An optical data communication and power converter device includes a receiver circuit comprising an optical receiver. The optical receiver includes a photovoltaic device and a photoconductive device arranged within an area that is configured for illumination by a modulated optical signal emitted from a monochromatic light source of a transmitter circuit. The photovoltaic device is configured to generate electric current responsive to the illumination of the area by the modulated optical signal. The photoconductive device is configured to generate a data signal, distinct from the electric current, responsive to the illumination of the area by the modulated optical signal. A reverse bias voltage may be applied to the photoconductive device by the photovoltaic device, independent of an external voltage source. Related devices and methods of operation are also discussed.

The invention relates to a measuring system, comprising a substrate (10), which has a quantum dot layer (16), which is arranged on the substrate and which comprises an emission segment (30) having a first plurality of quantum dots (34), which first plurality has an average first energy gap, wherein the first plurality can emit radiation corresponding to the average first energy gap, wherein the quantum dot layer (16) comprises at least one absorption segment (32) having a second plurality of quantum dots (36) and the second plurality has an average second energy gap that is less than the average first energy gap so that radiation (60) emitted by the emission segment (30) can be absorbed by the at least one absorption segment (32).

After sequentially forming a first multilayer structure comprising a first set of semiconductor layers suitable for formation of a photodetector, an etch stop layer and a second multilayer structure comprising a second set of semiconductor layers suitable for formation of a light source over a substrate, the second multilayer structure is patterned to form a light source in a first region of the substrate. A first trench is then formed extending through the etch stop layer and the first multilayer structure to separate the first multilayer structure into a first part located underneath the light source and a second part that defines a photodetector located in a second region of the substrate. Next, an interlevel dielectric (ILD) layer is formed over the light source, the photodetector and the substrate. A second trench that defines a microfluidic channel is formed within the ILD layer and above the photodetector.

An optical sensor includes: a driving circuit that turns off a light-emitting element during a first period, a second period, and a fourth period and that turns on the light-emitting element during a third period; an integrating circuit that outputs a first integrated-value difference (FID) and a second integrated-value difference (SID), the FID being a difference between an integrated value of a photocurrent generated by a light-receiving element in accordance with respective states of the light-emitting element during the first period and the second period, the SID being a difference between an integrated value of a photocurrent generated in accordance with respective state of the light-emitting element during the third period and the fourth period; and an output control circuit that outputs the SID when the FID is zero and that outputs a difference between the SID and the FID when the FID is not zero.

An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.

According to one embodiment, a sensor includes a first light-emitting region, a second light-emitting region, and a light receiving element. At least one of at least a portion of a first light or at least a portion of a second light is incident on the light receiving element. The first light is emitted from the first light-emitting region. The second light is emitted from the second light-emitting region. A second position of the second light-emitting region in a first direction is between a first position of the first light-emitting region in the first direction and a light receiving position of the light receiving element in the first direction. The first direction is from the first light-emitting region toward the second light-emitting region.

An optical coupling device includes a light-emitting element, a light-receiving element that faces the light-emitting element, a lead frame that has a first surface on which the light-emitting element is provided and a second surface facing the first surface, a first covering material that covers the light-emitting element, a second covering material that covers the first covering material, the light-receiving element, and the lead frame, and a third covering material that covers the second covering material. At least one of first bonding strength between the second covering material and the third covering material and second bonding strength between the second covering material and the second surface is lower than third bonding strength between the first covering material and the second covering material.

An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.

An optical sensor module is disclosed. The optical sensor module can include a housing comprising an air cavity. An optical emitter die can be disposed in the air cavity of the housing. A top surface of the optical emitter die can face a first side of the housing, the optical emitter die configured to emit light towards the first side of the housing. An optical sensor die can be disposed in the air cavity of the housing adjacent the optical emitter die. The optical sensor die can be spaced from the optical emitter die by a lateral distance. A top surface of the optical sensor die can face the first side of the housing. There may be no septum between the optical sensor die and the optical emitter die that optically separates the optical sensor die and the optical emitter die.

A light-emitting device includes a light-emitting assembly and a light-transmissive component. The light-emitting assembly includes a first bracket, a light-emitting element, and a first photosensitive element. The first bracket has a first surface and a second surface opposite to each other. Multiple first electrodes and multiple second electrodes are disposed at intervals on the first surface, and the light-emitting element and the first photosensitive element are disposed at intervals on the second surface. The light-emitting element is electrically connected to at least one of the multiple first electrodes. The first photosensitive element is electrically connected to at least one of the multiple second electrodes. The light-transmissive component includes a light-transmissive encapsulation layer and a light-concentrating portion which are sequentially disposed on a side of the light-emitting assembly facing away from the first surface, and the light-concentrating portion is disposed in correspondence with the light-emitting element.