The disclosure relates to a manufacturing method comprising the formation of elemental LED or photovoltaic structures on a first substrate, each comprising at least one p-type layer, an active zone and an n-type layer, formation of a first planar metal layer on the elemental structures, provision of a transfer substrate comprising a second planar metal layer, assembly of the elemental structures with the transfer substrate by bonding of the first and second metal layers by molecular adhesion at room temperature, and removal of the first substrate.

A solar cell formation method, and resulting structure, having a first film and a barrier film over a surface of a doped semiconductor, wherein the optical and/or electrical properties of the first film are transformed in-situ such that a resulting transformed film is better suited to the efficient functioning of the solar cell; wherein portions of the barrier film partially cover the first film and substantially prevent transformation of first film areas beneath the portions of the barrier film.

Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g., copper). A p-n heterojunction can be formed on the window layer, with the p-n heterojunction including a photovoltaic material (e.g., cadmium telluride) in an absorber layer. The dopant can then be diffused from the window layer into the absorber layer (e.g., via annealing).

A method of making an ultraviolet sensor includes applying a metal-containing solution to a substrate using a spin coating technique to form a metal-containing coat. The metal-containing coat is baked and pyrolyzed to form a metal-containing oxide film on the substrate. The metal-containing oxide film has a cubic crystalline structure suitable for ultraviolet photodetectors in flame detection applications.

Described herein is a method of using the buffer layer of a transparent conductive substrate as a dopant source for the n-type window layer of a photovoltaic device. The dopant source of the buffer layer distributes to the window layer of the photovoltaic device during semiconductor processing. Described herein are also methods of manufacturing embodiments of the substrate structure and photovoltaic device. Disclosed embodiments also describe a photovoltaic module and a photovoltaic structure with a plurality of photovoltaic devices having an embodiment of the substrate structure.

Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.

A method for manufacturing a solar cell module that includes a solar cell based on a semiconductor substrate with front and rear surfaces, includesfabricating a solar cell from the substrate, anddepositing on at least the rear surface a coating layer.

The deposition step includes applying a coating powder on at least the rear surface, forming an adhered powder layer on said surface.

The method includes after the deposition step: performing a first annealing process on the solar cell module for transforming the adhered powder layer in a pre-annealed coating layer.

Further the method includescreating open contacting areas on the solar cell by removal of the adhered powder layer at locations of contacting areas on the solar cell , wherein the removal precedes the first annealing process, or by masking contacting areas on the solar cell 1, wherein the masking precedes the deposition step.

A method for producing an optical device includes: forming an n-type layer over a substrate by a MOCVD method; forming a first active layer over the n-type layer by a MOCVD method; forming an intermediate layer over the first active layer by a MOCVD method; forming a second active layer having a band gap energy different from the band gap energy of the first active layer over the intermediate layer by a MOCVD method; forming a first p-type layer over the second active layer by a MOCVD method; forming a groove having a depth reaching the intermediate layer from a side of the first p-type layer; forming an electron blocking layer by sputtering over the intermediate layer exposed at a bottom surface of the groove; forming a semiconductor layer over the electron blocking layer by sputtering; and forming a second p-type layer as defined herein.

Wafer level solder ball bridge formation is used to provide electrical and thermal coupling between bond pads formed on substrates and bond pads formed on devices mounted on substrates. Solder balls anchored to solder-wettable bond pads enable sequential linking of laterally coupled solder balls over non-solder-wettable surface in the formation of solder ball bridge assemblies. Solder ball bridges formed between a device disposed on a substrate and a substrate enables thermal energy transfer and electrical interconnection between the device and the substrate.

A method for creating a photovoltaic cell, includes forming a first doped region in a semiconductor substrate having a first concentration of doping elements; forming, by ion implantation, alignment units, the largest size of which is smaller than one millimeter, and a second doped region, adjacent to the first region with a second concentration of doping elements; heat-treating the substrate to activate the doping elements and to form an oxide layer at the surface of the substrate, the second concentration and the heat treatment conditions being selected such that the oxide layer has a thickness above the alignment units that is larger, by at least 10 nm, than the thickness of the oxide layer above an area of the substrate adjacent to the alignment units; depositing an antireflection layer onto the oxide layer; and depositing an electrode onto the antireflection coating, through a screen, opposite the second region.