A semiconductor device includes a first load terminal, a second load terminal and a semiconductor body coupled to the first load terminal and the second load terminal. The semiconductor body is configured to conduct a load current along a load current path between the first load terminal and the second load terminal. The semiconductor device further includes a control electrode electrically insulated from the semiconductor body and configured to control a part of the load current path, and an electrically floating sensor electrode arranged adjacent to the control electrode. The sensor electrode is electrically insulated from each of the semiconductor body, and the control electrode and is capacitively coupled to the load current path.

A power metal oxide semiconductor (MOS) transistor die with a temperature sensing function and an integrated circuit are provided. The power MOS transistor die has a control terminal, a phase terminal, a ground terminal and a temperature signal output terminal, and that further includes a power switch part and a temperature sensing part. The power switch part has: a first electrode coupled to the control terminal; a second electrode coupled to the ground terminal; and a third electrode coupled to the phase terminal. The temperature sensing part has: a first electrode; a second electrode coupled to the temperature signal output terminal; and a third electrode coupled to the third electrode of the power switch part. The power switch part and the temperature sensing part are configured as a MOS transistor made by a same manufacturing process, and are capable of sensing temperature precisely.

Semiconductor devices, and in particular protection structures for semiconductor devices that include sensor arrangements are disclosed. A semiconductor device may include a sensor region, for example a current sensor region that occupies a portion of an overall active area of the device. The current sensor region may be configured to provide monitoring of device load currents during operation. Semiconductor devices according to the present disclosure include one or more protection structures that are configured to allow the semiconductor devices to withstand transient voltage events without device failure. A protection structure may include an insulating layer that is provided in a transition region between a device region and the sensor region of the semiconductor device. In the example of an insulated gate semiconductor device, the insulating layer of the protection structure may include a material with a greater breakdown voltage than a breakdown voltage of a gate insulating layer.

A power metal oxide semiconductor (MOS) transistor die with a temperature sensing function and an integrated circuit are provided. The power MOS transistor die has a control terminal, a phase terminal, a ground terminal and a temperature signal output terminal, and that further includes a power switch part and a temperature sensing part. The power switch part has: a first electrode coupled to the control terminal; a second electrode coupled to the ground terminal; and a third electrode coupled to the phase terminal. The temperature sensing part has: a first electrode; a second electrode coupled to the temperature signal output terminal; and a third electrode coupled to the third electrode of the power switch part. The power switch part and the temperature sensing part are configured as a MOS transistor made by a same manufacturing process, and are capable of sensing temperature precisely.

Methods and devices for providing unclonable chip identification are provided. An integrated circuit device includes: a first transistor having a first gate oxide thickness; a second transistor having a second gate oxide thickness different than the first gate oxide thickness; and a reading circuit connected to the first transistor and the second transistor, wherein the reading circuit reads a difference in threshold voltage between the first transistor and the second transistor.

An integrated power transistor circuit includes a contact structure with a first section and a second section. The first section contacts doped regions of transistor cells in a cell array. The second section includes one or more first subsections which adjoin the first section and extend beyond the cell array in the region of selected transistor cells. A second subsection adjoins the one or more first subsections and forms a tapping line, for example for making contact with source regions of power transistor cells. In the region of the cell array, an electrode structure rests on the contact structure. This electrode structure is absent over the second section. The tapping line can thus be formed at a short distance from the electrode structure, with the result that the active chip area is only insubstantially reduced by the tapping line.

A semiconductor device includes a semiconductor body. The semiconductor body includes a load transistor part and a sensor transistor part. A first source region of the load transistor part and a second source region of the sensor transistor part are electrically separated from each other. A common gate electrode in a common gate trench extends into the semiconductor body from a first surface. A first part of the common gate trench is in the load transistor part, and a second part of the common gate trench is in the sensor transistor part. A field electrode in a field electrode trench extends into the semiconductor body from the first surface. A maximum dimension of the field electrode trench parallel to the first surface is smaller than a depth of the field electrode trench.

A power MOSFET and a sense MOSFET for detecting a current of the power MOSFET are formed in a semiconductor chip, and a source pad and a Kelvin pad are formed of a source electrode for the power MOSFET. The source pad is a pad for outputting the current flowing to the power MOSFET, and the Kelvin pad is a pad for detecting a source potential of the power MOSFET. The source electrode has a slit, and at least a part of the slit is arranged between the source pad and the Kelvin pad when seen in a plan view.

The generation of a variation in properties of vertical transistors is restrained. A vertical MOS transistor is formed in a semiconductor substrate. A first interlayer dielectric film and a first source wiring are formed over the front surface of the substrate. The first source wiring is formed over the first interlayer dielectric film, and is overlapped with the vertical MOS transistor as viewed in plan. Contacts are buried in the first interlayer dielectric film. Through the contacts, an n-type source layer of vertical MOS transistor is coupled with the first source wiring. Openings are made in the first source wiring.

A drive control device for two semiconductor elements having a transistor structure and a diode structure with a common energization electrode includes: a current detection device outputting a current detection signal of the semiconductor elements; and a first control device outputting a gate drive signal from when a first time period has elapsed from a starting time to when a second time period has elapsed from the starting time, at which an off-command signal is input after it is determined that a current flows through the semiconductor elements in a forward direction of the diode structure during a time period for which an on-command signal is input to the semiconductor elements. The first and the second time periods are preliminary set not to generate an arm short-circuit between two semiconductor elements.