A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB.sub.2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

There is disclosed an ultraviolet (UV) photo sensing element comprising a GaN substrate and a Ta.sub.2O.sub.5 thin film layer, forming a GaN (gallium-nitride) and Ta.sub.2O.sub.5 (tantalum pentoxide) based heterojunction wherein the formed heterojunction receives and converts UV light into electrical signals/in the photovoltaic mode (at 0 V) or in a self-driven mode. Also disclosed is a method of fabrication of an ultraviolet (UV) photodetector (PD) device, the method comprising growing silicon-doped n-type GaN epitaxial layers on a stack of un-doped GaN/sapphire samples, cleaning the GaN samples, pelletizing and depositing tantalum pentoxide (Ta.sub.2O.sub.5) powder on the n-type GaN samples, forming Ta.sub.2O.sub.5/GaN stacks, post-annealing the formed Ta.sub.2O.sub.5/GaN stacks; and depositing high purity Au on the Ta.sub.2O.sub.5/GaN stacks. The photodetector (PD) device is a heterojunction ultraviolet (UV) photodetector (PD) device.

There is disclosed an ultraviolet (UV) photo sensing element comprising a GaN substrate and a Ta.sub.2O.sub.5 thin film layer, forming a GaN (gallium-nitride) and Ta.sub.2O.sub.5 (tantalum pentoxide) based heterojunction wherein the formed heterojunction receives and converts UV light into electrical signals/in the photovoltaic mode (at 0 V) or in a self-driven mode. Also disclosed is a method of fabrication of an ultraviolet (UV) photodetector (PD) device, the method comprising growing silicon-doped n-type GaN epitaxial layers on a stack of un-doped GaN/sapphire samples, cleaning the GaN samples, pelletizing and depositing tantalum pentoxide (Ta.sub.2O.sub.5) powder on the n-type GaN samples, forming Ta.sub.2O.sub.5/GaN stacks, post-annealing the formed Ta.sub.2O.sub.5/GaN stacks; and depositing high purity Au on the Ta.sub.2O.sub.5/GaN stacks. The photodetector (PD) device is a heterojunction ultraviolet (UV) photodetector (PD) device.

Embodiments of the present disclosure relate to a solar cell and a photovoltaic module. The solar cell includes a thin-film solar cell and a bottom cell stacked in a first direction. The bottom cell includes: a transparent conductive layer, a first doped conductive layer, an intrinsic amorphous silicon layer, a substrate, a second doped conductive layer, and one or more electrodes that are stacked in the first direction. The transparent conductive layer is between the thin-film solar cell and the first doped conductive layer, and the one or more electrodes are formed on a side of the second doped conductive layer away from the substrate, the one or more electrodes are in ohmic contact with the second doped conductive layer. The first doped conductive layer includes a doped amorphous silicon layer or a doped microcrystalline silicon layer.

Photovoltaic module including at least one string including at least one first and one second photovoltaic cell and a connector that electrically couples the first and the second photovoltaic cell. The first and the second photovoltaic cells each comprise: a respective photovoltaic conversion region delimited by a respective main front surface and a respective main rear surface opposite to each other; and a respective first electrode structure and a respective second electrode structure, which are formed of conductive material and extend respectively on the first and on the main rear surface. The photovoltaic module is characterised in that the connector is made of a composite material comprising a support matrix and electrically conductive particles, which are dispersed in the thermoplastic polymer matrix. The connector further includes a respective first end portion and a respective second end portion, which respectively contact the second electrode structure of the first photovoltaic cell and the first electrode structure of the second photovoltaic cell.

A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P- and NSi beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

The present disclosure relates to a network polymer and a manufacturing method thereof. An object of one aspect of the present invention is to provide a network polymer that can recover and recycle a key monomer from a polymer with excellent decomposability and is formed therefrom to have excellent mechanical and electrical properties, and a method of manufacturing the same. The network polymer according to one embodiment of the present invention is recycled from a polymer with excellent decomposability and thus is eco-friendly, and exhibits the effect of having excellent mechanical and electrical properties.

An apparatus comprising a plurality of solar cells that each comprise a nanowire titanium oxide core having graphene disposed thereon. By one approach this plurality of solar cells can comprise, at least in part, a titanium foil having the plurality of solar cells disposed thereon wherein at least a majority of the solar cells are aligned substantially parallel to one another and substantially perpendicular to the titanium foil. Such a plurality of solar cells can be disposed between a source of light and another modality of solar energy conversion such that both the solar cells and the another modality of solar energy conversion generate electricity using a same source of light.

An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

A photovoltaic device is fabricated using nanostructured hybrid ferrite materials with interdigital electrodes. The device includes ferrimagnetic ferrite nanopartides having a tunable narrow bandgap of 2.5 eV or less, which are deposited onto a thin ferroelectric film. The device produces an ultrahigh photocurrent density of 13-15 mA/cm.sup.2 when illuminated with sunlight of 100 mW/cm.sup.2, which is comparable to that of organic or silicon-based solar cells.