A method for manufacturing a semiconductor optical device for a LIDAR sensor system for a vehicle includes (a) forming a plurality of microlens structures at respective first locations on a first major surface of respective first and second semiconductor wafers. The method includes (b) forming a plurality of notch structures at respective second locations on a second major surface of the respective first and second semiconductor wafers, wherein the respective second locations on the second major surface are substantially opposite the respective first locations on the first major surface. The method includes (c) bonding the second major surface of the first semiconductor wafer to the second major surface of the second semiconductor wafer to form a semiconductor wafer pair. The method includes (d) dicing the semiconductor wafer pair to segment the semiconductor wafer pair into a plurality of individual semiconductor optical devices.

Disclosed are an image sensor and an image sensing method. The image sensor includes a first pixel circuit. The first pixel circuit includes a first driving transistor, a first selection transistor, a first transfer transistor, a first reset transistor and a first sensing unit. A control terminal of the first selection transistor is used for receiving a first selection signal. A control terminal of the first transmitting transistor is used for receiving a first transmitting signal. The image sensing method includes the following steps: receiving a first reset signal during a reset period through a control terminal of the first reset transistor; and receiving a first ramp signal during a sensing period through a control terminal of the first reset transistor.

A method for fabricating an image sensor comprises: forming an array of sensor elements on a sensor-wafer substrate; forming a readout circuit on the sensor-wafer substrate; forming a plurality of signal lines between the array of sensor elements and the readout circuit; forming a solid-state cooler between the array of sensor elements and the readout circuit; bonding a carrier-wafer substrate to an epitaxial structure of the sensor-wafer substrate; etching the carrier-wafer substrate in the thermal-barrier zone to form a carrier-wafer trench between the array of sensor elements and the readout circuit; reducing the thickness of the sensor-wafer substrate; and etching the sensor-wafer substrate in the thermal-barrier zone to form a sensor-wafer trench between the array of sensor elements and the readout circuit.

An optical semiconductor package includes a first chip, a second chip, a first resin portion formed to cover a side surface of the first chip, a second resin portion formed to cover a side surface of the second chip, a first terminal provided on a first inner surface of the first chip, a second terminal provided on a second inner surface of the second chip, and a first wiring electrically connected to the first terminal, passing through an inside of the first resin portion, and extending from a first inner surface side to a first outer surface side of the first chip in a facing direction in which the first inner surface and the second inner surface face each other. The second chip is an optical element. The first resin portion and the second resin portion are integrally provided or continuously provided via another member.

It is a main object to provide an image sensor device that can reduce the risks of damage to and/or contamination of its components during manufacturing. The image sensor device according to the present technology is an image sensor device including a substrate and a plurality of sensor units arranged in at least one axis direction on the substrate. Each of the plurality of sensor units includes a pixel chip including a plurality of pixels, and a translucent cover configured to cover the pixel chip. With the image sensor device according to the present technology, there can be provided an image sensor device that can reduce the risks of damage to and/or contamination of its components during manufacturing.

A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

A semiconductor package and a method of manufacturing thereof is disclosed. The package includes a package substrate having a die attach region with a die attached thereto. A protective cover with a cover adhesive is disposed over a sensor region of the die and attached to the die by the cover adhesive. The cover adhesive is disposed in a cap bonding region of the protective cover.

The present disclosure relates to image sensors. An example image sensor includes a first substrate, a transmission transistor, a second substrate, multiple transistors, multiple wires, and a deep node. The first substrate includes a first side, a second side facing the first side, and a photoelectric conversion area. The transmission transistor is disposed on the first side of the first substrate. The second substrate includes a first side and a second side facing each other. The transistors are disposed on the first side of the second substrate and connected with the transmission transistor. The wires are disposed on the second side of the second substrate. The deep node penetrates the second substrate. The first side of the first substrate and the first side of the second substrate face each other. The transistors and one or more wires are connected through the deep node.

An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

The present disclosure provides a surface modification method for reducing wafer defects, including: providing a wafer, and performing a first time wet etching for a silicon surface of the wafer; performing an oxidization treatment for the silicon surface of the wafer to reduce surface roughness, and then cleaning the silicon surface using a cleaning solution, so as to remove possible particle contamination resulting from a previous process; and performing a second time wet etching for the silicon surface of the wafer. In a wafer thinning process applied in the present disclosure, the oxidation treatment for the silicon surface of the wafer is inserted between two times of wet etching for the silicon surface of the wafer, so as to reduce the roughness of the silicon surface of the wafer and improve the thickness uniformity of the wafer after the thinning, thereby effectively reducing surface defects.