According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.

Embodiments of the present invention provide an array substrate and a manufacturing method thereof and a touch display device. The array substrate comprises multiple data lines, multiple gate lines and multiple thin film transistors. The data lines and the gate lines intersect with each other in different planes to divide the array substrate into multiple pixel units, in each of which a thin film transistor is provided, wherein the array substrate further comprises multiple first touch sensing electrodes and multiple second touch sensing electrodes. The first touch sensing electrodes are provided below active regions of the thin film transistors and also serve as metal shielding layers for blocking light emitted by a backlight source. The first touch sensing electrodes and the second touch sensing electrodes intersect with each other in different planes, and capacitances are formed at intersections of the first touch sensing electrodes and the second touch sensing electrodes.

In one embodiment, a flexible device is provided. The flexible device may include a flexible substrate, a buffer layer, a light reflective layer, and a device layer. The buffer layer is located on the flexible substrate. The light reflective layer is located on the flexible substrate, wherein the light reflective layer has a reflection wavelength of 200 nm1100 nm, a reflection ratio of greater than 80%, and a stress direction of the light reflective layer is the same as a stress direction of the flexible substrate. The device layer is located on the light reflective layer and the buffer layer.

A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

A display device includes a plurality of pixels each including a light emitting region; and a light blocking layer provided on a side of the plurality of pixels on which light is output. In each of the plurality pixels, the light blocking layer has a plurality of openings allowing light from the light emitting region to be output. In one embodiment, in the light blocking layer, the openings adjacent to each other may be located line-symmetrically. In one embodiment, in the light blocking layer, the openings adjacent to each other may be located point-symmetrically.

The present invention provides a BOA liquid crystal panel. Both the color resist layer and the black matrix are located on the second substrate, the borders of the two adjacent color resist blocks in the color resist layer overlap to act the effect of light shielding and on this basis, a layer of black matrix is covered to achieve the double layer shielding, which effectively prevents the light leakage due to the exposure of the gap between the data line and the light shielding line when the BOA liquid crystal panel is applied for curve display and meanwhile, shortens the width of the light shielding line. The aperture ratio of the BOA liquid crystal panel is raised to reduce the cost of the backlight.

The present invention provides a LTPS TFT substrate, which includes a black matrix arranged on a first buffer layer of the LTPS TFT substrate to have an area where a TFT device is located is shielded by the black matrix thereby preventing the TFT device from being influenced by light irradiation, maintaining stability of the TFT device; and also saving the manufacturing process of a shielding metal layer, reducing one photo-mask, and lowering down manufacturing cost so as to allow the black matrix, in achieving the functionality of its own (shielding leaking light of the pixel), to also take the place of a shielding metal layer that is commonly adopted in the prior art to shield light for the TFT device and thus providing duality of functionality.

A display device is provided, which includes a substrate structure containing a substrate with a pixel region, and the pixel region includes an aperture region. A metal oxide semiconductor transistor is disposed over the substrate and includes a metal oxide semiconductor layer with a first channel region, a first gate electrode corresponding to the first channel region, and a silicon oxide insulating layer on the metal oxide semiconductor layer. The silicon oxide insulating layer includes an opening corresponding to the aperture region. A polysilicon transistor is disposed over the substrate. The display device also includes an opposite substrate structure, and a display medium between the substrate structure and the opposite substrate structure.

To make the dimension of an electrostatic protection circuit small with the same maintained high in sensitivity. The electrostatic protection circuit is of the configuration that a first diode and a second diode are connected in series, wherein a semiconductor layer owned by each diode is configured to be sandwiched between a gate electrode and a conductive light shielding film. The light shielding film is formed to overlap with the semiconductor layer and has a wider area than the semiconductor layer. This results in having a gate covering the semiconductor layer from an upper side and a back gate covering the semiconductor layer from a lower side, so that the sensitivity can be maintained high irrespective of decreasing the electrostatic protection circuit in dimension.

A method for manufacturing an eye-protecting liquid crystal display device is disclosed, in which an ultraviolet light emitting material and a ultraviolet absorbent are added in a first planarization layer of an array substrate and a second planarization layer of a color filter substrate. The ultraviolet absorbent absorbs short-wavelength blue light having a wavelength less than 400 nm and ultraviolet light emitting from a backlight module. The short-wavelength blue light and the ultraviolet light so absorbed excite the ultraviolet light emitting material to give off long-wavelength visible blue light having a wavelength greater than 400 nm. The first and second planarization layers are thus useful in converting ultraviolet light and short-wavelength blue light having a wavelength less than 400 nm, which could damage human eyes, into long-wavelength visible blue light having a wavelength greater than 400 nm that does not damage human eyes.