Various embodiments of a compact sensor module are disclosed herein. The sensor module can include a stiffener and a sensor substrate wrapped around a side of the stiffener. A sensor die may mounted on the sensor substrate. A processor substrate may be coupled to the sensor substrate. A processor die may be mounted on the processor substrate and may be in electrical communication with the sensor die.

The detection device comprises a cold finger which performs the thermal connection between a detector and a cooling system. The cold finger comprises at least one side wall at least partially formed by an area made from the amorphous metal alloy. Advantageously, the whole of the cold finger is made from the amorphous metal alloy.

Wafer level solder ball bridge formation is used to provide electrical and thermal coupling between bond pads formed on substrates and bond pads formed on devices mounted on substrates. Solder balls anchored to solder-wettable bond pads enable sequential linking of laterally coupled solder balls over non-solder-wettable surface in the formation of solder ball bridge assemblies. Solder ball bridges formed between a device disposed on a substrate and a substrate enables thermal energy transfer and electrical interconnection between the device and the substrate.

Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a device containing the chip be subjected to tampering. Triggering circuits containing normally-OFF heterojunction field-effect photo-transistors are configured to cause reactions of the reactive materials within the chips upon exposure to light. The normally-OFF heterojunction field-effect photo-transistors can be fabricated during back-end-of-line processing through the use of polysilicon channel material, amorphous hydrogenated silicon gate contacts, hydrogenated crystalline silicon source/drain contacts, or other materials that allow processing at low temperatures.

A semiconductor radiation detector comprises a detector chip having a front side and a back side, and a support plate on the back side of the detector chip, having electric connections with said detector chip. A base plate has a thermoelectric cooler attached to it and contact pins protruding from the base plate towards said detector chip. A bonding plate is on an opposite side of said thermoelectric cooler than said base plate, and first wire bonded connections go between said contact pins and said bonding plate. A joint plate is between said bonding plate and said support plate, and electric connections between said support plate and said bonding plate go through said joint plate.

Disclosed is a photodetector with a resonant waveguide structure, including: a substrate; a light absorption layer located on the substrate and configured for detecting an optical signal; a resonant waveguide structure including a first waveguide portion and a second waveguide portion spaced apart; the first waveguide portion receives the optical signal and transmits the received optical signal to a first region of the second waveguide portion, the second waveguide portion includes a second region for coupling the optical signal to the light absorption layer, and the second waveguide portion provides a circular transmission path for transmission of the optical signal to transmit the optical signal that transmitted to the first region to the second region along part of the circular transmission path and retransmit the optical signal that flows through the second region without being coupled to the light absorption layer to the second region along the circular transmission path.

Disclosed is a photodetector with a resonant waveguide structure, including: a substrate; a light absorption layer located on the substrate and configured for detecting an optical signal; a resonant waveguide structure including a first waveguide portion and a second waveguide portion spaced apart; the first waveguide portion receives the optical signal and transmits the received optical signal to a first region of the second waveguide portion, the second waveguide portion includes a second region for coupling the optical signal to the light absorption layer, and the second waveguide portion provides a circular transmission path for transmission of the optical signal to transmit the optical signal that transmitted to the first region to the second region along part of the circular transmission path and retransmit the optical signal that flows through the second region without being coupled to the light absorption layer to the second region along the circular transmission path.

A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.

A stacked optoelectronic packaged device includes a plurality of stacked components within a package material having a package body providing side walls and a bottom wall for the package, and a lid which seals a top of the package. The stacked components include a first cavity die having a top surface and a bottom surface including at least one through-channel formed in the bottom surface. A bottom die has a top surface including at least one electrical trace and a light source die thereon. At least one of the through-channels of the first cavity die are aligned to the electrical trace, and the first cavity die is bonded to the bottom die with the electrical trace being within the through-channel and not contacting the first cavity die to provide a vacuum sealing structure. A photodetector (PD) is optically coupled to receive the light originating from the light source.

Interconnects for optoelectronic devices are described. For example, an interconnect for an optoelectronic device includes an interconnect body having an inner surface, an outer surface, a first end, and a second end. A plurality of bond pads is coupled to the inner surface of the interconnect body, between the first and second ends. A stress relief feature is disposed in the interconnect body. The stress relief feature includes a slot disposed entirely within the interconnect body without extending through to the inner surface, without extending through to the outer surface, without extending through to the first end, and without extending through to the second end of the interconnect body.