The present invention proposes an image sensor, a monitoring system and a method for designing an image sensor, the image sensor including: a color filter, wherein, for light in infrared wavebands, the color filter only allows particular-wavelength infrared light to pass, and the color filter includes multiple n-color filters, wherein each filter corresponds to one color, the multiple n-color filters are used for dividing visible light in incident light into n-color light; and a light-sensitive chip, including a signal processing circuit and multiple light-sensitive units, the multiple light-sensitive units are respectively used for sensing intensity of light transmitting through the multiple n-color filters and generating electric signals corresponding to the light transmitting through the multiple n-color filters, the signal processing circuit is used for processing the electric signals for imaging, wherein a gain ratio of the signal processing circuit to the electric signals is A1: A2: . . . : Ai: . . . : Aj: . . . : An, wherein an intensity transmittance of the multiple n-color filters to the particular-wavelength infrared light is M1: M2(A1/A2): . . . : Mi(A1/Ai): . . . : Mj(A1/Aj): . . . : Mn(A1/An). The image sensor of the present invention increases an application range of the image sensor by adjusting optical characteristics of the color filter to achieve color cast desired by a user.

The present invention has an object of improving the operation stability of a semiconductor device that detects radiations without decreasing the yield thereof. A semiconductor device includes an active matrix substrate (50) including a plurality of TFTs (10) and a plurality of pixel electrode (20); a photoelectric conversion substrate (62) located to face the active matrix substrate (50); an upper electrode (64) provided on a surface of the photoelectric conversion substrate (62) opposite to the active matrix substrate (50); and a plurality of connection electrodes (72) provided between the active matrix substrate (50) and the photoelectric conversion substrate(62), the plurality of connection electrodes (72) being formed of metal material. Each of the plurality of connection electrodes (72) is in direct contact with any of the plurality of pixel electrodes (20) and with the photoelectric conversion substrate (62), overlaps a semiconductor layer (14) of any of the plurality of TFTs (10) as seen in a direction normal to the active matrix substrate (50), and contains a metal element having an atomic number of 42 or greater and 82 or smaller.

Imaging sensors that detect infrared and visible light are provided herein. In one example, an imaging sensor is presented that includes a semiconductor substrate comprising an array of pixel structures for concurrently sensing infrared light and visible light. Each of the pixel structures include a first pixel element configured to detect the infrared light and a second pixel element configured to detect the visible light. Each of the pixel structures further include a shared output circuit that couples the first pixel element and the second pixel element such that a first output state presents a first signal corresponding to detected infrared light of the first pixel element and a second output state presents a second signal corresponding to detected visible light of the second pixel element.

It is possible to provide a composition that has absorption in a near infrared region and that can form a film having transparency in a visible region. Provided are a cured film, a near infrared ray absorption filter, a solid-state imaging device, an infrared sensor, and a compound. Provided is a composition including: a near infrared ray absorption substance of which a maximum absorption wavelength is in a wavelength range of 700 to 1,000 nm and a value obtained by dividing absorbance at a wavelength of 550 nm by absorbance at the maximum absorption wavelength is 0.015 or less. In the near infrared ray absorption substance, a half-width of the maximum absorption wavelength is preferably 60 nm or less. The near infrared ray absorption substance is preferably a compound having a pyrrolopyrrole skeleton and more preferably a pyrrolopyrrole boron compound.

A circuit includes a sensing unit, a first group of switching units, and a second group of switching units. The sensing unit is configured to receive light and generate a sensing voltage at a sensing node in response to the light. The first group of switching units is coupled to the sensing node, and configured to generate a first transfer voltage to a first node and generate a first auxiliary voltage to a second node. At least one of the first transfer voltage and the first auxiliary voltage is read by a readout circuit. The second group of switching units is coupled to the sensing node, and configured to generate a second transfer voltage to a third node and generate a second auxiliary voltage to a fourth node. At least one of the second transfer voltage and the second auxiliary voltage is read by the readout circuit.

An infrared image sensor component includes at least one III-V compound layer on the semiconductor substrate, in which the portion of the III-V compound layer(s) uncovered by the patterns is utilized as active pixel region for detecting the incident infrared ray. The infrared image sensor component includes at least one transistor coupled to the active pixel region, and charge generated by the active pixel region is transmitted to the transistor.

A novel head mounted display includes a display/image sensor. In a particular embodiment the display/image sensor is formed on a single silicon die, which includes display pixels and light sensor pixels. The display pixels and light sensor pixels are each arranged in rows and columns, and the arrays of light sensor pixels and display pixels are interlaced. The center of each light sensor pixel is located between adjacent rows and adjacent columns of display pixels.

The present invention proposes an image sensor and a monitoring system, the image sensor including: a color filter, wherein, for light in infrared wavebands, the color filter only allows particular-wavelength infrared light to pass, and the color filter includes multiple n-color filters, wherein each filter corresponds to one color, used for dividing visible light in incident light into n-color light; and a light-sensitive chip including a signal processing circuit and multiple light-sensitive units, wherein the multiple light-sensitive units are respectively used for sensing intensity of light transmitting through the multiple n-color filters and generating electric signals corresponding to the light transmitting through the multiple n-color filters, the signal processing circuit is used for processing the electric signals for imaging, and a gain ratio of the signal processing circuit to the electric signals is A1:A2: . . . :An, wherein an intensity transmittance of the multiple n-color filters of the color filter to the particular-wavelength infrared light is 1:(A1/A2): . . . :(A1/An). Through the image sensor of the present invention, the color of a shot image is the same as that observed by human eyes; and when visible light is weak while infrared light is strong, a clear black-and-white image can be shot, which has a wide application range and is convenient and reliable.

A sensor includes a plurality of image sensors, wherein each image sensor of the plurality of image sensors is configured to detect a first spectrum of light. The sensor further includes a depth sensing pixel bonded to each image sensor of the plurality of image sensors, wherein the depth sensing pixel is configured to detect a second spectrum of light different from the first spectrum.

The present invention relates to a method for manufacturing a bispectral matrix detector comprising the following steps: providing a monotype matrix detector; depositing, on the sensitive surface (3) of the monotype matrix detector, a dual-band interference filter (5) allowing the radiation in the first and second frequency bands to pass therethrough; depositing a first interference filter (4a) vertically in line with photosites (31a) intended for sensing in the first frequency band; depositing a second interference filter (4b) vertically in line with photosites (31b) intended for sensing in the second frequency band, one of the first (4a) and second (4b) interference filters being a low-pass filter cutting the second frequency band, and the other a high-pass filter cutting the first frequency band.