A modified tunnel oxide layer and a preparation method, a TOPCon structure and a preparation method, and a solar cell are provided. The modified tunnel oxide layer is SiO.sub.x subjected to plasma surface treatment, and a Si.sup.4+ content in the SiO.sub.x is greater than or equal to above 18%. The density of the interface state subjected to plasma surface treatment decreases, and compared with the silicon oxide layer prepared in the prior arts, boron has a low diffusion rate in the modified silicon oxide layer and hence the damaging effect of the boron on the tunnel oxide layer is reduced effectively, thereby improving the integrity of the silicon oxide layer and maintaining chemical passivation effect. The modified tunnel oxide layer significantly increases the performance indexes of the TOPCon structure.

A method for producing a back-contacting solar-cell module and a back-contacting solar-cell module. The method includes: providing a first stacked member, wherein the first stacked member includes a first sheet member; a surface of the first sheet member is provided with a plurality of first electrically conducting sites; the first stacked member further includes electrically conducting protrusions that are formed on the first electrically conducting sites of the first sheet member, gluing and insulating space rings at the peripheries of the first electrically conducting sites; providing a second stacked member, wherein the second stacked member includes a second sheet member; a surface of second sheet member is provided with a plurality of second electrically conducting sites; stacking and laminating first stacked member and second stacked member, the electrically conducting protrusions abut second electrically conducting sites, gluing and insulating space rings glue first sheet member and second sheet member together.

A manufacturing method of a CIGS light absorption layer for solar cell using chemical vapor deposition consists of: forming a lower electrode on an upper surface of a substrate; forming a copper thin film with a copper precursor on an upper surface of a lower electrode formed through the lower electrode forming step; forming an indium thin film with an indium precursor on an upper surface of a copper thin film layer formed through the copper thin film forming step; forming a gallium thin film with a gallium precursor on an upper surface of an indium thin film layer formed through the indium thin film forming step; and heat-treating in selenium atmosphere a laminate on which a gallium thin film layer is formed through the gallium thin film forming step.

A solar cell and a photovoltaic module is disclosed. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.

The present disclosure provides a hybrid heterojunction solar cell, a cell component, and a preparation method, the hybrid heterojunction solar cell comprises a semiconductor substrate having a substrate front surface and a substrate back surface opposite to each other, wherein the substrate front surface is close to a light-facing side of the cell and the substrate back surface is close to a backlight side of the cell; at least two composite layers located on one side of the substrate front surface, each composite layer includes a multi-layer structure of a tunneling layer and a doped polysilicon layer sequentially arranged in a direction gradually away from the substrate front surface. The hybrid heterojunction solar cell, cell component and a preparation method provided by this disclosure can achieve a stable passivation effect on the cell surface, reduce light absorption in the non-metallic areas of the cell, and achieve better process control at the same time.

The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.

The present invention discloses an integrated photodiode manufacturing method, a photodiode, and a photoelectric keyboard; the said method comprises the provision of a parallel support, and there is a plurality of pins on the said parallel support; on the parallel support, the infrared light chip and the visible light chip are fixed and installed; the electrodes of the said infrared chip and the said visible light chip are connected to the corresponding said pins respectively to form the electrical circuits independently with each other; the said infrared light chip and the said visible light chip are packaged with the packaging adhesive and/or the fluorescent adhesive to form the photodiode. The said packaging adhesive is transparent or translucent adhesive, and the said fluorescent adhesive is photoluminescence fluorescent material adaptable to the color of the said visible light chip; the packaged photodiode is baked and cured to form the photodiode integrating infrared light and visible light. By the present method, a kind of photodiode emitting infrared light and visible light simultaneously can be manufactured. In application, the present integrated photodiode can reduce the amount of components and reduce the cost.

A preparation method for a solar cell includes: providing a silicon substrate having a first surface and a second surface opposite to the first surface; sequentially depositing an oxide layer, a doped amorphous silicon layer and a silicon oxide mask layer on the first surface of the silicon substrate; annealing the silicon substrate to transform the doped amorphous silicon layer into a doped polysilicon layer; patterning the first surface using a laser to destroy or remove the silicon oxide mask layer and the doped polysilicon layer in a preset region and retaining the entire or part of the oxide layer to form a patterned region.

Embodiments of the present application relate to a charge storage structure and a method for manufacturing the charge storage structure. The charge storage structure according to an embodiment includes a wafer, a first polar region, and a second polar region. The wafer has a first surface and a second surface opposite to the first surface, wherein the first surface has a first texture, and the second surface includes a first part with a second texture and a second part connected to the first part; the first polar region is configured to be in contact with the first part of the second surface; the second polar region is spaced apart from the first polar region and is configured to be adjacent to the second part of the second surface; and the first texture is different from the second texture. The charge storage structure and the method for manufacturing the charge storage structure provided in the embodiments of the present application have the advantages of lower manufacturing cost and higher manufacturing efficiency, and can flexibly set a texture on a front surface of a battery and a texture in an opening of a back surface of the battery according to specific needs, so as to meet different product requirements.

The present invention relates to a novel multi-component organometallic compound, a composition containing same for a solution process, a method for manufacturing a thin film by using same, and a method for manufacturing an optical sensor by using same.