Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

The present invention provides a biochip image-forming system including a case having a cavity, an optical assembly, a chip-holding assembly and an electricity storage assembly. The cavity communicates with a chip inlet for a biochip to be inserted into the cavity through the chip inlet and an image outlet for an image of the biochip to be outputted from the cavity via the image outlet. The optical assembly is received in the cavity and aligned with the image outlet for forming the image of the biochip. The chip-holding assembly is received in the cavity and arranged between the optical assembly and a heating component. The chip-holding assembly aligns with the chip inlet for the biochip to be placed thereon. The electricity storage assembly is electrically connected with the optical assembly and the heating component. As such, a biochip can be analyzed conveniently using said biochip image-forming system.

A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.

Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

A photodetecting device and method of using the same are provided. The photodetecting device includes a transistor, a silicon nano-channel and a filter dye layer. The transistor includes a source, a drain and a gate. The silicon nano-channel connects the source and the drain, and is configured to receive light. The filter dye layer is over a light-receiving surface of the silicon nano-channel.

A bio-sensor includes a substrate having a light-sensing region thereon. A first dielectric layer, a diffusion barrier layer, and a second dielectric layer are disposed on the substrate. A trenched recess structure is formed in the second dielectric layer, which is filled with a light filter layer that is capped with a cap layer. A first passivation layer and a nanocavity construction layer are disposed on the cap layer. A nanocavity is formed in the nanocavity construction layer. The sidewall and bottom surface of the nanocavity is lined with a second passivation layer.

An integrated photodetecting semiconductor optoelectronic component for measuring the intensity of each of the two colour constituents of dichromatic light irradiating the optoelectronic component includes a first SPAD and a second SPAD that detect photons over a broad range of wavelengths. The component also includes a semiconductor optical longpass filter that at least partially covers an active surface area of the first SPAD. The longpass filter is permissive to a first one of the two colour constituents of the dichromatic light and blocking the second one of the two colour constituents of the dichromatic light. The component further includes electronic circuitry for the readout and processing of detection signals delivered by the first and second SPAD. The electronic circuitry is adapted to provide a first intensity output signal and a second intensity output signal via a differential analysis based on the detection signals delivered by the first and second SPAD.

The present invention provides a biochip image-forming system including a case having a cavity, an optical assembly, a chip-holding assembly and an electricity storage assembly. The cavity communicates with a chip inlet for a biochip to be inserted into the cavity through the chip inlet and an image outlet for an image of the biochip to be outputted from the cavity via the image outlet. The optical assembly is received in the cavity and aligned with the image outlet for forming the image of the biochip. The chip-holding assembly is received in the cavity and arranged between the optical assembly and a heating component. The chip-holding assembly aligns with the chip inlet for the biochip to be placed thereon. The electricity storage assembly is electrically connected with the optical assembly and the heating component. As such, a biochip can be analyzed conveniently using said biochip image-forming system.

Compact systems, compact devices and methods are provided to sense changes in luminescence due to environmental influences on a luminescent material. Such systems, devices and methods may be implemented in a compact device, e.g., an integrated circuit package, which may be incorporated into or attached to a device, such as a smartphone, watch, flashlight, vehicle, etc. The systems, devices, and methods described herein are useful in sensing luminescence, as well as changes in luminescence that are indicative of environmental influences, such as the presence and concentration of a gas or chemical, ambient temperature, pressure, light, etc., in an area surrounding a luminescent material included in a compact device.

Disclosed is a color solar cell module including a transparent substrate, a plurality of solar cells disposed on one side of the transparent substrate and each having a light receiving part, and a color layer disposed on a surface of each of the plurality of solar cells on an opposite side surface of the light receiving part.