An energy storage device comprising one or more solid state dielectric layers for use as a high-density electrical energy storage device.

A display device includes a first pixel circuit including a light-receiving element and a first transistor, and a second pixel circuit including a light-emitting element and a second transistor. The light-receiving element includes an active layer between a first pixel electrode and a common electrode, and the light-emitting element includes a light-emitting layer between a second pixel electrode and the common electrode. The first pixel electrode and the second pixel electrode are positioned on the same plane. The active layer and the light-emitting layer contain different organic compounds. A source or a drain of the first transistor is electrically connected to the first pixel electrode, and a source or a drain of the second transistor is electrically connected to the second pixel electrode. The first transistor includes a first semiconductor layer containing a metal oxide, and the second transistor includes a second semiconductor layer containing polycrystalline silicon.

There is provided an image sensor package including a substrate, a light source, a light sensor, a cover and a microstructure component. The light source and the light sensor are arranged on the substrate. The cover covers upon the substrate and has accommodation space for accommodating the light source and the light sensor. An upper surface of the cover has a recess. The microstructure component is arranged inside the recess to direct stray light toward a direction far from the light sensor.

A system in a package (SIP) (195) includes carrier layer regions (107) that have a dielectric material with a metal post (109) therethrough, where adjacent carrier layer regions define a gap. A driver IC die (110) is positioned in the gap having nodes connected to bond pads (111) exposed by openings in a top side of a first passivation layer (113), with the bond pads facing up. A dielectric layer (116) is on the first passivation layer and carrier layer region (107) that includes filled through vias (116a) coupled to the bond pads and to the metal post (109). A light blocking layer (118) is on sidewalls and a bottom of the substrate. A first device (140) includes a light emitter that has first bondable features (151a). The light blocking layer blocks at least 90% of incident light. The first bondable features are flipchip mounted to a first portion of the bond pads.

A system in a package (SIP) (195) includes carrier layer regions (107) that have a dielectric material with a metal post (109) therethrough, where adjacent carrier layer regions define a gap. A driver IC die (110) is positioned in the gap having nodes connected to bond pads (111) exposed by openings in a top side of a first passivation layer (113), with the bond pads facing up. A dielectric layer (116) is on the first passivation layer and carrier layer region (107) that includes filled through vias (116a) coupled to the bond pads and to the metal post (109). A light blocking layer (118) is on sidewalls and a bottom of the substrate. A first device (140) includes a light emitter that has first bondable features (151a). The light blocking layer blocks at least 90% of incident light. The first bondable features are flipchip mounted to a first portion of the bond pads.

A detection device includes a substrate, a light-emitter, and a light receiver. The substrate includes a first surface area and a second surface area, in which the first surface area has a first reflectance greater than a second reflectance of the second surface area. The light emitter is disposed on the first surface area, and the light receiver is disposed on the second surface area. The light receiver has a third reflectance which is substantially the same as the second reflectance of the second surface area.

A detection device includes a substrate, a light-emitter, and a light receiver. The substrate includes a first surface area and a second surface area, in which the first surface area has a first reflectance greater than a second reflectance of the second surface area. The light emitter is disposed on the first surface area, and the light receiver is disposed on the second surface area. The light receiver has a third reflectance which is substantially the same as the second reflectance of the second surface area.

Technologies for chip-to-chip optical data transfer are disclosed. In the illustrative embodiment, microLEDs on a first chip are used to send data to microphotodiodes on a second chip. The beams from the microLEDs may be sent to the microphotodiodes using an optical bridge, microprisms, a channel through a substrate, a channel defined in a substrate, etc. The microLEDs may be used for high-speed data transfer with low power usage. A chip may include a relatively large number of microLEDs and/or microphotodiodes, allowing for a large bandwidth connection. MicroLEDs and microphotodiodes may be used to connect different parts of the same chip, different chips on the same package, different packages on the same device, or different chips on different devices.

An efficient monolithic optocoupler device that includes a photovoltaic region, an electrically isolating region, and a light emitting region deposited on a substrate in a single stack. The electrically isolating region (e.g., one or more diodes or resistive semiconductor layers) allows photons to pass from the light emitting region to the photovoltaic region while blocking electrical current between those regions. In some embodiments, the optocoupler device includes a reflector on a side of the light emitting region (opposite the photovoltaic region) that reflects photons emitted by the light emitting region back toward the photovoltaic region. The optocoupler device may also include a reflector on a side of the photovoltaic region (opposite the light emitting region) that reflects photons emitted by the light emitting region back toward the photovoltaic region. In other embodiments, the optocoupler device includes two photovoltaic regions sandwiching the light emitting region.

An efficient monolithic optocoupler device that includes a photovoltaic region, an electrically isolating region, and a light emitting region deposited on a substrate in a single stack. The electrically isolating region (e.g., one or more diodes or resistive semiconductor layers) allows photons to pass from the light emitting region to the photovoltaic region while blocking electrical current between those regions. In some embodiments, the optocoupler device includes a reflector on a side of the light emitting region (opposite the photovoltaic region) that reflects photons emitted by the light emitting region back toward the photovoltaic region. The optocoupler device may also include a reflector on a side of the photovoltaic region (opposite the light emitting region) that reflects photons emitted by the light emitting region back toward the photovoltaic region. In other embodiments, the optocoupler device includes two photovoltaic regions sandwiching the light emitting region.