The present invention discloses a photocell device with a responsivity amplifying structure, comprising: a partially reflective filter layer that transmits light within a specific wavelength range and reflects other wavelengths; a gain layer that interacts with photons to alter their wavelength; and an optoelectronic reaction layer. The gain layer is positioned between the partially reflective filter layer and the reaction layer. Photons interacting with the gain layer either enter the reaction layer for conversion or are reflected back for interacting with the gain layer again and then entering the reaction layer for conversion. In another embodiment, an additional reflective filter is placed between the gain layer and the optoelectronic reaction layer.

Disclosed herein are avalanche photodiodes (APDs) particularly useful for high-sensitivity Geiger-mode APDs formed using an array of micro-cells. The photodetector is formed on a semiconductor substrate of indium phosphide (InP) having epitaxial layers, including indium gallium arsenide (InGaAs) as the photodetecting layer, with n-doped InP to one side, and layers of InP incorporating p-doped regions on the opposite side. The p-doped regions may serve to define an array of micro-cells, which may be arranged in a hexagonal pattern. A well may be etched through the epitaxial structures, allowing an electrode that contacts the n-doped InP layer and another that contacts the p-doped InP regions to be patterned on the same side of the detector. Flip-chip bonding techniques can then attach the semiconductor wafer to a stronger support substrate, which may additionally be configured with electronic circuitry positioned to electrically contact the electrodes on the semiconductor wafer surface.

A photodiode that can detect optical radiation at a broad range of wavelengths including visible light and near-infrared. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.

In examples, a sensor package comprises a die pad and a semiconductor die on the die pad. The semiconductor die has an active surface. The sensor package includes a light sensor on the active surface of the semiconductor die. The sensor package includes a mold compound covering the die pad, the semiconductor die, and a portion of the active surface. The sensor package includes a light filter covering the light sensor and abutting the mold compound. The light filter includes a combination of silicone, metal particles, and an organic dye. The combination is configured to reject light having a wavelength in a target wavelength range. The light filter has a thickness of at least 0.5 millimeters.

An image sensor device includes nanostructures for improving light absorption efficiency. The image sensor device includes a substrate, a light absorption region, and a nanostructure array. The light absorption region is over the substrate. The nanostructure array us over the light absorption region. The nanostructure array includes a plurality of nanostructures repeatedly arranged from a top view.

A sensor includes an array of optically active pixels disposed on a semiconductor die. The array of optically active pixels includes at least one pixel (P1) configured to detect short wavelength infrared radiation (SWIR), and at least one pixel (P2) configured to detect visible light incident on the sensor.

A method for the fabrication of avalanche photodiodes (APDs) useful as high-sensitivity Geiger-mode APDs. The photodetector is formed on a semiconductor substrate of indium phosphide (InP) having epitaxial layers, including indium gallium arsenide (InGaAs) as the photodetecting layer, with n-doped InP to one side, and layers of InP incorporating p-doped regions on the opposite side. The p-doped regions serve to define an array of micro-cells, which may have a hexagonal configuration. A well may be etched through the epitaxial structures, allowing one electrode to contact the n-doped InP layer and another electrode to contact the p-doped InP regions, with both electrodes on the same side of the detector. Bonding techniques then attach the semiconductor wafer to a support substrate, which may additionally be configured with electronic circuitry positioned to electrically contact the electrodes on the semiconductor wafer surface, and diced to form individual devices.

In examples, a method comprises covering at least part of a semiconductor die having a light sensor with a mold compound, the mold compound including a cavity over the light sensor. The method further comprises depositing a solution into the cavity to form a light filter, and curing the solution to form a light filter in the cavity.

A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

An integrated filter optical package including an ambient light sensor that incorporates an infrared (IR) filter in an integrated circuit (IC) stacked-die configuration is provided. The integrated filter optical package incorporates an infrared (IR) coated glass layer to filter out or block IR light while allowing visible (ambient) light to pass through to a light sensitive die having a light sensor. The ambient light sensor detects an amount of visible light that passes through the IR coated glass layer and adjusts a brightness or intensity of a display screen on an electronic device accordingly so that the display screen is readable.