Provided are a back-contact battery and a manufacturing method thereof, and a photovoltaic module, which includes a silicon substrate with a front surface and a back surface; a first semiconductor layer with a second semiconductor opening region arranged back surface; and a second semiconductor layer. The back-contact battery further includes multiple insulating layers arranged at intervals along an X-axis direction of the back surface, wherein the insulating layers are arranged on the outer surface of the second semiconductor layer. In the X-axis direction, the insulating layer spans a side-surface edge of the second semiconductor opening region with both ends extending, respectively; the insulating layer has a span length W12 on the second semiconductor opening region, and the insulating layer has a span length W11 on the first semiconductor layer, satisfying a condition: W12:W11=0.1-10:1.

In examples, a sensor package comprises a die pad and a semiconductor die on the die pad. The semiconductor die has an active surface. The sensor package includes a light sensor on the active surface of the semiconductor die. The sensor package includes a mold compound covering the die pad, the semiconductor die, and a portion of the active surface. The sensor package includes a light filter covering the light sensor and abutting the mold compound. The light filter includes a combination of silicone, metal particles, and an organic dye. The combination is configured to reject light having a wavelength in a target wavelength range. The light filter has a thickness of at least 0.5 millimeters.

A solar cell and a photovoltaic module are disclosed, including: a substrate; a tunneling dielectric layer and a doped conductive layer disposed on the substrate, the tunneling dielectric layer being disposed between the doped conductive layer and a surface of the substrate, the doped conductive layer having a N-type or P-type doping element and having a plurality of first heavily doped regions spaced apart from each other and extending in a first direction, a doping concentration in the first heavily doped regions being greater than that in other regions of the doped conductive layer; a passivation layer disposed on a surface of the doped conductive layer facing away from the substrate; and a plurality of electrodes spaced apart from each other, extending in a second direction and penetrating the passivation layer to contact the doped conductive layer, at least two first heavily doped regions contacting a same electrode.

An FPA includes a substrate; a plurality of spaced-apart implant regions deposited in the substrate; a plurality of supplemental metal contacts, one supplemental metal contact of the plurality of supplemental metal contacts electrically connected to one implant region of the plurality of implant regions; a plurality of metal conductors electrically connecting the plurality of supplemental metal contacts; and a primary metal contact, electrically connected to the plurality of supplemental metal contacts by at least one of the metal conductors of the plurality of metal conductors. The pixel can include an Indium bump electrically connected to the primary metal contact.

An FPA includes a substrate; a plurality of spaced-apart implant regions deposited in the substrate; a plurality of supplemental metal contacts, one supplemental metal contact of the plurality of supplemental metal contacts electrically connected to one implant region of the plurality of implant regions; a plurality of metal conductors electrically connecting the plurality of supplemental metal contacts; and a primary metal contact, electrically connected to the plurality of supplemental metal contacts by at least one of the metal conductors of the plurality of metal conductors. The pixel can include an Indium bump electrically connected to the primary metal contact.

A solar cell and a photovoltaic module including the same are provided. The solar cell includes a substrate having a first surface and a second surface opposite to each other; a first passivation stack disposed on the first surface and including a first oxygen-rich dielectric layer, a first silicon-rich dielectric layer, a second oxygen-rich dielectric layer, and a second silicon-rich dielectric layer that are sequentially disposed in a direction away from the first surface, wherein an atomic fraction of oxygen in the first oxygen-rich dielectric layer is less than an atomic fraction of oxygen in the second oxygen-rich dielectric layer; a tunneling oxide layer disposed on the second surface; a doped conductive layer disposed on a surface of the tunneling oxide layer; and a second passivation layer disposed on a surface of the doped conductive layer.

A photovoltaic cell is provided, which includes a substrate; a first passivation layer and a first anti-reflection layer disposed on a front surface of the substrate; and a second passivation layer, a PPW layer and at least one silicon nitride layer Si.sub.uN.sub.v(1<u/v<4) disposed on a rear surface of the substrate. The at least one silicon nitride layer has a refractive index and a thickness in respective ranges of 1.9 to 2.5 and 50 nm to 100 nm. The second passivation layer includes at least one aluminum oxide layer Al.sub.xO.sub.y (0.8<y/x<1.6), a refractive index and a thickness of which are respectively in ranges of 1.4 to 1.6 and 4 nm to 20 nm. The PPW layer includes at least one silicon oxynitride layer Si.sub.rO.sub.sN.sub.t (r>s>t), a refractive index and a thickness of which are respectively in ranges of 1.5 to 1.8 and 1 nm to 30 nm.

Disclosed are a solar cell and a photovoltaic module. The solar cell includes a substrate, having a first surface, having a metal pattern region and a non-metal pattern region, a first passivation contact structure, located in the metal pattern region and including a first tunneling layer and a first doped conductive layer stacked in a direction away from the substrate, and a second passivation contact structure, including a second tunneling layer and a second doped conductive layer stacked in the direction away from the substrate, and having a first portion over the non-metal pattern region and a second portion over the first passivation contact structure, and a top surface of the first portion of the second passivation contact structure is not further away from the substrate than a top surface of the second portion of the second passivation contact structure.

An image sensor device is disclosed which includes a semiconductor layer having a first surface and a second surface, where the second surface is opposite to the first surface. The device includes a conductive structure disposed over the first surface, with a dielectric layer disposed between the conductive structure and the first surface. The device includes a first dielectric layer disposed over the second surface of the semiconductor substrate. The device includes a second dielectric layer disposed over the first dielectric layer. The device includes a color filter layer disposed over the second dielectric layer. In some embodiments, the thickness, refractive index, or both of the first dielectric layer and the thickness, refractive index, or both of the second dielectric layer may be collectively determined to cause incident radiation passing through the first dielectric layer and the second dielectric layer and to the plurality of pixels to have destructive interference.

The present disclosure relates to a solar cell and a solar cell panel including the same, and more particularly, to a solar cell with an improved structure and an improved manufacturing process and a solar cell panel including the same.