A light emitting device, includes: a substrate; a light emitting element on the substrate, the light emitting element having a first end portion and a second end portion arranged in a longitudinal direction; one or more partition walls disposed on the substrate, the one or more partition walls being spaced apart from the light emitting element; a first reflection electrode adjacent the first end portion of the light emitting element; a second reflection electrode adjacent the second end portion of the light emitting element; a first contact electrode connected to the first reflection electrode and the first end portion of the light emitting element; an insulating layer on the first contact electrode, the insulating layer having an opening exposing the second end portion of the light emitting element and the second reflection electrode to the outside; and a second contact electrode on the insulating layer.

Embodiments of the present disclosure relate to a thin film transistor array substrate and display device in which a semiconductor layer has a heterogeneous conductorization structure including heterogeneous conductorization portions having different electrical conductivity, and the gate insulator layer is not etched enough to expose the semiconductor layer between the source electrode part and the gate electrode part and between the drain electrode part and the gate electrode part, so that the possibility of damage to the semiconductor layer can be eliminated or reduced.

The present disclosure provides an electronic device comprising a substrate, and an electrode. The substrate comprises a base, a first metal layer disposed on the base, a second metal layer disposed on the first metal layer and electrically connected to the first metal layer, and an insulating layer disposed on second metal layer. The electrode is disposed on the insulating layer. The substrate comprises a high-level region and a low-level region. The insulating layer comprises an opening in the low-level region to expose a part of the second metal layer. A part of the electrode is disposed in the high-level region and another part of the electrode is disposed in the low-level region.

A liquid crystal display device includes a substrate, and a pixel electrode disposed on the substrate, the pixel electrode including a first stem portion that extends in a first direction, a second stem portion that extends in a second direction crossing the first direction and intersecting with the first stem portion, a plurality of branch portions, the branch portions extending to the first direction and the second direction from the first stem portion or the second stem portion, a first connection portion that connects distal ends of some of the branch electrodes to each other, extends in the first direction and intersects with the second stem portion, and a first edge electrode that is connected to one distal end of the second stem portion and extends in the first direction.

A method of preparing a display device including a plurality of pixels where a plurality of gate lines cross a plurality of data lines, respectively, each of the pixels including a thin film transistor (TFT) region and a display region, the method can include: forming a thin film transistor (TFT) in the TFT region; and forming a light emitting element for displaying images based on signals from the TFT in the display region, in which a metallic layer is disposed in the TFT region for electrical connection of the TFT; and a light absorbing layer configured to absorb at least part of light propagating toward the metallic layer is disposed on the metallic layer between the metallic layer and one of a gate insulating layer, an active layer, an interlayer dielectric layer and a substrate.

A display panel and a display device including the display panel are provided. The display panel includes data lines and scan lines arranged to be intersected, and a sensing antenna. The data lines and the scan lines are located in a display region of the display panel, and define multiple sub-pixels. The sensing antenna includes multiple sensing coils and is at least partly located in the display region of the display panel, and projections of the data lines and/or the scan lines cover projections of the sensing coils in a direction perpendicular to a surface of the display panel, in order to avoid affection on an aperture ratio of the display panel caused by the sensing coils located in the display region.

In accordance with some embodiments of the disclosed subject of matter, a TFT array substrate, a method for fabricating the TFT array substrate, and a display panel that comprises the TFT array substrate are provided. In some embodiments, the TFT array substrate comprises: a substrate; an active layer comprising a first region, a source region, a drain region, and a second region between the drain region and the first region; a gate electrode above the first insulating layer, wherein the gate electrode substantially covers the first region; and a first light-shielding layer that overlaps with the first region and substantially covers the second region.

Even when a light shielding film is provided between a transistor and a substrate, a threshold voltage of the transistor can be prevented or suppressed from being shifted. A display device includes light shielding films provided between a substrate and a semiconductor layer of a transistor including a gate electrode and the semiconductor layer. The semiconductor layer includes a source region and a drain region. Both of the light shielding films overlap the semiconductor layer when seen in a plan view, and are spaced apart from each other in a direction.

According to one embodiment, a display device includes a first light shielding layer, a second light shielding layer, a first semiconductor layer, a second semiconductor layer, a gate line, a first source line, a second source line, a switching element, and a pixel electrode, wherein an area in which the first light shielding layer and the pixel electrode are opposed to each other and an area in which the second light shielding layer and the pixel electrode are opposed to each other are equal in size.

An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.