A method of wagering includes the steps of developing an NN grid based on selections from a bettor, the selections being based on different independent events conducted at different times; receiving a selection of at least one of the events; and displaying specific details of the selection. A non-transitory machine-readable storage medium, having encoded thereon program code, wherein, when the program code is executed by a machine, the machine implements the method is also provided. The method can be performed on any mobile computing device, computer, smart television, or other device properly equipped to perform and display such method.

The photovoltaic cell includes a silicon substrate, a first passivation layer, a second passivation layer, at least one silicon oxynitride layer, and at least one silicon nitride layer. The second passivation layer includes a first silicon oxide layer and at least one aluminum oxide layer, and a thickness of the at least one aluminum oxide layer is in a range of 4 nm to 20 nm. The number of silicon atoms is greater than the number of oxygen atoms in the at least one silicon oxynitride layer and the number of oxygen atoms is greater than the number of nitrogen atoms in the at least one silicon oxynitride layer. The first silicon oxide layer is disposed between the substrate and the at least one aluminum oxide layer, and a thickness of the first silicon oxide layer is in a range of 0.1 nm to 5 nm.

The invention is an apparatus for amplifying cooling through interaction with electromagnetic radiation for optical of objects and/or object surfaces with essentially three layers, which are a bottom layer that is comprised of a single or multi layered material configured to emit IR radiation; a middle layer that is comprised of a single or multi layered material configured to respond in anti-Stokes fluorescence upon absorption of electromagnetic radiation; and a top layer that is comprised of a single or multi layered material configured to reflect selected spectral band(s) and/or amplify selected spectral band(s) of the electromagnetic radiation transmittable to the middle layer.

A method for forming a semiconductor structure includes receiving a die; forming a dielectric layer to surround the die; removing a portion of the dielectric layer to form a first recess; disposing a first light blocking layer within the first recess; applying a dielectric paste over the first light blocking layer; removing a portion of the dielectric paste to form a second recess; disposing a second light blocking layer within the second recess; disposing a photoelectric device over the first light blocking layer and the second light blocking layer; forming a redistribution layer over the die, the dielectric layer and the photoelectric device; removing a portion of the redistribution layer to form a third recess over the photoelectric device; and coupling a light-conducting member to the photoelectric device through the third recess; wherein the second light blocking layer is separated from the first light blocking layer and the photoelectric device.

A faade element having a transparent cover plate and an opaque back element mounted on the cover plate. The cover plate has an outer surface facing the external environment and an inner surface facing the back element. The outer surface has a patterned region on which an interference layer is arranged. Alternatively, the interference layer is arranged on the inner surface. The inner surface and/or the outer surface have a patterned region having a height profile with hills and valleys. A portion of the patterned region is composed of flat segments that are inclined relative to the plane of the cover plate.

The present application discloses a zinc oxide-crystalline silicon laminated solar cell and a preparation method thereof, relates to the technical field of solar cells, and aims to solve the technical problem of low photoelectric conversion rate of existing solar cells. The zinc oxide-crystalline silicon laminated solar cell includes: a P-type silicon substrate layer; a front surface of the P-type silicon substrate layer being sequentially formed with, from bottom to top, a diffusion layer, an N-type zinc oxide layer, a first passivation layer, and a first antireflection layer; wherein the N-type zinc oxide layer is made of tetrapod-like N-type zinc oxide whisker powder as a raw material; and a back surface of the P-type silicon substrate layer being sequentially formed with, from top to bottom, a second passivation layer and a second antireflection layer; and an electrode, the electrode including a front electrode and a back electrode.

Disclosed are a solar cell, a method for manufacturing the same, and a photovoltaic module. The solar cell includes: a substrate having a front side and back side opposite to each other, a first doped layer and a second doped layer alternately arranged along a first direction on the back side, and a first electrode and a second electrode. The first doped layer and the second doped layer adjacent to the first doped layer are separated by an isolation region. A portion of the back side located at the isolation region is exposed. The first doped layer has a first slope sidewall facing the isolation region, and the second doped layer has a second slope sidewall facing the isolation region.

A device may include a filter array disposed on a substrate. The filter array may include a first mirror disposed on the substrate. The filter array may include a plurality of spacers disposed on the first mirror. A first spacer, of the plurality of spacers, may be associated with a first thickness. A second spacer, of the plurality of spacers, may be associated with a second thickness that is different from the first thickness. A first channel corresponding to the first spacer and a second channel corresponding to the second spacer may be associated with a separation width of less than approximately 10 micrometers (m). The filter array may include a second mirror disposed on the plurality of spacers.

Embodiments of the present application relate to a charge storage structure and a method for manufacturing the charge storage structure. The charge storage structure according to an embodiment includes a wafer, a first polar region, and a second polar region. The wafer has a first surface and a second surface opposite to the first surface, wherein the first surface has a first texture, and the second surface includes a first part with a second texture and a second part connected to the first part; the first polar region is configured to be in contact with the first part of the second surface; the second polar region is spaced apart from the first polar region and is configured to be adjacent to the second part of the second surface; and the first texture is different from the second texture. The charge storage structure and the method for manufacturing the charge storage structure provided in the embodiments of the present application have the advantages of lower manufacturing cost and higher manufacturing efficiency, and can flexibly set a texture on a front surface of a battery and a texture in an opening of a back surface of the battery according to specific needs, so as to meet different product requirements.

A solar cell, a method for producing a solar cell and a solar cell module are provided. The solar cell includes: a substrate having a front surface and a rear surface opposite to the front surface; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface and in a direction away from the front surface; wherein the first passivation layer includes a dielectric material; the second passivation layer includes a first silicon nitride Si.sub.mN.sub.n material, and a ratio of n/m is 0.51; the third passivation layer includes a silicon oxynitride SiO.sub.iN.sub.j material, and a ratio of j/i is 0.10.6; and a tunneling oxide layer and a doped conductive layer sequentially formed on the rear surface and in a direction away from the rear surface, wherein the doped conductive layer and the substrate have a doping element of a same conductivity type.