A detection device includes a substrate, a light-emitter, and a light receiver. The substrate includes a first surface area and a second surface area, in which the first surface area has a first reflectance greater than a second reflectance of the second surface area. The light emitter is disposed on the first surface area, and the light receiver is disposed on the second surface area. The light receiver has a third reflectance which is substantially the same as the second reflectance of the second surface area.

A semiconductor relay includes at least a housing, a first input terminal, a second input terminal, a first output terminal, a second output terminal, a light emitting element, a light receiving element, a first MOSFET, and a second MOSFET. The light emitting element is disposed on a first principal surface of a first base, and a light receiving drive element is disposed on a second principal surface of a second base. A source electrode of the light receiving drive element and the second base are connected to each other with the same potential. The second base is disposed between the first MOSFET and the second MOSFET as viewed along a first axis. The normal to the first principal surface of the first base crosses the normal to the second principal surface of the second base.

A semiconductor relay includes at least a housing, a first input terminal, a second input terminal, a first output terminal, a second output terminal, a light emitting element, a light receiving element, a first MOSFET, and a second MOSFET. The light emitting element is disposed on a first principal surface of a first base, and a light receiving drive element is disposed on a second principal surface of a second base. A source electrode of the light receiving drive element and the second base are connected to each other with the same potential. The second base is disposed between the first MOSFET and the second MOSFET as viewed along a first axis. The normal to the first principal surface of the first base crosses the normal to the second principal surface of the second base.

An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

A multi-level semiconductor device, the device comprising: a first level comprising integrated circuits; a second level comprising at least one electromagnetic wave receiver, wherein said second level is disposed above said first level, wherein said integrated circuits comprise single crystal transistors; and an oxide layer disposed between said first level and said second level, wherein said device comprises at least one read out circuit, wherein said second level is bonded to said oxide layer, and wherein said bonded comprises oxide to oxide bonds.

An optoelectronic device is specified including an emitter arranged to emit electromagnetic radiation and configured to be operated with an input voltage, a receiver arranged to receive the electromagnetic radiation and configured to provide at least part of an output voltage, wherein the emitter and the receiver are grown laterally adjacent to each other.

A time of flight system may include one or more microLEDs and a photodetector monolithically integrated with integrated circuitry of the time of flight system. The microLEDs may be doped to provide increased speed of operation.

Device (1) for characterizing a substance (2) capable of emitting a photoluminescence radiation (Rp) in a first spectral range, the device (1) comprising: an electroluminescent component (3), at least semi-transparent in the first spectral range, and comprising first and second opposite surfaces (30, 31), the electroluminescent component (3) being suitable for emitting an excitation radiation (Re.sub.1) outgoing from the first surface (30), emitted in a first spectral range according to a circular polarization state; the excitation radiation (Re.sub.1) outgoing from the first surface (30) being able to pass through the electroluminescent component (3), after being reflected, and exit from the second surface (31); a polarization filter (4), arranged to filter the excitation radiation (Re.sub.2) outgoing from the second surface (31), and suitable for modifying the circular polarization state so as to obtain an extinguishing of the excitation radiation (Re.sub.2) outgoing from the second surface (31) of the electroluminescent component (3); a detector (5), arranged to detect the photoluminescence radiation (Rp) outgoing from the polarization filter (4).

Device (1) for characterizing a substance (2) capable of emitting a photoluminescence radiation (Rp) in a first spectral range, the device (1) comprising: an electroluminescent component (3), at least semi-transparent in the first spectral range, and comprising first and second opposite surfaces (30, 31), the electroluminescent component (3) being suitable for emitting an excitation radiation (Re.sub.1) outgoing from the first surface (30), emitted in a first spectral range according to a circular polarization state; the excitation radiation (Re.sub.1) outgoing from the first surface (30) being able to pass through the electroluminescent component (3), after being reflected, and exit from the second surface (31); a polarization filter (4), arranged to filter the excitation radiation (Re.sub.2) outgoing from the second surface (31), and suitable for modifying the circular polarization state so as to obtain an extinguishing of the excitation radiation (Re.sub.2) outgoing from the second surface (31) of the electroluminescent component (3); a detector (5), arranged to detect the photoluminescence radiation (Rp) outgoing from the polarization filter (4).

An energy storage device comprising one or more solid state dielectric layers for use as a high-density electrical energy storage device.