A radiation hardened semiconductor device including a heavily doped substrate of a semiconductor device, a drift layer having a substantially uniform doping concentration and a thickness is provided. The doping concentration and the thickness of the drift layer are such that when the semiconductor device is operating at a maximum voltage rating, an electrical field profile in the drift layer extends less than 80% of the thickness of the drift layer, providing the radiation hardened nature of the device.

Semiconductor devices are provided. In one example, the semiconductor device includes a wide bandgap semiconductor structure. The semiconductor device includes a metal structure on the wide bandgap semiconductor structure. The metal structure has a metal layer. The metal layer has a metal selected from the group consisting of ruthenium, osmium, rhodium, or iridium.

An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal that is constituted of a hexagonal crystal and having a first main surface as a device surface facing a c-plane of the SiC monocrystal and has an off angle inclined with respect to the c-plane, a second main surface at a side opposite to the first main surface, and a side surface facing an a-plane of the SiC monocrystal and has an angle less than the off angle with respect to a normal to the first main surface when the normal is 0.

A multilayered semiconductor device including a substrate including n-type or p-type doped silicon carbide (SiC), an epitaxial oxide layer above the substrate, and a metal layer above the epitaxial oxide layer. In some cases, the epitaxial oxide layer includes n-type conductivity and the substrate is p-type doped, and the substrate and the epitaxial oxide layer form a p/n junction. In some cases, the device can further include an epitaxial transition layer between the substrate and the epitaxial oxide layer, where the epitaxial transition layer includes an n-type doping density that is at least an order of magnitude greater than an n-type doping density of the epitaxial oxide layer. In some cases, the substrate can be a composite substrate including a surface layer including single crystal SiC on a polycrystalline SiC layer. In some cases, a second metal layer is in contact with the substrate.

A multilayered semiconductor device including a substrate including n-type or p-type doped silicon carbide (SiC), an epitaxial oxide layer above the substrate, and a metal layer above the epitaxial oxide layer. In some cases, the epitaxial oxide layer includes n-type conductivity and the substrate is p-type doped, and the substrate and the epitaxial oxide layer form a p/n junction. In some cases, the device can further include an epitaxial transition layer between the substrate and the epitaxial oxide layer, where the epitaxial transition layer includes an n-type doping density that is at least an order of magnitude greater than an n-type doping density of the epitaxial oxide layer. In some cases, the substrate can be a composite substrate including a surface layer including single crystal SiC on a polycrystalline SiC layer. In some cases, a second metal layer is in contact with the substrate.

A diode that may include a substrate with a cathode terminal on a first surface of the substrate. An anode terminal on a second surface of the substrate. An implant portion disposed within the substrate.

Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate including a fin portion, first and second doped regions having a first conductive type, first and second contacts, and first and second metal silicide layers. The fin portion protrudes from a surface of the substrate. The first doped region is disposed in the fin portion. The second doped region is disposed in the fin portion and connected to the first doped region. A doping concentration of the second doped region is greater than that of the first doped region. The first contact is disposed on the first doped region. The second contact is disposed on the second doped region. The first metal silicide layer is disposed between the first contact and the first doped region. The second metal silicide layer is disposed between the second contact and the second doped region.

A grid is manufactured with a combination of ion implant and epitaxy growth. The grid structure is made in a SiC semiconductor material with the steps of a) providing a substrate comprising a doped semiconductor SiC material, said substrate comprising a first layer (n1), b) by epitaxial growth adding at least one doped semiconductor SiC material to form separated second regions (p2) on the first layer (n1), if necessary with aid of removing parts of the added semiconductor material to form separated second regions (p2) on the first layer (n1), and c) by ion implantation at least once at a stage selected from the group consisting of directly after step a), and directly after step b); implanting ions in the first layer (n1) to form first regions (p1). It is possible to manufacture a grid with rounded corners as well as an upper part with a high doping level. It is possible to manufacture a component with efficient voltage blocking, high current conduction, low total resistance, high surge current capability, and fast switching.

A method for manufacturing a SiC-based electronic device, comprising the steps of: implanting, on a front side of a solid body made of SiC having a conductivity of an N type, dopant species of a P type thus forming an implanted region, which extends in the solid body starting from the front side and has a top surface coplanar with the front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region to temperatures comprised between 1500 C. and 2600 C. so as to form a carbon-rich electrical-contact region at the implanted region. The carbon-rich electrical-contact region forms an ohmic contact.

A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P- and NSi beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.