A semiconductor device and a method of making the same is disclosed. The device includes a substrate having an AlGaN layer located on a GaN layer for forming a two dimensional electron gas at an interface between the AlGaN layer and the GaN layer. The device also includes a plurality of contacts. At least one of the contacts includes an ohmic contact portion located on a major surface of the substrate. The ohmic contact portion comprises a first electrically conductive material. The at least one of the contacts also includes a trench extending down into the substrate from the major surface. The trench passes through the AlGaN layer and into the GaN layer. The trench is at least partially filled with a second electrically conductive material. The second electrically conductive material is a different electrically conductive material to the first electrically conductive material.

A nitride semiconductor device includes a conductive substrate and a nitride semiconductor layer. The nitride semiconductor layer is disposed on the conductive substrate. The nitride semiconductor layer includes a first transistor structure of a lateral type and a second transistor structure of a lateral type. The conductive substrate includes a first potential control region and a second potential control region capable of controlling potential independently from the first potential control region. In planar view of the nitride semiconductor layer, the first transistor structure overlaps the first potential control region and the second transistor structure overlaps the second potential control region.

A method for producing a semiconductor device includes: depositing a barrier layer on a first surface of a semiconductor body having active regions of a semiconductor device; forming a contact layer that at least partially covers the barrier layer, the barrier layer being configured to prevent a material of the contact layer from diffusing into the semiconductor body; forming a first passivation layer on the contact layer and on exposed surfaces of the barrier layer; in a first etching process, removing the first passivation layer from above the barrier layer so as to uncover sections of the barrier layer; and in a second etching process, removing at least some sections of the barrier layer uncovered by the first etching process

A semiconductor device is provided, including a semiconductor body having a semiconductor substrate and an epitaxial layer on the substrate, the epitaxial layer being a first conductivity type, and an active area and a termination area adjacent the active area are in the epitaxial layer, the termination area includes a plurality of laterally spaced apart first regions, the first regions being a second conductivity type opposite to the first type, the plurality of first regions enclosing, observed from a top view of the semiconductor device, the active area and one or more second regions, the second regions are in between the plurality of spaced apart first regions, respectively, the one or more second regions extend further into the epitaxial layer than the plurality of first regions, and the one or more second regions include an insulation material for insulating the plurality of first regions from one another.

Provided is a semiconductor package including a Si substrate, a drift layer, a buffer layer, an anode electrode, a trench, a semiconductor apparatus, an anode terminal, a cathode terminal, and a sealing resin.

Disclosed herein are a Schottky barrier diode (SBD) and a method of manufacturing the same. The SBD includes a substrate, an ohmic layer formed on a portion of an upper portion of the substrate, a Schottky layer formed on a portion of an upper portion of the ohmic layer, an insulating layer formed on a portion of the upper portion of the ohmic layer, a low-k material layer formed on a portion of the upper portion of the substrate, and a Schottky metal layer formed on portions of upper portions of the low-k material layer and the insulating layer.

A tuning method for active metamaterials using IGZO Schottky diodes, wherein the IGZO Schottky diode comprises a substrate, a Schottky electrode, amorphous IGZO active layer, and an ohmic electrode from the bottom up. The method comprises steps as follows: (1) Metamaterials are used as the Schottky electrodes, and amorphous IGZO active layers are used to fully cover the capacitive gap structures in the metamaterials; such capacitive structures in the metamaterials are bonded to the amorphous IGZO active layers to form Shottky barriers; (2) The resulting IGZO Schottky diodes from step (1) are used to tune the metamaterials dynamically.

A tuning method for active metamaterials using IGZO Schottky diodes, wherein the IGZO Schottky diode comprises a substrate, a Schottky electrode, amorphous IGZO active layer, and an ohmic electrode from the bottom up. The method comprises steps as follows: (1) Metamaterials are used as the Schottky electrodes, and amorphous IGZO active layers are used to fully cover the capacitive gap structures in the metamaterials; such capacitive structures in the metamaterials are bonded to the amorphous IGZO active layers to form Shottky barriers; (2) The resulting IGZO Schottky diodes from step (1) are used to tune the metamaterials dynamically.

An electronic device includes a solid body of SiC having a surface and having a first conductivity type. A first implanted region and a second implanted region have a second conductivity type and extend into the solid body in a direction starting from the surface and delimit between them a surface portion of the solid body. A Schottky contact is on the surface and in direct contact with the surface portion. Ohmic contacts are on the surface and in direct contact with the first and second implanted regions. The solid body includes an epitaxial layer including the surface portion and a bulk portion. The surface portion houses a plurality of doped sub-regions which extend in succession one after another in the direction, are of the first conductivity type, and have a respective conductivity level higher than that of the bulk portion.

[Problem] To provide a semiconductor device capable of suppressing a channel current without increasing manufacturing processes, and capable of accurately forming a channel current suppression structure. [Solution] A semiconductor device 1 according to the present invention includes: a substrate 10; an epitaxial layer 20 formed on the substrate 10; and an insulating film 35 provided on one surface 20a side of the epitaxial layer 20. An active portion 40 provided with a predetermined element and a channel current suppression portion 50 being at a termination portion 70 side and provided outside the active portion 40 are provided on the one surface 20a side of the epitaxial layer 20 via the insulating layer 35. The channel current suppression portion 50 is provided with a trench 51 for suppressing the channel current flowing from the active portion 40 to the termination portion 70.