A composite material for fluorescent quantum dot micro-nano packaging. The composite material comprises fluorescent quantum dots, a mesoporous particle material having a nanometer lattice structure, and a barrier layer, wherein the fluorescent quantum dots are distributed in the mesoporous particle material, and the barrier layer is coated on the outer surface of the mesoporous particle material. In the composite material according to the invention, the quantum dot aggregation can be effectively retarded, with the barrier layer coated on the surface the water-oxygen micromolecule erosion is prevented, the compatibility and stability of the composite fluorescent particles is improved, and the service life of the composite material for fluorescent quantum dot micro-nano packaging is thus greatly improved.

This invention includes quantum dot channel (QDC) Si FETs, which detect infrared radiation to serve as photodetectors. GeOx-cladded Ge quantum dots form the quantum dot channel. An assembly of cladded quantum dots, such as Ge and Si, with thin barrier layers (GeOx and SiOx) form a quantum dot superlattice (QDSL). A QDSL exhibits narrow energy widths of sub-bands (or mini-energy bands) with sub-bands separation ranging 0.2-0.5 eV. The energy separation depends on the barrier thickness (0.5-1 nm) and diameter of quantum dots (3-5 nm). Drain current magnitude in a QDSL layer or quantum dot channel depends on density of electrons in the QD inversion channel, which in turn depends on number of sub-bands participating in the conduction for a given drain voltage VD and gate voltage VG. Infrared photons with energy corresponding to the intra sub-band separation are absorbed as electrons in a lower sub-band make transition to the upper sub-band.

This invention includes quantum dot channel (QDC) Si FETs, which detect infrared radiation to serve as photodetectors. GeOx-cladded Ge quantum dots form the quantum dot channel. An assembly of cladded quantum dots, such as Ge and Si, with thin barrier layers (GeOx and SiOx) form a quantum dot superlattice (QDSL). A QDSL exhibits narrow energy widths of sub-bands (or mini-energy bands) with sub-bands separation ranging 0.2-0.5 eV. The energy separation depends on the barrier thickness (0.5-1 nm) and diameter of quantum dots (3-5 nm). Drain current magnitude in a QDSL layer or quantum dot channel depends on density of electrons in the QD inversion channel, which in turn depends on number of sub-bands participating in the conduction for a given drain voltage VD and gate voltage VG. Infrared photons with energy corresponding to the intra sub-band separation are absorbed as electrons in a lower sub-band make transition to the upper sub-band.

A UVC Metal-Semiconductor-Metal photodetector with metallic contacts made of Ni and/or Au and/or Ti, characterized in that the photodetector comprises an aluminum alloy with Ga2O3, providing a broadened and/or shifted spectral response toward shorter wavelengths compared to a Ga2O3-only based detector. The invention also relates to an imaging system based on a UVC focal plane array with a network of MSM photodetectors with metallic contacts made of Ni and/or Au and/or Ti, based on (Al)Ga2O3, for remote detection/location/optical imaging of a fire, corona discharge, missile launch, ozone hole monitoring, or gas detection. The invention also relates to MSM UVC photodetectors designed on a substrate that is transparent in the UVC, allowing back-illumination to facilitate the manufacturing of flip-chip devices with higher efficiency compared to front-illuminated detectors by avoiding light reflections from the front surface metallic contacts.

A UVC Metal-Semiconductor-Metal photodetector with metallic contacts made of Ni and/or Au and/or Ti, characterized in that the photodetector comprises an aluminum alloy with Ga2O3, providing a broadened and/or shifted spectral response toward shorter wavelengths compared to a Ga2O3-only based detector. The invention also relates to an imaging system based on a UVC focal plane array with a network of MSM photodetectors with metallic contacts made of Ni and/or Au and/or Ti, based on (Al)Ga2O3, for remote detection/location/optical imaging of a fire, corona discharge, missile launch, ozone hole monitoring, or gas detection. The invention also relates to MSM UVC photodetectors designed on a substrate that is transparent in the UVC, allowing back-illumination to facilitate the manufacturing of flip-chip devices with higher efficiency compared to front-illuminated detectors by avoiding light reflections from the front surface metallic contacts.

Plasmonic substrates are provided which may be used in a variety of optoelectronic devices, e.g., biosensors and photodetectors. The plasmonic substrate may comprise a layer of graphene and a plurality of discrete, individual transition metal chalcogenide nanodomes distributed on a surface of the layer of graphene, each nanodome surrounded by bare graphene. Methods for making and using the plasmonic substrates are also provided.

Plasmonic substrates are provided which may be used in a variety of optoelectronic devices, e.g., biosensors and photodetectors. The plasmonic substrate may comprise a layer of graphene and a plurality of discrete, individual transition metal chalcogenide nanodomes distributed on a surface of the layer of graphene, each nanodome surrounded by bare graphene. Methods for making and using the plasmonic substrates are also provided.

The present disclosure relates to a method for fabricating an array of nanoprojections, where the nanoprojections may include nanopillars, nanowires, nanoneedles or nanocones. The present disclosure also relates to an array of the nanoprojections, and to uses of such arrays.

The present application discloses a solar cell, a solar cell module, and a method for manufacturing a solar cell. In one example, a solar cell includes a semiconductor substrate, an ultra-thin dielectric layer, a passivation layer, a first electrode, and metallic crystals. The semiconductor substrate has a light receiving surface and a back surface opposite to the light receiving surface. The ultra-thin dielectric layer is formed on at least one of the back surface and the light receiving surface of the semiconductor substrate. The passivation layer is formed on the ultra-thin dielectric layer. The first electrode is formed on the passivation layer. The metallic crystals are formed in the passivation layer. The metallic crystals include a first metallic crystal, where an end surface of the first metallic crystal abuts against the ultra-thin dielectric layer, and another end surface of the first metallic crystal is connected to the first electrode.

The present application discloses a solar cell, a solar cell module, and a method for manufacturing a solar cell. In one example, a solar cell includes a semiconductor substrate, an ultra-thin dielectric layer, a passivation layer, a first electrode, and metallic crystals. The semiconductor substrate has a light receiving surface and a back surface opposite to the light receiving surface. The ultra-thin dielectric layer is formed on at least one of the back surface and the light receiving surface of the semiconductor substrate. The passivation layer is formed on the ultra-thin dielectric layer. The first electrode is formed on the passivation layer. The metallic crystals are formed in the passivation layer. The metallic crystals include a first metallic crystal, where an end surface of the first metallic crystal abuts against the ultra-thin dielectric layer, and another end surface of the first metallic crystal is connected to the first electrode.