Devices, systems, and methods for providing wireless personal area networks (PANs) and local area networks (LANs) using visible and near-visible optical spectrum. Various constructions and material selections are provided herein. According to one embodiment, a free space optical (FSO) communication apparatus includes a digital data port, an array of light-emitting diodes (LEDs) each configured to have a transient response time of less than 500 picoseconds (ps), and current drive circuitry coupled between the digital data port and the array of LEDs.

Devices, systems, and methods for providing wireless personal area networks (PANs) and local area networks (LANs) using visible and near-visible optical spectrum. Various constructions and material selections are provided herein. According to one embodiment, a free space optical (FSO) communication apparatus includes a digital data port, an array of light-emitting diodes (LEDs) each configured to have a transient response time of less than 500 picoseconds (ps), and current drive circuitry coupled between the digital data port and the array of LEDs.

An optoelectronic device including at least first and second light-emitting diodes, each including a first P-type doped semiconductor portion and a second N-type doped semiconductor portion, an active area including multiple quantum wells between the first and second semiconductor portions, a conductive layer covering the lateral walls of the active area and of at least a portion of the first semiconductor portion, and an insulating layer interposed between the lateral walls of the active area and of at least a portion of the conductive layer. The device includes means for controlling the conductive layer of the first light-emitting diode independently from the conductive layer of the second light-emitting diode.

A light-emitting element includes: a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a fourth semiconductor layer in this order. The first semiconductor layer is Al.sub.x1In.sub.y1Ga.sub.1-x1-y1N (0x11, 0y11, 0x1+y11), the second semiconductor layer is Al.sub.x2In.sub.y2Ga.sub.1-x2-y2N (0x21, 0y21, 0x2+y21), the third semiconductor layer is Al.sub.x3In.sub.y3Ga.sub.1-x3-y3N (0x31, 0y31, 0x3+y31), and the fourth semiconductor layer is Al.sub.x4In.sub.y4Ga.sub.1-x4-y4N (0x41, 0y41, 0x4+y41).

The present disclosure provides quantum dot patterned film and preparation method thereof, electron transport layer, and quantum dot electroluminescent device. The preparation method includes: S1, attaching a quantum dot precursor solution to a functional transport layer substrate to obtain a wet film having a quantum dot layer; S2, attaching a photosensitive ligand to a patterned surface of a prefabricated nano stamp to obtain a photosensitive ligand stamp having a ligand layer; S3, contacting the quantum dot layer of the wet film with the ligand layer of the photosensitive ligand stamp, performing imprinting treatment, so as to obtain a ligand exchange quantum dot film; and S4, performing on the ligand exchange quantum dot film to obtain the quantum dot patterned film. The preparation method solves the problems in the related art that the preparation process of the quantum dot patterned film is complex and the production yield is relatively low.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

A micro LED element includes a mesa including a first semiconductor layer, an intermediate layer, and a second semiconductor layer stacked from top down, wherein the mesa is divided into two stages at a side of the intermediate layer, and the intermediate layer includes: a light emitting layer; and a third semiconductor layer disposed on a surface of the light emitting layer, wherein the third semiconductor layer is exposed to the outside of the mesa to have an exposed surface relative to the mesa; and a Schottky metal layer disposed on the exposed surface, wherein the Schottky metal layer creates a depletion region in the light emitting layer.

A deep ultraviolet light-emitting element includes an n-type semiconductor layer, a light-emitting layer, a p-type electron blocking layer, and a p-type contact layer, in order, on a substrate. The p-type contact layer has a superlattice structure in which a first layer formed of Al.sub.xGa.sub.1-xN and a second layer formed of Al.sub.yGa.sub.1-yN are stacked alternately. The Al composition ratio y of the second layer is 0.15 or higher. The deep ultraviolet light-emitting element includes a reflective electrode consisting of Ni and Rh directly on an outermost second layer. A guide layer having an Al composition ratio larger than those of a barrier layer of the light-emitting layer and the p-type electron blocking layer is included between the p-type electron blocking layer and a well layer closest to the p-type electron blocking layer in the light-emitting layer. A volume ratio of Rh in the reflective electrode is 75% or higher.

In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence including a first semiconductor region of a first conductivity type, an active zone having a multiple quantum well structure composed of a plurality of quantum well layers and barrier layers, a second semiconductor region of a second conductivity type and a plurality of channels extending through the active zone, wherein the second semiconductor region is located in the channels and is configured for lateral current injection into the active zone, wherein the channels have a first aperture half-angle in the first semiconductor region and a second aperture half-angle in the active zone, and wherein the second aperture half-angle is greater than zero and less than the first aperture half-angle.