An image sensor includes a pixel array including first pixels and second pixels, each of the first and second pixels including photodiodes, a sampling circuit detecting a reset voltage and a pixel voltage from the first and second pixels and generating an analog signal, an analog-to-digital converter image data from the analog signal, and a signal processing circuit generating an image using the image data. Each of the first pixels includes a first conductivity-type well separating the photodiodes and having impurities of a first conductivity-type. The photodiodes have impurities of a second conductivity-type different from the first conductivity-type. Each of the second pixels includes a second conductivity-type well separating the photodiodes and having impurities of the second conductivity-type different from the first conductivity-type. A potential level of the second conductivity-type well is higher than a potential level of the first conductivity-type well.

An image sensor may include: a pixel array including a plurality of pixels; and a timing controller configured to control the pixel array according to an operation mode of the pixel array. The operation mode may be any one of a first mode in which the plurality of pixels operate according to a global shutter method and a second mode in which the plurality of pixels operate according to a dual conversion gain method.

A system includes a processor, a light source controlled by the processor and configured to emit a light, and an event based vision sensor controlled by the processor. The sensor includes a plurality of pixels. At least one of the plurality of pixels includes a photosensor configured to detect incident light and first circuitry configured to output a first signal based on an output from the photosensor. The first signal indicates a change of amount of incident light. The sensor includes a comparator configured to output a comparison result based on the first signal and at least one of a first reference voltage and a second reference voltage. The processor is configured to apply one of the first reference voltage and the second reference voltage to the comparator selectively based on an operation of the light source.

Power consumption in realizing a convolutional neural network (CNN) is reduced.

A solid-state imaging element according to the present technology includes a photoelectric conversion element that photoelectrically converts received light into signal charge corresponding to the amount of received light, a floating diffusion that holds the signal charge obtained by the photoelectric conversion element, a transfer control element that controls transfer of the signal charge from the photoelectric conversion element to the floating diffusion, and a control unit that controls application of a drive voltage to the transfer control element on the basis of a convolution coefficient in a CNN.

A sensor device is provided. The sensor device includes an image sensor having a plurality of photo-sensitive pixels configured to measure light received from a scene. The image sensor is configured to output image data indicative of measurement values of at least part of the plurality of photo-sensitive pixels. Additionally, the sensor device includes processing circuitry configured to determine a histogram based on the image data. The histogram represents a distribution of the measurement values. The processing circuitry is further configured to determine whether an object is present in the scene based on the histogram. In addition, the sensor device includes interface circuitry configured to output presence data indicating whether the object is present in the scene.

The image sensor structure includes a substrate, a readout circuit array, a photoelectric layer and a filter layer. The filter layer has a first spectrum defining a. first wavelength, The photoelectric layer has a second spectrum defining a second wavelength, The second wavelength is longer than the first wavelength. The first wavelength corresponds to a first line passing through a first point and a second point on a curve of the first spectrum of the filter layer. The first point aligns with an extinction coefficient of 0.9. The second point aligns with an extinction coefficient of 0.1. The second wavelength corresponds to a second line passing through a third. point and a fourth point on a curve of the second spectrum of the photoelectric layer. The third point aligns with an extinction coefficient of 0.9. The fourth point aligns with an extinction coefficient of 0.1.

An imaging apparatus of the present disclosure includes: a plurality of pixel blocks that each includes a plurality of light-receiving pixels including color filters of mutually the same color, the plurality of light-receiving pixels being divided into a plurality of pixel pairs each including two light-receiving pixels; and a plurality of lenses provided at respective positions corresponding to the plurality of pixel pairs.

A pixel array and an image sensor including the pixel array are provided. The pixel array included in the image sensor includes a plurality of pixels arranged in a matrix, and a plurality of column lines each commonly connected to pixels arranged on a same column from among the plurality of pixels. Each of the plurality of pixels includes four subpixels. Each of the four subpixels includes four photoelectric conversion devices; a floating diffusion region storing electric charges generated by the four photoelectric conversion devices; and four transmission gates configured to transmit the electric charges generated by the four photoelectric conversion devices to the floating diffusion region. Four floating diffusion regions included in the four subpixels are electrically connected to one another via internal wiring. Each of the plurality of pixels further includes a reset gate, a first driving gate and a first selection gate.

A semiconductor apparatus includes a stack of first and second chips each having a plurality of pixel circuits arranged in a matrix form. The pixel circuit of the a-th row and the e1-th column is connected to the electric circuit of the p-th row and the v-th column. The pixel circuit of the a-th row and the f1-th column is connected to the electric circuit of the q-th row and the v-th column. The pixel circuit of the a-th row and the g1-th column is connected to the electric circuit of the r-th row and the v-th column. The pixel circuit of the a-th row and the h1-th column is connected to the electric circuit of the s-th row and the v-th column.

An imaging device 100 includes a pixel array PA. A first period, a third period, and a second period appear in this order in one frame. During the first period, pixel signal readout is performed on at least one first row in the pixel array PA. During the second period, pixel signal readout is performed on at least one second row in the pixel array PA. At least one of the at least one first row or the at least one second row includes two rows in the pixel array PA. During the third period, no pixel signal readout is performed on the rows in the pixel array PA. Each of the first period and the second period is one of the high-sensitivity exposure period and the low-sensitivity exposure period. The third period is the other of the high-sensitivity exposure period and the low-sensitivity exposure period.