Patent classifications
H10F55/255
Optoelectronic device manufacturing method
A method of manufacturing an optoelectronic device, including the steps of: a) forming a photonic device including a plurality of photonic components on a first substrate; b) forming an electronic device including a semiconductor layer coating a second substrate; c) after steps a) and b), bonding the electronic device to the photonic device by direct bonding, and then removing the second substrate; d) after step c), forming, on the upper surface side of the electronic device, electric connection metallizations, the method further including: after step a) and before step c), a step of deposition of a metal layer continuously extending over the entire upper surface of the device.
Image sensor package and endoscope
An image sensor package includes a substrate, an image sensor, and at least one light-emitting element. The substrate has a plurality of electric-conduction contacts. The image sensor is arranged on the substrate electrically connected with the substrate. The light-emitting element includes a spacer and a light-emitting diode. The spacer has a plurality of electric-conduction contacts. The light emitting diode is arranged on the spacer and electrically connected with the spacer. The spacer is arranged on the substrate and electrically connected with the substrate. The spacer has a predetermined thickness, so that the height of a light input surface of the image sensor is larger than or equal to the height of a light output surface of the light-emitting diode. The above-mentioned image sensor package favors optimization of illumination. An endoscope including the above-mentioned image sensor package is also disclosed.
Image sensor package and endoscope
An image sensor package includes a substrate, an image sensor, and at least one light-emitting element. The substrate has a plurality of electric-conduction contacts. The image sensor is arranged on the substrate electrically connected with the substrate. The light-emitting element includes a spacer and a light-emitting diode. The spacer has a plurality of electric-conduction contacts. The light emitting diode is arranged on the spacer and electrically connected with the spacer. The spacer is arranged on the substrate and electrically connected with the substrate. The spacer has a predetermined thickness, so that the height of a light input surface of the image sensor is larger than or equal to the height of a light output surface of the light-emitting diode. The above-mentioned image sensor package favors optimization of illumination. An endoscope including the above-mentioned image sensor package is also disclosed.
OPTOELECTRONIC DEVICE AND METHOD FOR OPERATING AN OPTOELECTRONIC DEVICE
An optoelectronic device is provided, the optoelectronic device including a radiation source that is configured to emit electromagnetic radiation, a sensor that is configured to detect electromagnetic radiation, a carrier on which the radiation source and the sensor are arranged, and a deflection element, wherein the sensor is arranged between the deflection element and the carrier, the radiation source has a main plane of extension that extends parallel to a main plane of extension of the sensor, and the deflection element has at least one deflection surface that encloses an angle of more than 0 with the main plane of extension of the sensor. Furthermore, a method for operating an optoelectronic device is provided.
OPTOELECTRONIC DEVICE AND METHOD FOR OPERATING AN OPTOELECTRONIC DEVICE
An optoelectronic device is provided, the optoelectronic device including a radiation source that is configured to emit electromagnetic radiation, a sensor that is configured to detect electromagnetic radiation, a carrier on which the radiation source and the sensor are arranged, and a deflection element, wherein the sensor is arranged between the deflection element and the carrier, the radiation source has a main plane of extension that extends parallel to a main plane of extension of the sensor, and the deflection element has at least one deflection surface that encloses an angle of more than 0 with the main plane of extension of the sensor. Furthermore, a method for operating an optoelectronic device is provided.
Photo-detecting apparatus with low dark current
An optical sensing apparatus is provided. The optical sensing apparatus includes a semiconductor substrate composed of a first material; a transmitter-receiver set supported by the semiconductor substrate and including: (1) a photodetector includes an absorption region composed of a second material including germanium and configured to receive an optical signal and to generate photo-carriers in response to the optical signal; and (2) a light source including a light-emitting region composed of a third material including germanium and configured to emit a light toward a target; wherein the absorption region includes at least a property different from a property of the light-emitting region, wherein the property includes strain, conductivity type, peak doping concentration, or a ratio of the peak doping concentration to a peak doping concentration of the semiconductor substrate; wherein the first material is different from the second material and the third material.
Photo-detecting apparatus with low dark current
An optical sensing apparatus is provided. The optical sensing apparatus includes a semiconductor substrate composed of a first material; a transmitter-receiver set supported by the semiconductor substrate and including: (1) a photodetector includes an absorption region composed of a second material including germanium and configured to receive an optical signal and to generate photo-carriers in response to the optical signal; and (2) a light source including a light-emitting region composed of a third material including germanium and configured to emit a light toward a target; wherein the absorption region includes at least a property different from a property of the light-emitting region, wherein the property includes strain, conductivity type, peak doping concentration, or a ratio of the peak doping concentration to a peak doping concentration of the semiconductor substrate; wherein the first material is different from the second material and the third material.
Optical sensor device and packaging method thereof
An optical sensor device and a packaging method thereof are disclosed. The optical filter structure includes a light-emitting module, a first structure, a second structure and a mask layer. The first and second structures are formed on opposing ends of light-emitting module and cover portions of light-emitting module. The light-emitting module includes a light exit region, a photosensitive member and an optical filter layer. The light exit region and photosensitive member are both located on a side of light-emitting module close to first structure, the first structure exposes light exit region and photosensitive member. The optical filter layer wraps exposed portion of photosensitive member. The mask layer is arranged on first structure and surface of light-emitting module facing first structure, and the mask layer exposes light exit region and photosensitive member, avoiding influence of external light on optical sensor device through mask layer.
Optical sensor device and packaging method thereof
An optical sensor device and a packaging method thereof are disclosed. The optical filter structure includes a light-emitting module, a first structure, a second structure and a mask layer. The first and second structures are formed on opposing ends of light-emitting module and cover portions of light-emitting module. The light-emitting module includes a light exit region, a photosensitive member and an optical filter layer. The light exit region and photosensitive member are both located on a side of light-emitting module close to first structure, the first structure exposes light exit region and photosensitive member. The optical filter layer wraps exposed portion of photosensitive member. The mask layer is arranged on first structure and surface of light-emitting module facing first structure, and the mask layer exposes light exit region and photosensitive member, avoiding influence of external light on optical sensor device through mask layer.
Electro-optical physiologic sensor
An electro-optical physiologic sensor comprises a printed circuit board (PCB) and a light emitter and a photodetector respectively mounted to the PCB. A first sensor element is disposed on the PCB and comprises a first electrode configured to contact tissue of a subject and a first light channel co-located with the first electrode, the first light channel optically coupled to the light emitter and configured to direct light into the subject's tissue. A second sensor element is disposed on the PCB and comprises a second electrode configured to contact the subject's tissue and a second light channel co-located with the second electrode, the second light channel optically coupled to the photodetector and configured to receive light from the tissue of the subject resulting from the light generated by the light emitter.