A light emitting diode (LED) includes a p-type ohmic contact and a p-type substrate in contact with the p-type ohmic contact. A p-type confinement layer is provided on the p-type substrate. An emission layer is provided on the p-type confinement layer. An n-type confinement layer is provided on the emission layer. A transparent II-VI n-type contact layer is formed on the n-type confinement layer as a replacement for a current spreading layer, a III-V contact layer and an n-type ohmic contact.

The invention relates to an optoelectronic device and to the method for manufacturing same. The optoelectronic device (45), according to the invention includes, in particular: a semiconductor substrate (46) doped with a first type of conductivity; semiconductor contact pads (18) or a semiconductor layer on a surface (16) of the substrate which are/is respectively doped with a second type of conductivity that is the opposite of the first type; and semiconductor elements (24), each semiconductor element being in contact with a contact pad or with the layer.

A light-emitting device includes a semiconductor epitaxial unit having a first surface and a second surface that are opposite to each other, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are disposed sequentially in such order in a direction from the first surface to the second surface. The active layer includes a quantum well structure that has n periodic units, each of which includes a well layer and a barrier layer that are sequentially disposed. The second semiconductor layer includes a cladding layer and a current spreading layer. A ratio of a thickness of the current spreading layer to a current density of the light-emitting device ranges from 0.6 to 4. A light-emitting apparatus is also provided in the disclosure.

A light-emitting diode includes a semiconductor epitaxial structure which includes a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in sequence. The second semiconductor layer includes a current spreading layer, which includes a first doped layer doped with a first p-type impurity, a second doped layer doped with the first p-type impurity and a second p-type impurity, and a third doped layer doped with the second p-type impurity. A concentration of the first p-type impurity in the first doped layer is less than or equal to a concentration of the first p-type impurity in the second doped layer. A concentration of the second p-type impurity in the third doped layer is greater than a concentration of the second p-type impurity in the second doped layer. A light-emitting device including the aforesaid light-emitting diode is also provided.

Provided is a display device including a CMOS wafer and a light emitting diode disposed on a first area of the CMOS wafer. The light emitting diode includes a first electrode member, an emission layer disposed on the first electrode member, and a second electrode member disposed on a semiconductor junction member. The first electrode member includes a metal layer, a reflective layer disposed on the metal layer, and a first transparent conductive layer disposed on the reflective layer.

A light-emitting diode device including a substrate, a structural layer, and a light-emitting diode mesa is provided. The substrate has a first surface and a second surface arranged opposite each other. The first surface includes a first region and a second region, and the second region surrounds the first region. The structural layer covers the first region and the second region and at least includes an electrode layer, a second insulating layer, and a first insulating layer stacked in sequence from the first surface. The light-emitting diode mesa is arranged above the first region of the structural layer and includes a semiconductor epitaxial layer. The semiconductor epitaxial layer includes a second semiconductor layer, an active layer, and a first semiconductor layer stacked in sequence from the first surface.

A light-emitting diode includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor layer, a second semiconductor layer and an active layer, and further includes a first mesa and a second mesa. The first mesa has a current blocking structure adjacent to the second mesa and a current conduction portion located below the current blocking structure. The first semiconductor has a first surface facing away from the active layer, the first mesa is provided with a second surface facing away from the first surface, a distance between the second surface and the first surface is greater than or equal to a half of a thickness of the first semiconductor layer, and the current conduction portion has a height in a thickness direction of the semiconductor layer sequence being to of the thickness of the first semiconductor layer. The light-emitting diode can improve carrier injection efficiency.

An ultraviolet LED device and a manufacturing method therefor is provided according to an embodiment of the disclosure. The ultraviolet LED device includes: a substrate (1), an AlN buffer layer (2), an n-AlGaN layer (3), a quantum well region (4), an electron blocking layer (5), a p-type GaN layer (6), and an etched trench region (7). The AlN buffer layer (2) is disposed on the substrate (1). The n-AlGaN layer (3) is disposed on the AlN buffer layer (2). The quantum well region (4) is disposed on the n-AlGaN layer (3). The electron blocking layer (5) is disposed on the quantum well region (4). The p-type GaN layer (6) is disposed on the electron blocking layer (5). The etched trench region (7) is etched downwards from the p-type GaN layer (6). The etched trench region (7) is obtained by etching from the p-type GaN layer (6) along a direction pointing toward the substrate (1). An etching angle of the etched trench region (7) is greater than 0 degree and less than or equal to 90 degrees.

A light emitting diode including a substrate having a first area and a second area defined by an isolation groove line, a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer, an active layer, a first electrode pad electrically connected to the lower semiconductor layer, a second electrode pad electrically connected to the upper semiconductor layer, and a connecting portion electrically connecting the semiconductor stack disposed in the first and second areas to each other, and including a first portion, a second portion, and a third portion extending from a second distal end of the first portion, in which the isolation groove line is disposed between the first and second electrode pads and exposes the substrate, the first portion extends along a first direction substantially parallel to an extending direction of the isolation groove line, and the second and third portions extend in a second direction crossing the first direction.

The semiconductor light-emitting device includes a base layer including an n-type semiconductor layer, a tunnel junction part on the n-type semiconductor layer, and a p-type semiconductor layer on the tunnel junction part, a plurality of columnar semiconductors on the base layer, a buried layer filling in a space between each of the plurality of columnar semiconductors, and a current suppression region suppressing a current, where each of the plurality of columnar semiconductors has a hexagonal column, and an active layer covering the hexagonal column, where the hexagonal column has a hexagonal first surface and a second surface opposite to the first surface, where the first surface faces the base layer, where the second surface faces the current suppression region, where the buried layer is an n-type semiconductor, and where the hexagonal column is a p-type semiconductor.