Disclosed are a light emitting diode unit for harvesting energy and a display module. The light emitting diode unit comprises: a substrate; a light emitting diode arranged on the substrate; and an energy harvesting member comprising a semiconductor layer surrounding the light emitting diode and configured to absorb light energy emitted by the light emitting diode, to generate electric energy, wherein an inner surface of the energy harvesting member is spaced apart from the light emitting diode.

A monolithic optoelectronic integrated circuit is provided, including: a substrate including photonic integrated device region and a peripheral circuit region; a first GaN-based multi-quantum well optoelectronic PN-junction device including a first P-type ohmic contact electrode and a first N-type ohmic contact electrode; and a first GaN-based field-effect transistor, where the first GaN-based field-effect transistor includes a first gate dielectric layer disposed on the surface of the substrate and having a first recess, a first gate filled within the first recess, and a first source and a first drain that are disposed the opposite sides of the first gate, where the first source is electrically connected to the first P-type ohmic contact electrode, the first drain is configured to be electrically connected to a first potential.

A monolithic optoelectronic integrated circuit is provided, including: a substrate including photonic integrated device region and a peripheral circuit region; a first GaN-based multi-quantum well optoelectronic PN-junction device including a first P-type ohmic contact electrode and a first N-type ohmic contact electrode; and a first GaN-based field-effect transistor, where the first GaN-based field-effect transistor includes a first gate dielectric layer disposed on the surface of the substrate and having a first recess, a first gate filled within the first recess, and a first source and a first drain that are disposed the opposite sides of the first gate, where the first source is electrically connected to the first P-type ohmic contact electrode, the first drain is configured to be electrically connected to a first potential.

An electronic device is provided. The electronic device includes a housing including a first surface, a second surface opposite to the first surface, and a side surface surrounding the first surface and the second surface, a substrate disposed in the housing, at least one light-emitting structure disposed on the substrate so as to be directed toward the second surface and being formed in a form of a bar, a plurality of light sources configured to emit light in different wavelength ranges and being disposed at designated intervals on the at least one light-emitting structure formed in the form of the bar, wherein the at least one light-emitting structure is electrically connected to the substrate by soldering in a state in which at least one of the at least one light-emitting structure is inclined at a particular angle.

An optical sensor arrangement comprises an optical barrier which is placed between a light-emitting device and a photodetector. Herein the light-emitting device and the photodetector are arranged on a first plane and are covered by a cover. The photodetector exhibits an active zone. The optical barrier exhibits an extent along a first principal axis, which is pointing parallel to the line connecting the centers of the light-emitting device and the photodetector. Herein the extent is greater than a dimension of the active zone. The optical barrier is designed to block light emitted by the light-emitting device that otherwise would be reflected by the cover by means of specular reflection and would reach the photodetector. The optical barrier is designed to pass light emitted by the light-emitting device and scattered on or above an outer surface of the cover.

A filter member includes a first lead terminal, an optical filter, and a first mold member, and a light incidence surface and a light emission surface of the optical filter is exposed from the first mold member. A sensor member includes an IR sensor element, a second lead terminal and a second mold member. A light-receiving surface of the IR sensor element is exposed from the second mole member. The filter member is disposed on the sensor member so that the light emission surface of the optical filter faces the light-receiving surface of the IR sensor element in the sensor member.

A display panel and a method of manufacturing the same, a display device and a wearable intelligent device are disclosed. The display panel includes: a substrate; a display unit arranged on the substrate; a monitoring light emitting unit formed on a side of the substrate away from the display unit, for emitting monitoring light toward an object in a direction facing away from the display unit; and a light receiving unit formed on the side of the substrate away from the display unit, for receiving reflected monitoring light from the object and generating monitoring data of the object based to the reflected monitoring light. With technique solutions of the invention, devices for monitoring a user's body conditions can be integrated on the back of the substrate, that is, be integrated with the substrate, such that the display panel has a more compact structure and a more aesthetic appearance.

This present invention provides a novel sensing chip package and a manufacturing method thereof, and in particular provides a proximity sensing chip package and a manufacturing thereof, which is characterized by forming a light blocking layer surrounding the light emitting device of the sensor to block the lateral light emitted by the light emitting device to reduce the interference of the lateral light and enhance the sensitivity of the light sensing device.

Optoelectronic devices (e.g., optical proximity sensors), methods for fabricating optoelectronic devices, and systems including optoelectronic devices, are described herein. An optoelectronic device includes a light detector die that includes a light detector sensor area. A light source die is attached to a portion of the light detector die that does not include the light detector sensor area. An opaque barrier is formed between the light detector sensor area and the light source die, and a light transmissive material encapsulates the light detector sensor area and the light source die. Rather than requiring a separate base substrate (e.g., a PCB substrate) to which are connected a light source die and a light detector die, the light source die is connected to the light detector die, such that the light detector die acts as the base for the finished optoelectronic device. This provides for cost reductions and reduces the total package footprint.

Optoelectronic devices (e.g., optical proximity sensors), methods for fabricating optoelectronic devices, and systems including optoelectronic devices, are described herein. An optoelectronic device includes a light detector die that includes a light detector sensor area. A light source die is attached to a portion of the light detector die that does not include the light detector sensor area. An opaque barrier is formed between the light detector sensor area and the light source die, and a light transmissive material encapsulates the light detector sensor area and the light source die. Rather than requiring a separate base substrate (e.g., a PCB substrate) to which are connected a light source die and a light detector die, the light source die is connected to the light detector die, such that the light detector die acts as the base for the finished optoelectronic device. This provides for cost reductions and reduces the total package footprint.