Some implementations described herein include a complementary metal oxide semiconductor image sensor device and techniques to form the complementary metal oxide semiconductor image sensor device. The complementary metal oxide semiconductor image sensor device includes a includes a first array of photodiodes stacked over a second array of photodiodes. A polarization structure is between the first array of photodiodes and the second array of photodiodes. Signaling generated by the first array of photodiodes (e.g., signaling corresponding to unpolarized light waves) may be multiplexed with signaling generated by the second array of photodiodes (e.g., signaling corresponding to polarized light waves). The complementary metal oxide semiconductor image sensor device further includes a filter structure that filters visible light waves and near infrared light waves amongst the first array of photodiodes and the second array of photodiodes.

An optical device includes a nanostructure body which induces surface plasmon resonance when irradiated with light, an oxide layer which is in contact with the nanostructure body, an alloy layer which is in contact with the oxide layer and which is made of an alloy containing a first metal and a second metal that are different in work function from each other, and an n-type semiconductor which is in Schottky contact with the alloy layer.

The re is provided a fingerprint identification module, including a substrate having a fingerprint identification area and a peripheral area; a photoelectric sensing structure in the fingerprint identification area, and including pixel units; each pixel unit includes a thin film transistor having a gate electrode coupled to a corresponding gate line and a first electrode coupled to a corresponding signal sensing line; the fingerprint identification area includes a photosensitive region, the pixel unit in the photosensitive region further includes a photoelectric sensor including a third electrode, a photosensitive pattern and a fourth electrode which are sequentially stacked along a direction away from the substrate, and the third electrode is coupled to a second electrode of the thin film transistor in the same pixel unit as that where the photoelectric sensor is located; an area ratio of the photoelectric sensor to the pixel unit corresponding thereto ranges from 40% to 90%.

A back-illuminated photo detector array (PDA) includes a front side and a back side. The back side receives optical energy incident on the back side at an incident direction. The front side includes a detection layer that includes detection structures and a plurality of photon-trapping nanostructures (PTN). The PTN cause optical energy incident on the back side to disperse in a direction perpendicular to the incident direction, and thereby improve an absorption efficiency of the back-illuminated PDA.

A photoelectric conversion device is provided. The device includes: a semiconductor layer having a photoelectric conversion element; a wiring structure; and contact plug that connect the semiconductor layer and a wiring pattern arranged in a wiring layer closest to the semiconductor layer among wiring layers included in the wiring structure. A light reflecting layer through which the contact plug penetrate is arranged between the wiring layer and the semiconductor layer, and the light reflecting layer has a periodic structure in which a first layer constituted by one of a dielectric and a semiconductor and a second layer constituted by one of a dielectric and a semiconductor that are different from the first layer are periodically stacked.

Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for eye gesture recognition. In one aspect, a method includes obtaining an electrical signal that represents a measurement, by a photodetector, of an optical signal reflected from an eye and determining a depth map of the eye based on phase differences between the electrical signal generated by the photodetector and a reference signal. Further, the method includes determining gaze information that represents a gaze of the eye based on the depth map and providing output data representing the gaze information.

In general, the disclosure describes sensor including an intermediate band layer including a plurality of dopant particles, wherein the intermediate band layer is configured to absorb a portion of incident electromagnetic radiation comprising a first range of wavelengths greater than 1100 nm and form optically induced minority carriers. The sensor also includes a photo-sensitive silicon substrate configured to detect the electromagnetic radiation comprising a second range of wavelengths less than or equal to 1100 nm.

The invention relates to an infrared photodetector (1), comprising an electron transport layer (4) and an infrared photon absorption layer (5) for generating an electrical signal, characterized in that the electron transport layer (4) comprises nanocrystals of a compound selected from SnO.sub.2, ZnO, CdS, CdSe, aluminium-doped zinc oxide, Cr.sub.2O.sub.3, CuO, CuO.sub.2, Cu.sub.2O.sub.3, ZrO.sub.2, and mixture thereof and heterostructure thereof and alloy thereof, and in that the infrared photon absorption layer (5) comprises nanocrystals of a compound selected from HgS, HgSe, HgTe, PbS, PbSe, PbTe, Ag.sub.2S, Ag.sub.2Se, Ag.sub.2Te, InAs, InGaAs, and InSb, and mixture thereof, and heterostructure thereof and alloy thereof.

The present invention has an object of improving the operation stability of a semiconductor device that detects radiations without decreasing the yield thereof. A semiconductor device includes an active matrix substrate (50) including a plurality of TFTs (10) and a plurality of pixel electrode (20); a photoelectric conversion substrate (62) located to face the active matrix substrate (50); an upper electrode (64) provided on a surface of the photoelectric conversion substrate (62) opposite to the active matrix substrate (50); and a plurality of connection electrodes (72) provided between the active matrix substrate (50) and the photoelectric conversion substrate(62), the plurality of connection electrodes (72) being formed of metal material. Each of the plurality of connection electrodes (72) is in direct contact with any of the plurality of pixel electrodes (20) and with the photoelectric conversion substrate (62), overlaps a semiconductor layer (14) of any of the plurality of TFTs (10) as seen in a direction normal to the active matrix substrate (50), and contains a metal element having an atomic number of 42 or greater and 82 or smaller.

An image sensor pixel includes a photodiode region formed in a semiconductor layer, a pinning layer and a depletion adjustment layer. The photodiode region receives visible and infrared light from a light incident side of the image sensor pixel. The pinning layer is disposed between a front surface of the semiconductor layer and the photodiode region, while the depletion adjustment layer is disposed between the pinning layer and the photodiode region. The depletion adjustment layer is configured to adjust a depletion region of the photodiode region to reduce charge carriers induced in the photodiode region by the received infrared light.