The present disclosure relates to a semiconductor device, a method of manufacturing the same, and an electronic apparatus capable of providing a heat dissipation structure suitable for a CSP. The semiconductor device includes a heat dissipation unit that penetrates a semiconductor layer and an insulating film formed on a first surface side of the semiconductor layer and protrudes from the insulating film to be exposed. The present disclosure can be applied to, for example, a semiconductor package in which a CMOS image sensor is packaged in a chip size, or the like.

The present disclosure relates to a semiconductor device, a method of manufacturing the same, and an electronic apparatus capable of providing a heat dissipation structure suitable for a CSP. The semiconductor device includes a heat dissipation unit that penetrates a semiconductor layer and an insulating film formed on a first surface side of the semiconductor layer and protrudes from the insulating film to be exposed. The present disclosure can be applied to, for example, a semiconductor package in which a CMOS image sensor is packaged in a chip size, or the like.

An object is to provide an infrared sensor with a quantum dot optimized. The present invention provides an infrared sensor (1) including a light absorption layer (5) that absorbs an infrared ray, wherein the light absorption layer includes a plurality of spherical quantum dots (21). Alternatively, the present invention provides an infrared sensor including a light absorption layer that absorbs an infrared ray, wherein the light absorption layer includes a plurality of quantum dots and the quantum dot includes at least one kind of PbS, PbSe, CdHgTe, Ag.sub.2S, Ag.sub.2Se, Ag.sub.2Te, AgInSe.sub.2, AgInTe.sub.2, CuInSe.sub.2, CuInTe.sub.2, and InAs.

A solar cell module includes a first substrate, a second substrate, at least one cell unit, a first packaging film, a second packaging film, a first protective layer, a second protective layer, and a plurality of support members. The first substrate and the second substrate are disposed opposite to each other. The cell unit is disposed between the first substrate and the second substrate. The first packaging film is disposed between the cell unit and the first substrate. The second packaging film is disposed between the cell unit and the second substrate. The first protective layer is disposed between the cell unit and the first packaging film. The second protective layer is disposed between the cell unit and the second packaging film. The support members are respectively disposed between the first packaging film and the second packaging film and surround at least two opposite sides of the cell unit.

Various embodiments of a novel structure of a Ge/Si avalanche photodiode with an integrated heater, as well as a fabrication method thereof, are provided. In one aspect, a doped region is formed either on the top silicon layer or the silicon substrate layer to function as a resistor. When the environmental temperature decreases to a certain point, a temperature control loop will be automatically triggered and a proper bias is applied along the heater, thus the temperature of the junction region of a Ge/Si avalanche photodiode is kept within an optimized range to maintain high sensitivity of the avalanche photodiode and low bit-error rate level.

An image capture device includes an image sensor. The image sensor includes a temperature sensor for measuring temperature measurements of the image sensor. A timing generator is coupled to the image sensor for applying an electronic shutter pulse to the image sensor to drain away all charge in photodiodes of the image sensing region prior to image capture. A reading component is coupled to the temperature sensor for reading the temperature measurements from the temperature sensor. The image capture device is configured to prevent erroneous temperature readings by the reading component resulting from substrate punch-through from the application of the electronic shutter pulse.

The semiconductor device comprises a substrate of semiconductor material, a dielectric layer on the substrate, an electrically conductive contact pad arranged in the dielectric layer, a hot plate arranged in the dielectric layer, a recess of the substrate at the location of the hot plate, and an integrated circuit, which operates the hot plate. An electrically conductive layer is arranged on a side of the substrate opposite the dielectric layer. The substrate is provided with a via hole above the contact pad, and an electrically conductive material connecting the electrically conductive layer with the contact pad is applied in the via hole. The recess and the via hole are formed in the same process step.

A tiled array of hybrid assemblies and a method of forming such an array enables the assemblies to be placed close together. Each assembly comprises first and second dies, with the second die mounted on and interconnected with the first die. Each vertical edge of a second die which is to be located adjacent to a vertical edge of another second die in the tiled array is etched such that the etched edge is aligned with a vertical edge of the first die. Indium bumps are deposited on a baseplate where the hybrid assemblies are to be mounted, and the assemblies are mounted onto respective indium bumps using a hybridizing machine, enabling the assemblies to be placed close together, preferably 10 m. The first and second dies may be, for example. a detector and a readout IC, or an array of LEDs and a read-in IC.

A sensor device includes a first substrate of semiconductor material having opposing first and second surfaces, photodetectors configured to receive light impinging on the first surface, and first contact pads each exposed at both the first and second surfaces and electrically coupled to at least one of the photodetectors. A second substrate comprises opposing first and second surfaces, electrical circuits, a second contact pads each disposed at the first surface of the second substrate and electrically coupled to at least one of the electrical circuits, and a plurality of cooling channels formed as first trenches extending into the second surface of the second substrate but not reaching the first surface of the second substrate. The first substrate second surface is mounted to the second substrate first surface such that each of the first contact pads is electrically coupled to at least one of the second contact pads.

A sensor device includes a first substrate of semiconductor material having opposing first and second surfaces, photodetectors configured to receive light impinging on the first surface, and first contact pads each exposed at both the first and second surfaces and electrically coupled to at least one of the photodetectors. A second substrate comprises opposing first and second surfaces, electrical circuits, a second contact pads each disposed at the first surface of the second substrate and electrically coupled to at least one of the electrical circuits, and a plurality of cooling channels formed as first trenches extending into the second surface of the second substrate but not reaching the first surface of the second substrate. The first substrate second surface is mounted to the second substrate first surface such that each of the first contact pads is electrically coupled to at least one of the second contact pads.