A readout integrated circuit configured to read out sensing signals from an optical sensing panel including a sensor array for fingerprint sensing is provided. The readout integrated circuit includes a plurality of input terminals, a comparator circuit and a control circuit. The plurality of input terminals are configured to be coupled to a plurality of output terminals of the optical sensing panel. The comparator circuit is configured to receive an output voltage from an output terminal of the plurality of output terminals of the optical sensing panel and at least one reference voltage, compare the output voltage to the at least one reference voltage and output a comparison result. The control circuit is coupled to the comparator circuit. The control circuit is configured to receive the comparison result and determine a supplementary charge amount to be charged to or discharged from the output terminal according to the comparison result.

Sensing pixels each store a sensing voltage level. A method for driving the plurality of sensing pixels includes providing a plurality of readout scan signals to the plurality of sensing pixels, and providing a plurality of reset scan signals to the plurality of sensing pixels. One of the plurality of readout scan signals enables one of the plurality of sensing pixels to output the sensing voltage level stored in the one of the plurality of sensing pixels. One of plurality of reset scan signals resets the sensing voltage level stored in one of the plurality of sensing pixels. One of the plurality of reset scan signals is generated by converting one of the plurality of readout scan signals with a level shift circuit or one of the plurality of readout scan signals is generated by converting one of the plurality of reset scan signals with a level shift circuit.

Provided are an information processing device, an information processing method, and an information processing program capable of reducing a processing load of convolution processing in a convolutional neural network (CNN). An information processing device (1) according to the present disclosure includes a setting unit (51) and a control unit (52). The setting unit (51) sets exposure time of each of imaging pixels in an imaging unit (2), which includes a plurality of imaging pixels arrayed two-dimensionally, to exposure time corresponding to a convolution coefficient of a first layer of a CNN. The control unit (52) causes transfer of signal charges from imaging pixels, which have been exposed, to a floating diffusion (FD), thereby performing convolution processing.

An overlight amount detection circuit (1) according to the present disclosure includes a MOS transistor and a high-impedance element (Ca). A source of the MOS transistor (Mn1) is connected to a vertical signal line (VSL) of an image sensor. The high-impedance element (Ca) is connected to a drain of the MOS transistor (Mn1). The overlight amount detection circuit (1) detects a potential fluctuation of the vertical signal line (VSL) based on a potential defined by a gate potential of the MOS transistor (Mn1), and outputs a potential of a contact point between the drain of the MOS transistor (Mn1) and the high-impedance element (Ca) as a signal indicating an overlight amount detection result.

Embodiments of the present disclosure are directed to an image sensor. The image sensor includes a color filter array, a pixel array, and a plurality of analog-to-digital converters (ADCs). The ADCs convert the analog pixel signal obtained by pixels corresponding to first color filters into a digital pixel signal based on a first bit precision and to convert the analog pixel signal obtained by pixels corresponding to second color filters and third color filters into a digital pixel signal based on a second bit precision. The second bit precision is lower than the first bit precision.

An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.

A method for an image processing circuit includes steps of: receiving a fingerprint image; performing a low-pass filtering on the fingerprint image to remove a moiré signal on the fingerprint image, to generate a filtered image; and performing a data binning on the filtered image to generate an output image.

The dynamic range of a pixel is increased by using selective photosensor resets during a frame time of image capture at a timing depending on the light intensity that the pixel will be exposed to during the frame time. Pixels that will be exposed to high light intensity are reset later in the frame than pixels that will be exposed to lower light intensity.

To generate a value unique to a device in a more preferable mode. A solid-state image sensor includes a plurality of unit pixels disposed in a two-dimensional array, and a drive control unit that controls a first drive to output signals from the unit pixels included in a first unit pixel group of the plurality of unit pixels as an image signal, and a second drive to detect variations in respective signals from two or more of the unit pixels included in a second unit pixel group of the plurality of unit pixels, in which the first unit pixel group and the second unit pixel group have different structures from each other.

An imaging device including a photoelectric converter that converts incident light into an electric charge; a transfer transistor; a first node coupled to the photoelectric converter via the transfer transistor; a first signal detection transistor having a gate coupled to the first node; a second signal detection transistor having a gate coupled to the photoelectric converter; a signal line coupled to one of a source and a drain of the first signal detection transistor; a first transistor coupled to the first node; and a second transistor coupled to the photoelectric converter, wherein one of the source and the drain of the first signal detection transistor is coupled to the first transistor, one of a source and a drain of the second signal detection transistor is coupled to the second transistor, and no transistor is coupled between the photoelectric converter and the gate of the second signal detection transistor.