A semiconductor structure includes a substrate, a first type semiconductor layer, a light-emitting stack layer, and a second type semiconductor layer. The first type semiconductor layer is disposed on the substrate. The light-emitting stack layer includes a plurality of light-emitting layers stacked on the first type semiconductor layer. The plurality of light-emitting layers are configured to emit different colors of light, and wavelengths of the different colors of light fall within a range of 200 nm to 2000 nm. The second type semiconductor layer is disposed on the light-emitting stack layer.

A red-light emitting diode, LED, includes an active layer configured to generate red light, the active layer having first and second faces that are opposite to each other, a first barrier layer located on the first face of the active layer, a second barrier layer located on the second face of the active layer, a hole blocking layer located on the first barrier layer, opposite to the active layer, the hole blocking layer being configured to prevent holes to escape from the active layer, a first electrode located on the second barrier layer, and a second electrode located on the hole blocking layer. A bandgap of the hole blocking layer is larger than a bandgap of the first barrier layer.

A light emitting device according to an embodiment of the present disclosure includes: a first electrically-conductive layer (10) that is of a first electrically-conductive type; a first high resistance part (51) that is provided in the first electrically-conductive layer (10) and that includes first atoms; a second electrically-conductive layer (20) that is of a second electrically-conductive type; a second high resistance part (52) that is provided in the second electrically-conductive layer (20) and that includes second atoms; and an active layer (30) that is provided between the first electrically-conductive layer (10) and the second electrically-conductive layer (20). A concentration of the first atoms inside the first high resistance part (51) is greater than a concentration of the first atoms in a first surface (11S1) of the first electrically-conductive layer (10).

A light emitting device according to an embodiment of the present disclosure includes: a first electrically-conductive layer (10) that is of a first electrically-conductive type; a first high resistance part (51) that is provided in the first electrically-conductive layer (10) and that includes first atoms; a second electrically-conductive layer (20) that is of a second electrically-conductive type; a second high resistance part (52) that is provided in the second electrically-conductive layer (20) and that includes second atoms; and an active layer (30) that is provided between the first electrically-conductive layer (10) and the second electrically-conductive layer (20). A concentration of the first atoms inside the first high resistance part (51) is greater than a concentration of the first atoms in a first surface (11S1) of the first electrically-conductive layer (10).

A nitride semiconductor light-emitting element includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer, and an electron blocking layer comprising Al and being provided between the active layer and the p-type semiconductor layer. The electron blocking layer partially includes a high Al composition portion in at least one cross section orthogonal to a stacking direction, the high Al composition portion having an Al composition ratio higher than a surrounding portion.

A radiation emitting semiconductor chip may be configured to emit electromagnetic radiation from a radiation exit surface during operation. The chip may include a carrier on which a first epitaxial semiconductor layer sequence of a first conductivity type and a second epitaxial semiconductor layer sequence of a second conductivity type different from the first conductivity type are arranged, a first current spreading layer arranged between the first semiconductor layer sequence and the carrier, a second current spreading layer arranged between the first current spreading layer and the carrier, a dielectric layer arranged in regions between the first current spreading layer and the second current spreading layer, a reflective layer arranged between the second current spreading layer and the carrier, and an electrically insulating layer arranged in regions between the second current spreading layer and the reflective layer.

A radiation emitting semiconductor chip may be configured to emit electromagnetic radiation from a radiation exit surface during operation. The chip may include a carrier on which a first epitaxial semiconductor layer sequence of a first conductivity type and a second epitaxial semiconductor layer sequence of a second conductivity type different from the first conductivity type are arranged, a first current spreading layer arranged between the first semiconductor layer sequence and the carrier, a second current spreading layer arranged between the first current spreading layer and the carrier, a dielectric layer arranged in regions between the first current spreading layer and the second current spreading layer, a reflective layer arranged between the second current spreading layer and the carrier, and an electrically insulating layer arranged in regions between the second current spreading layer and the reflective layer.

A display device is provided. The display device comprises a plurality of pixel electrodes on a first substrate and spaced apart from each other; a plurality of light emitting elements on the plurality of pixel electrodes; and a common electrode layer on the plurality of light emitting elements, wherein the common electrode layer includes a first common electrode layer on the plurality of light emitting elements, and a second common electrode layer between the first common electrode layer and the plurality of light emitting elements, and a lattice constant of the first common electrode layer is larger than a lattice constant of the second common electrode layer.

An optoelectronic component may include a support and multiple optoelectronic semiconductor chips that can be actuated individually and independently of one another. Each semiconductor chip may include a semiconductor layer sequence. Each semiconductor chip may have an electrically insulating passivation layer on the respective lateral surface of the semiconductor layer sequence. The semiconductor chip(s) are assigned to a first group, which may be paired with a common boundary field generating device arranged on the passivation layer face facing away from the semiconductor layer sequence at an active zone for each semiconductor chip of the first group. The boundary field generating device is designed to at least temporarily generate an electric field in the boundary regions of the active zone so that a flow of current through the semiconductor layer sequences can be controlled in the boundary regions during the operation of the semiconductor chips of the first group.

An optoelectronic component may include a support and multiple optoelectronic semiconductor chips that can be actuated individually and independently of one another. Each semiconductor chip may include a semiconductor layer sequence. Each semiconductor chip may have an electrically insulating passivation layer on the respective lateral surface of the semiconductor layer sequence. The semiconductor chip(s) are assigned to a first group, which may be paired with a common boundary field generating device arranged on the passivation layer face facing away from the semiconductor layer sequence at an active zone for each semiconductor chip of the first group. The boundary field generating device is designed to at least temporarily generate an electric field in the boundary regions of the active zone so that a flow of current through the semiconductor layer sequences can be controlled in the boundary regions during the operation of the semiconductor chips of the first group.