A semiconductor device includes a semiconductor stack, an insulating structure, a metal oxide structure and a metal structure. The semiconductor stack includes a first semiconductor structure, a second semiconductor structure and an active structure located between the first semiconductor structure and the second semiconductor structure. The insulating structure is disposed below the first semiconductor structure and comprising a first opening and a second opening. The metal oxide structure is disposed below the insulating structure and located in the first opening, and contacts the semiconductor stack to form a first contact surface therebetween. The metal structure is located in the second opening, and contacts the semiconductor stack to form a second contact surface therebetween. The first contact surface is separated from the second contact surface.

A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.25 and less than or equal to 6.

A semiconductor light emitting device that is excellent in radiating heat and that can be molded into a sealing shape having intended optical characteristics by die molding is provided. The semiconductor light emitting device includes: a lead frame including a plate-like semiconductor light emitting element mounting portion having an LED chip mounted on a main surface, and a plate-like metal wire connecting portion extending over a same plane as the semiconductor light emitting element mounting portion; a metal wire electrically connecting the LED chip and the metal wire connecting portion; a thermosetting resin molded by die molding or dam-sheet molding so as to completely cover the LED chip and the metal wire; and a resin portion provided to surround the lead frame and having the thickness not greater than the thickness of the lead frame.

The present invention relates to an optical device and a method for manufacturing the same. The technical object of the invention is to realize a surface emitting body which allows heat generated from a light-emitting chip to be easily dissipated, eliminates the need for an additional wiring layer, and allows a singular light emitting chips or a plurality of light emitting chips to be arranged in series, in parallel, or in series-parallel. The present invention discloses an optical device comprising: a substrate; a plurality of light emitting chips disposed on the substrate; a plurality of conductive wires which electrically connect the substrate with the light emitting chips such that the plurality of light emitting chips are connected to each other in series, in parallel or in series-parallel; and a protective layer which covers the plurality of light emitting chips and the plurality of conductive wires on the substrate.

Light emitter packages having multiple light emitter chips, such as light emitting diode (LED) chips, and related methods are provided. In one aspect, a light emitter package can include a submount, an array of light emitter chips disposed on a portion of the submount, and a lens provided over the submount and covering at least portions of the array. In some aspects, at least some of the light emitter chips can be adapted to emit light of a first dominant wavelength. In further aspects, at least some other light emitter chips are adapted to emit light of a second dominant wavelength that is different than the first dominant wavelength. In some aspects, the lens can be asymmetric. In some aspects, a collective center of the chips, or a center of an array of chips can be offset from a center of the asymmetric lens.

Vertical solid-state transducers (SSTs) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

The present invention relates to a method for providing a reflective coating (114) to a substrate (104) for a light-emitting device (112), comprising the steps of: providing (201) a substrate (104) having a first surface portion (116) with a first surface material and a second surface portion (106, 108) with a second surface material different from the first surface material; applying (202) a reflective compound (401) configured to attach to said first surface material to form a bond with the substrate (104) in the first surface portion (116) that is stronger than a bond between the reflective compound (401) and the substrate (104) in the second surface portion (106, 108); curing (203) said reflective compound (401) to form a reflective coating (114) having said bond between the reflective coating (114) and the substrate (104) in the first surface portion (116); and subjecting said substrate (104) to a mechanical treatment with such an intensity as to remove (205) said reflective coating (114) from said second surface portion (106, 108) while said reflective coating (114) remains on said first surface portion (116).

Elements are added to a light emitting device to reduce the stress within the light emitting device caused by thermal cycling. Alternatively, or additionally, materials are selected for forming contacts within a light emitting device based on their coefficient of thermal expansion and their relative cost, copper alloys being less expensive than gold, and providing a lower coefficient of thermal expansion than copper. Elements of the light emitting device may also be structured to distribute the stress during thermal cycling.

A light emitting device package is provided. The light emitting device package may include a main body having a cavity including side surfaces and a bottom, and a first reflective cup and a second reflective cup provided in the bottom of the cavity of the main body and separated from each other. A first light emitting device may be provided in the first reflective cup, and a second light emitting device may be provided in the second reflective cup.

A flip-chip high-voltage light-emitting device includes: a light emitting module composed of a plurality of flip-chip light emitting units in series with a first surface and a second surface opposite to each other, wherein, gap is formed between flip-chip light emitting units, and each comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer; a light conversion layer on the first surface of the light emitting module that covers side surfaces of light emitting units; an insulation layer that covers the second surface of the entire light emitting module and is only exposed to the n-type semiconductor layer in the first light emitting unit and the p-type semiconductor layer in the last light emitting unit of the light emitting module; a first support electrode and a second support electrode on the insulation layer.