Disclosed herein are image apparatuses comprising a frontside surface, a backside surface, a storage region (e.g., a storage node or a floating diffusion node), the storage region being situated closer to the frontside surface than to the backside surface, a storage well situated between the backside surface and the storage region, and a doping region situated between the storage region and the storage well. An impurity type of the doping region is opposite an impurity type of the storage well. A lateral area of the storage well is greater than or equal to a lateral area of the storage region, and no portion of a lateral perimeter of the storage region extends outside of a lateral perimeter of the storage well.

A photoelectric conversion device includes: pixels forming columns and each configured to output a pixel signal; and comparator units provided to respective columns and each configured to receive the pixel signal from the pixels on a corresponding column and the reference signal. Each comparator unit includes a comparator having a first input node that receives the pixel signal and a second input node that receives the reference signal, a first capacitor that connects a reference signal line and the second input node, a second capacitor whose one electrode is connected to the second input node, and a select unit that connects the other electrode of the second capacitor to either the reference signal line or a reference voltage line. The other electrode of the second capacitor is connected to the reference signal line during first mode AD conversion and connected to the reference voltage line during second mode AD conversion.

A plurality of comparison circuits each including a first terminal for inputting a first analog signal and a second analog signal and a second terminal connected to a wiring for transmission of a ramp signal A first operation changes an electric potential of the wiring from a predetermined electric potential to a first electric potential to cause at least one of the plurality of comparison circuits to retain a first offset. A second operation, after the first operation, converts the first analog signal into a digital signal. A third operation, after the second operation, changes the electric potential of the wiring to an electric potential included in a range of from the predetermined electric potential to the first electric potential. A fourth operation, after the third operation, converts the second analog signal into a digital signal.

An image sensor comprises a pixel array having a plurality of pixels arranged in a matrix, a readout unit that controls readout of signals from the plurality of pixels, an output unit that outputs the read signals as an image signal and an extraction unit that performs feature amount extraction processing to extract a feature amount using the read signals. The readout of the signals by the readout unit and the feature amount extraction processing by the extraction unit are processed in parallel.

A signal processing circuit includes a reference signal line, a processing circuit that processes a potential of the reference signal line and a potential of an input signal, a first reference voltage supplying circuit that outputs a predetermined potential to one end of the reference signal line, and a second reference voltage supplying circuit that outputs a predetermined potential to the other end of the reference signal line.

An imaging element includes a reading circuit that reads out pixel data obtained by imaging a subject at a first frame rate, a memory that stores the read pixel data, and an output circuit that outputs image data based on the stored pixel data at a second frame rate. The first frame rate is a frame rate higher than the second frame rate. The pixel data includes phase difference pixel data and non-phase difference pixel data different from the phase difference pixel data. The reading circuit reads out the pixel data of each of a plurality of frames in parallel within an output period defined by the second frame rate as a period in which the image data of one frame is output, and performs reading of the non-phase difference pixel data and a plurality of reading of the phase difference pixel data within the output period.

A photoelectric conversion apparatus comprises a first substrate having a light-receiving array and a plurality of driving lines for supplying control signals to the array and a second substrate having a first circuit that includes a driver circuit group configured to generate the control signals and is configured to function as a vertical scanning circuit which supplies the control signals to at least some of the driving lines and a second circuit including a circuit group having the same arrangement as that of the driver circuit group. The second circuit overlaps the at least some driving lines. The at least some driving lines include a driving line not electrically connected to the second circuit. The second substrate includes, at a position overlapping the second circuit, an electrically conductive line used for power supply or transfer of a signal different from the control signals.

An image sensor includes: a pixel array including a plurality of pixels divided into a plurality of binning areas; a readout circuit configured to, from the plurality of binning areas, receive a plurality of pixel signals including a first sensing signal of first pixels and a second sensing signal of second pixels during a single frame period and output a first pixel value corresponding to the first pixels and a second pixel value corresponding to the second pixels based on the plurality of pixel signals; and an image signal processor configured to generate first image data based on a plurality of first pixel values corresponding to the plurality of binning areas, generate second image data based on a plurality of second pixel values corresponding to the plurality of binning areas, and generate output image data by merging the first image data with the second image data.

There is provided a solid-state imaging device including an imaging unit (211) that captures a first captured image, a light emission controlling unit (271) that controls emission of light from the light emitting unit, a decision unit (2331) that decides whether or not the emission of light is detected from within the first captured image, and a transmission controlling unit (2333) that controls, when the emission of light is detected, transmission of a second captured image or data based on the second captured image.

An imaging device according to an embodiment of the present disclosure includes: a first substrate including a sensor pixel that performs photoelectric conversion; a second substrate including a pixel circuit that outputs a pixel signal on a basis of electric charges outputted from the sensor pixel; and a third substrate including a processing circuit that performs signal processing on the pixel signal. The first substrate, the second substrate, and the third substrate are stacked in this order, and a low-permittivity region is provided in at least any region around a circuit that reads electric charges from the sensor pixel and outputs the pixel signal.