the first doped layer, the tunnel oxide layer in the first direction, a surface of the second insulating layer away from the substrate contacting with the first insulating layer.

A solar cell, including a crystalline silicon substrate; a first passivation contact step provided on a surface of the crystalline silicon substrate; a second passivation contact step provided on a surface of the first passivation contact step away from the crystalline silicon substrate and located corresponding to an electrode; a first passivation antireflection step provided on the surface of the first passivation contact step away from the crystalline silicon substrate and not in contact with the second passivation contact step; a second passivation antireflection step provided on a surface of the second passivation contact step away from the first passivation contact step; and the electrode including a side in contact with the first passivation contact step and another side penetrating through the second passivation contact step and the second passivation antireflection step.

The present application discloses a solar cell, a solar cell module, and a method for manufacturing a solar cell. In one example, a solar cell includes a semiconductor substrate, an ultra-thin dielectric layer, a passivation layer, a first electrode, and metallic crystals. The semiconductor substrate has a light receiving surface and a back surface opposite to the light receiving surface. The ultra-thin dielectric layer is formed on at least one of the back surface and the light receiving surface of the semiconductor substrate. The passivation layer is formed on the ultra-thin dielectric layer. The first electrode is formed on the passivation layer. The metallic crystals are formed in the passivation layer. The metallic crystals include a first metallic crystal, where an end surface of the first metallic crystal abuts against the ultra-thin dielectric layer, and another end surface of the first metallic crystal is connected to the first electrode.

Improvements in the technical field of solar panel (2) manufacturing are provided. To this effect, a process for manufacturing solar panels (2) is disclosed in which rows (4) of solar elements (3) are bonded together by an electrically conductive adhesive, with the electrically conductive adhesive being applied to the solar elements (3) during a transfer movement of the rows (4) of solar elements (3).

A method of forming a sandwich passivation layer (405) on a semiconductor device (400) comprising a bond pad (404) is provided. The method comprises forming a first layer (406) over a surface of the semiconductor device (400), removing a part of the first layer (406) to expose a surface of the bond pad (404), forming a second layer (407) over the first layer (406) and the surface of the bond pad (404), and forming a third layer (408) over the second layer (407), wherein the surface of the bond pad (404) is not in contact with the first layer (406) or third layer (408).

A heterojunction solar cell and a manufacturing method thereof are provided. The manufacturing method includes the following steps: A: forming a tunnel oxide layer on a first main surface of a semiconductor substrate; B: forming a first intrinsic polysilicon layer on the tunnel oxide layer; C: forming the first intrinsic polysilicon layer into a P-type polysilicon layer by diffusion annealing; D: removing a borosilicate glass (BSG) layer formed by the diffusion annealing; E: forming a mask layer on the P-type polysilicon layer; F: performing texturing and cleaning on a second main surface of the semiconductor substrate, and removing the mask layer; G: forming a second intrinsic amorphous silicon layer on the second main surface of the semiconductor substrate; and H: forming an N-type oxygen-doped microcrystalline silicon layer on the second intrinsic amorphous silicon layer.

A method includes forming, over a first surface of a semiconductor layer, a plurality of pixels configured to absorb radiation from a second surface of the semiconductor layer, the second surface of the semiconductor layer being opposite to the first surface of the semiconductor layer, with top surfaces of the plurality of pixels extending along and coplanar with the first surface. The method also includes forming a metallization layer over the first surface of the semiconductor layer, forming a first dielectric layer over the second surface of the semiconductor layer, and forming a color filter layer over the first dielectric layer. A refractive index of the semiconductor layer is greater than a refractive index of the color filter layer, which is greater than a refractive index of the first dielectric layer.

The disclosure discloses a solar cell and a preparation method for a solar cell. The preparation method for a solar cell comprises: sequentially forming a tunnel silicon oxide layer, an N-type doped polysilicon layer, and a front metal layer in an entire fashion on a front surface of a P-type silicon substrate; subjecting the entire front metal layer to a photoetching process to form a patterned front fine gate electrode; subjecting the tunnel silicon oxide layer and the N-type doped polysilicon layer in a region not covered by the front fine gate electrode to chemical etching to form a local tunnel silicon oxide layer and a local N-type doped polysilicon layer, wherein the widths of the local tunnel silicon oxide layer and the local N-type doped polysilicon layer are the same as the width of the front fine gate electrode. The preparation method may achieve an automatic and precise alignment of the front fine gate electrode with a local tunnel oxide passivated layer and a local polysilicon layer, thereby effectively reducing a difficulty in a preparation process of a local passivated contact emitter while ensuring the efficiency of the solar cell.

The present disclosure provides a hybrid heterojunction solar cell, a cell component, and a preparation method, the hybrid heterojunction solar cell comprises a semiconductor substrate having a substrate front surface and a substrate back surface opposite to each other, wherein the substrate front surface is close to a light-facing side of the cell and the substrate back surface is close to a backlight side of the cell; at least two composite layers located on one side of the substrate front surface, each composite layer includes a multi-layer structure of a tunneling layer and a doped polysilicon layer sequentially arranged in a direction gradually away from the substrate front surface. The hybrid heterojunction solar cell, cell component and a preparation method provided by this disclosure can achieve a stable passivation effect on the cell surface, reduce light absorption in the non-metallic areas of the cell, and achieve better process control at the same time.

A method for applying an electrical conductor to an electrically insulating substrate, the method comprising providing a flexible membrane with a pattern of grooves formed on a first surface thereof, and loading the grooves with a composition comprising particles of a conductive material. The composition is, or may be made, electrically conductive. Once the membrane is loaded, the grooved first surface of the membrane is brought into contact with a front or/and back surface of the substrate. A pressure is then applied between the substrate and the membrane(s) so that the composition loaded into the grooves adheres to the substrate. The membrane(s) may remain on the electrically insulating substrate. The electrically conductive particles in the composition can then be sintered to form a pattern of electrical conductors on the substrate, the pattern corresponding to the pattern formed in the membrane(s).