Provided is a display substrate, including an array substrate, a connection layer, and a light-emitting functional layer, wherein the connection layer is disposed between the array substrate and the light-emitting functional layer; and the connection layer is provided with a plurality of via holes, and the light-emitting functional layer comprises a plurality of light-emitting units, wherein each of the light-emitting units is electrically connected with a conductive structure in at least one via hole, and an orthographic projection of the via hole on a carrying surface of the connection layer is disposed outside an orthographic projection of a light-emitting region of a corresponding light-emitting unit on the carrying surface.

Provided is a display substrate, including an array substrate, a connection layer, and a light-emitting functional layer, wherein the connection layer is disposed between the array substrate and the light-emitting functional layer; and the connection layer is provided with a plurality of via holes, and the light-emitting functional layer comprises a plurality of light-emitting units, wherein each of the light-emitting units is electrically connected with a conductive structure in at least one via hole, and an orthographic projection of the via hole on a carrying surface of the connection layer is disposed outside an orthographic projection of a light-emitting region of a corresponding light-emitting unit on the carrying surface.

A display device can include a substrate including a plurality of first sub-pixels, a plurality of second sub-pixels, a plurality of third sub-pixels; a plurality of first semiconductor light emitting devices disposed in the plurality of first sub-pixels, and configured to generate first color light of a first main wave; a plurality of second semiconductor light emitting devices disposed in the plurality of second sub-pixels, and configured to generate second color light of a second main wave; and a plurality of third semiconductor light emitting devices disposed in the plurality of third sub-pixels, and configured to generate third color light of a third main wave, in which at least some of the plurality of first semiconductor light emitting devices have different light emitting regions to compensate for a wave deviation of the first main wave.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

A semiconductor light-emitting element includes: an n-type clad layer of an n-type AlGaN-based semiconductor material; an active layer including a planarizing layer of an AlGaN-based semiconductor material provided on the n-type clad layer, a barrier layer of an AlGaN-based semiconductor material provided on the planarizing layer, and a well layer of an AlGaN-based semiconductor material provided on the barrier layer; and a p-type semiconductor layer provided on the active layer. The active layer emits deep ultraviolet light having a wavelength of 360 nm or shorter, and a ground level of a conduction band of the planarizing layer is lower than a ground level of a conduction band of the barrier layer and higher than a ground level of a conduction band of the well layer.

A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.

A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.

A light-emitting device including nanoholes may include a first conductive semiconductor layer, an active layer formed on the first conductive semiconductor layer, a second conductive semiconductor layer formed on the active layer, and nanoholes coated with nanoparticles that cause surface plasmon resonance. The nanoholes may be formed to penetrate the second conductive semiconductor layer and the active layer. Since areas adjacent to the active layer are semi-permanently coated with nanoparticles through nanoholes, the surface plasmon resonance effect may be maximized in the light-emitting device.

A light-emitting device including nanoholes may include a first conductive semiconductor layer, an active layer formed on the first conductive semiconductor layer, a second conductive semiconductor layer formed on the active layer, and nanoholes coated with nanoparticles that cause surface plasmon resonance. The nanoholes may be formed to penetrate the second conductive semiconductor layer and the active layer. Since areas adjacent to the active layer are semi-permanently coated with nanoparticles through nanoholes, the surface plasmon resonance effect may be maximized in the light-emitting device.

A light-emitting diode epitaxial structure and a light-emitting diode are provided. The light-emitting diode epitaxial structure is provided with an Mg modulation layer disposed between a multi-quantum well light-emitting layer and a first hole injection layer. The average impurity doping concentration of the Mg modulation layer is A, the average impurity doping concentration of the first hole injection layer is B, and the average impurity doping concentration of an electron blocking layer is C, where B>A>C.