Patent classifications
H10F55/20
MANUFACTURING METHOD OF PACKAGING SUBSTRATE AND PACKAGING SUBSTRATE USING THE SAME
The present disclosure relates to a manufacturing method for a packaging substrate and a packaging substrate utilizing the method. The packaging substrate according to the present disclosure includes; a core layer including a glass substrate having first and second surfaces facing each other and a cavity portion; an insulating layer formed on the first surface; and a light transmitting portion formed on an upper surface of the insulating layer, wherein a light receiving portion is disposed in the cavity portion, the insulating layer includes a via penetrating in a thickness direction, and a portion of a lower surface of the light transmitting portion may abut on the via. Though it, the packaging substrate may be compactly manufactured by reducing the space for the configuration of electrically connecting the conventional photoelectric elements, and the effect of improving the sensing efficiency and performance of the photoelectric sensor relative to the space may occur.
Light-emitting modules and electronic devices including the same
An electronic assembly is provided. The electronic assembly includes a first circuit structure including a conductive structure, a second circuit structure disposed on the first circuit structure, a plurality of electronic elements disposed on the first circuit structure, and a connecting element disposed on the first circuit layer. The connecting element is disposed between two adjacent ones of the plurality electronic elements and electrically connected to the second circuit layer and one of the two adjacent ones of the plurality of electronic elements.
Optical components for electronic devices
An electronic device can include a housing defining an aperture, and an electromagnetic radiation emitter and an electromagnetic radiation detector disposed in the housing. An optical component can be disposed in the aperture and can include a first region of a first material having a first index of refraction, the first region aligned with the electromagnetic radiation emitter, a second region of the first material, the second region aligned with the electromagnetic radiation detector, and a bulk region surrounding a periphery of the first region and a periphery of the second region, the bulk region including a second material having a second index of refraction that is lower than the first index of refraction.
Attenuable resistive optical isolation circuit and device
An electrical optical isolation circuit and device characterized by a light source, a light-sensitive sensor, and a variable shield between the light source and the light-sensitive sensor, the variable shield being adjustable after assembly of the electrical circuit, and the variable shield adjustment providing attenuation of the electrical circuit output.
Attenuable resistive optical isolation circuit and device
An electrical optical isolation circuit and device characterized by a light source, a light-sensitive sensor, and a variable shield between the light source and the light-sensitive sensor, the variable shield being adjustable after assembly of the electrical circuit, and the variable shield adjustment providing attenuation of the electrical circuit output.
Display module and system applications
A display module and system applications including a display module are described. The display module may include a display substrate including a front surface, a back surface, and a display area on the front surface. A plurality of interconnects extend through the display substrate from the front surface to the back surface. An array of light emitting diodes (LEDs) are in the display area and electrically connected with the plurality of interconnects, and one or more driver circuits are on the back surface of the display substrate. Exemplary system applications include wearable, rollable, and foldable displays.
Wafer level packaging for proximity sensor
A proximity sensor includes a semiconductor die, a light emitting assembly, a redistribution layer, and an encapsulating layer. A surface of the semiconductor die includes a sensor area and contact pads. A lens is positioned over the sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads that face the redistribution layer. A side of the redistribution layer includes contact pads. Electrical connectors place each of the contact pads of the semiconductor die in electrical communication with a respective one of the contact pads of the redistribution layer. The encapsulating layer is positioned on the redistribution layer and at least partially encapsulates the semiconductor die, the lens over the sensor area of the semiconductor die, and the light emitting assembly.
Infrared sensor and method for manufacturing same, filter member for infrared sensor, and photocoupler
A filter member includes a first lead terminal, an optical filter, and a first mold member, and a light incidence surface and a light emission surface of the optical filter is exposed from the first mold member. A sensor member includes an IR sensor element, a second lead terminal and a second mold member. A light-receiving surface of the IR sensor element is exposed from the second mole member. The filter member is disposed on the sensor member so that the light emission surface of the optical filter faces the light-receiving surface of the IR sensor element in the sensor member.
Proximity Sensor Having Light-Blocking Structure in Leadframe and Method of Making Same
A method for fabricating a semiconductor proximity sensor includes providing a flat leadframe with a first and a second surface. The second surface is solderable. The leadframe includes a first and a second pad, a plurality of leads, and fingers framing the first pad. The fingers are spaced from the first pad by a gap which is filled with a clear molding compound. A light-emitting diode (LED) chip is assembled on the first pad and encapsulated by a first volume of the clear compound. The first volume outlined as a first lens. A sensor chip is assembled on the second pad and encapsulated by a second volume of the clear compound. The second volume outlined as a second lens. Opaque molding compound fills the space between the first and second volumes of clear compound and forms walls rising from the frame of fingers to create an enclosed cavity for the LED. The pads, leads, and fingers connected to a board using a layer of solder for attaching the proximity sensor.
Wafer level optical proximity sensors and systems including wafer level optical proximity sensors
Optoelectronic devices (e.g., optical proximity sensors), methods for fabricating optoelectronic devices, and systems including optoelectronic devices, are described herein. An optoelectronic device includes a light detector die that includes a light detector sensor area. A light source die is attached to a portion of the light detector die that does not include the light detector sensor area. An opaque barrier is formed between the light detector sensor area and the light source die, and a light transmissive material encapsulates the light detector sensor area and the light source die. Rather than requiring a separate base substrate (e.g., a PCB substrate) to which are connected a light source die and a light detector die, the light source die is connected to the light detector die, such that the light detector die acts as the base for the finished optoelectronic device. This provides for cost reductions and reduces the total package footprint.