A display device comprises a first electrode and a second electrode on a substrate, a first insulating layer on the first electrode and the second electrode, light emitting elements on the first insulating layer each having a first end on the first electrode and a second end on the second electrode, a first connection electrode disposed on the first electrode and electrically contacting the first end of each of the light emitting elements, a second connection electrode disposed on the second electrode and electrically contacting the second end of each of the light emitting elements, a second insulating layer on the light emitting elements, the first connection electrode and the second connection electrode, and a third connection electrode disposed on the second insulating layer and electrically contacting the light emitting elements through an opening formed in the second insulating layer that partially exposes the light emitting elements.

A display device comprises a first electrode and a second electrode on a substrate, a first insulating layer on the first electrode and the second electrode, light emitting elements on the first insulating layer each having a first end on the first electrode and a second end on the second electrode, a first connection electrode disposed on the first electrode and electrically contacting the first end of each of the light emitting elements, a second connection electrode disposed on the second electrode and electrically contacting the second end of each of the light emitting elements, a second insulating layer on the light emitting elements, the first connection electrode and the second connection electrode, and a third connection electrode disposed on the second insulating layer and electrically contacting the light emitting elements through an opening formed in the second insulating layer that partially exposes the light emitting elements.

Semiconductor structures and methods for forming those semiconductor structures are disclosed. A semiconductor structure can include a growth axis, a first layer consisting of a single layer, and a second layer. The single layer can include: a first semiconductor with a polar crystal structure; and a monotonic change in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis. The monotonic change in composition can induce p-type or n-type conductivity in the first layer. The second layer can include a second semiconductor with the polar crystal structure. There is no abrupt change in polarization at an interface between the first layer and the second layer, and the monotonic change in composition is the only monotonic change in composition in the semiconductor structure.

Semiconductor structures and methods for forming those semiconductor structures are disclosed. A semiconductor structure can include a growth axis, a first layer consisting of a single layer, and a second layer. The single layer can include: a first semiconductor with a polar crystal structure; and a monotonic change in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis. The monotonic change in composition can induce p-type or n-type conductivity in the first layer. The second layer can include a second semiconductor with the polar crystal structure. There is no abrupt change in polarization at an interface between the first layer and the second layer, and the monotonic change in composition is the only monotonic change in composition in the semiconductor structure.

A red light emitting apparatus includes a first conductivity type semiconductor layer; an active region including a barrier layer and a well layer; a strain-control layer disposed between the first conductivity type semiconductor layer and the active region; a superlattice layer disposed between the strain-control layer and the active region; a second conductivity type semiconductor layer disposed on the active region; and an electron-blocking layer disposed between the active region and the second conductivity type semiconductor layer, in which the first conductivity type semiconductor layer and the well layer are expressed by a given formula, and an index value representing a band gap of the well layer and an index value representing a band gap of the first conductivity type semiconductor layer a given equation.

A light-emitting device includes a substrate, first and second mesa structures, at least one current blocking element, and at least one conductive bridging element. Each of the first and second mesa structures includes a first type semiconductor layer disposed on the substrate, an active layer disposed on the first type semiconductor layer, and a second type semiconductor layer disposed on the active layer. The at least one current blocking element covers the first mesa structure and a portion of a groove located between the first mesa structure and the second mesa structure. The at least one conductive bridging element is disposed on the at least one current blocking element, and includes a first end portion electrically connected to the second type semiconductor layer of the first mesa structure, and a second end portion electrically connected to the first type semiconductor layer of the second mesa structure.

A light-emitting diode includes an epitaxial structure, a first metal electrode, a second metal electrode, an insulating stack layer, a metal reflective layer, a first connection electrode, and a second connection electrode. The epitaxial structure includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially arranged in that order along a direction from the lower surface to the upper surface. The first and second metal electrodes are located on the upper surface of the epitaxial structure. The insulating stack layer covers portions of the epitaxial structure and the contact electrode, and includes a first insulating layer and a second insulating layer located on the first insulating layer. The metal reflective layer is sandwiched between the first and second insulating layers. The first and second connection electrodes are located above the insulating stack layer and are connected to the first and second metal electrodes, respectively.

Disclosed are a semiconductor epitaxial structure, a preparation method thereof, and a light-emitting diode. The semiconductor epitaxial structure includes a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer that are sequentially arranged on a substrate. The material of the buffer layer is Al.sub.xIn.sub.yGa.sub.(1-x-y)N, wherein 0x and 0y. The buffer layer is doped with carbon impurities. The doping concentration of the carbon impurities in the buffer layer is lower than 9E17 atoms/cm.sup.3. The present invention grows the buffer layer using a high-temperature growth method. The buffer layer has a lower defect density and a lower content of carbon impurities, making it more possible to facilitate enhancement of the lattice quality of the subsequent epitaxial structure and improve the luminous efficiency and anti-aging capability of the light-emitting diode.

A display device is provided. The display device includes a substrate having a pixel electrode, a light emitting element on the pixel electrode, and a connection electrode layer including a plurality of connection electrodes between the pixel electrode and the light emitting element, the plurality of connection electrodes being spaced from each other.

A display device is provided. The display device includes a substrate having a pixel electrode, a light emitting element on the pixel electrode, and a connection electrode layer including a plurality of connection electrodes between the pixel electrode and the light emitting element, the plurality of connection electrodes being spaced from each other.