An image sensor device includes nanostructures for improving light absorption efficiency. The image sensor device includes a substrate doped with a first dopant of a first conductivity type, and a light absorption region over the substrate. The light absorption region is doped with a second dopant of a second conductivity type. The second conductivity type is different from the first conductivity type. The nanostructures overlap the light absorption region. One of the nanostructures has a bottom surface at a different level than a top surface of the light absorption region.

An integrated semiconductor optoelectronic component for sensing ambient light levels includes a silicon photomultiplier configured to deliver an output signal indicative of the intensity of the light that irradiates the component. The silicon photomultiplier has an active surface area for light detection. The component also includes an optical filter covering the active surface area of the silicon photomultiplier. The optical filter is adapted to selectively transmit light onto the active surface area as a function of wavelength. The optical filter is a scotopic filter and has a spectral transmission curve that mimics the spectral response of the human eye under low-light conditions. The component further includes readout electronics for processing the output signal of the silicon photomultiplier.

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for mobile applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

An optical sensor device and a packaging method thereof are disclosed. The optical filter structure includes a light-emitting module, a first structure, a second structure and a mask layer. The first and second structures are formed on opposing ends of light-emitting module and cover portions of light-emitting module. The light-emitting module includes a light exit region, a photosensitive member and an optical filter layer. The light exit region and photosensitive member are both located on a side of light-emitting module close to first structure, the first structure exposes light exit region and photosensitive member. The optical filter layer wraps exposed portion of photosensitive member. The mask layer is arranged on first structure and surface of light-emitting module facing first structure, and the mask layer exposes light exit region and photosensitive member, avoiding influence of external light on optical sensor device through mask layer.

An microelectronic device includes a semiconductor substrate, at least one sensing element disposed in the semiconductor substrate, at least one multi-film stack disposed on the semiconductor substrate and covering the sensing element, a refill layer disposed on the semiconductor substrate and encircling the multi-film stack, and a spacer layer disposed on the multi-film stack and the refill layer. An area of a top surface of the multi-film stack is less than an area of a bottom surface of the multi-film stack. The multi-film stack has a first dimension measured in a direction, a section of the refill layer has a second dimension measured in the direction, and a ratio of the second dimension to the first dimension is in a range from 0.03 to 0.06. The refill layer and the spacer layer are organic layers.

A photosensitive die and a manufacturing method thereof are provided. The manufacturing method includes the following steps. First, a wafer is cut to form a plurality of photosensitive dies. Secondly, the photosensitive dies are pasted onto an adhesive film. Then, the adhesive film is stretched to increase the distances between the photosensitive dies. Finally, at least one optical film is provided to cover the surfaces of the photosensitive dies.

An optical sensor device is disclosed. The optical sensor device includes a light-emitting module, a first structure, a second structure and a mask layer, the first and second structures are formed on opposing ends of light-emitting module and cover portions of light-emitting module, the light-emitting module includes a light exit region, a photosensitive member and an optical filter layer, the light exit region and photosensitive member are both located on a side of light-emitting module close to first structure, the first structure exposes light exit region and photosensitive member, the optical filter layer wraps exposed portion of photosensitive member, the mask layer is arranged on first structure and surface of light-emitting module facing first structure, and the mask layer exposes light exit region and photosensitive member, avoiding influence of external light on optical sensor device through mask layer, so as to improve optical performance of optical sensor device.

The present technology relates to a light receiving element, a distance measurement module, and electronic equipment which are capable of reducing leakage of incident light to adjacent pixels. The light receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer which is disposed between the on-chip lens and the wiring layer and includes a photodiode. The wiring layer includes a reflection film which is disposed such that at least a portion thereof overlaps the photodiode when seen in a plan view, and a transfer transistor which reads charge generated by the photodiode, and the reflection film is formed of a material different from that of a metal wiring electrically connected to a gate of the transfer transistor. The present technology can be applied to, for example, a distance measurement module that measures a distance to a subject, and the like.

Provided is a gas sensor that can suppress characteristic variation caused by deformation of a semiconductor substrate. The gas sensor (1) includes a substrate (redistribution layer 30), a light-emitting element (11) provided at a front surface (30a) or embedded in the substrate, a light-receiving element (12) that is provided at the front surface or embedded in the substrate and that receives light emitted from the light-emitting element, and a plurality of external connection terminals (40) at a rear surface (30b) that is an opposite surface to the front surface of the substrate. At least a portion of the plurality of external connection terminals is electrically connected to the light-emitting element and the light-receiving element. The plurality of external connection terminals is arranged such that, in plan view, the light-emitting element and the light-receiving element are not present on a line linking any two external connection terminals.