An imaging apparatus includes a first photoelectric conversion unit configured to convert light into charge, a second photoelectric conversion unit configured to convert light into charge, and a comparison unit. The comparison unit includes a first transistor and a second transistor. The first transistor receives a signal that is based on the charge converted by the first photoelectric conversion unit. The second transistor receives a signal that is based on the charge converted by the second photoelectric conversion unit.

An image signal processor and an image sensor including the same are disclosed. An image sensor includes a pixel array configured to convert received optical signals into electrical signals, a readout circuit configured to convert the electrical signals into image data and output the image data, and an image signal processor configured to perform deep learning-based image processing on the image data based on training data selected from among first training data and second training data based on a noise level of the image data.

A photodetector device is provided that includes a ROIC having a top surface with a plurality of electrically conductive first electrodes within a pattern of surface areas on the top surface each surface area having a border, and an electrically conductive electrode grid having a portion on the border of each of the surface areas; and a photodetector film overlying the surface area. The electrode grid can be configured to surround each surface area to define the borders of the surface areas as pixels. The photodetector film can be a colloidal quantum dot film. The ROIC has circuit elements signal-connected to the plurality of first electrodes. Methods for forming the photodetector device include photolithography and deposition methods.

An image sensor includes a dual conversion gain pixel to output a high conversion gain signal according to a high conversion gain and output a low conversion gain signal according to a low conversion gain, by adjusting a conversion gain; a scaler to scale a voltage level of the high conversion gain signal; a ramp generator to generate a first ramp signal and a second ramp signal, slopes of the first and second ramp signals being different from each other; a comparator to compare the scaled high conversion gain signal and the first ramp signal to output a first comparison result, and compare the low conversion gain signal and the second ramp signal to output a second comparison result; and a counter to output a first counting result value based on the first comparison result and output a second counting result value based on the second comparison result.

A pixel cell includes a plurality of subpixels to generate image charge in response to incident light. The subpixels include an inner subpixel laterally surrounded by outer subpixels. A first plurality of transfer gates disposed proximate to the inner subpixel and a first grouping of outer subpixels. A first floating diffusion is coupled to receive the image charge from the first grouping of outer subpixels through a first plurality of transfer gates. A second plurality of transfer gates disposed proximate to the inner subpixel and the second grouping of outer subpixels. A second floating diffusion disposed in the semiconductor material and coupled to receive the image charge from each one of the second grouping of outer subpixels through the second plurality of transfer gates. The image charge in the inner subpixel is received by the first, second, or both floating diffusions through respective transfer gates.

Various implementations disclosed herein include devices, systems, and methods that determine a control signal before synchronous readout of a frame (or part of the frame) is performed by a sensor. Various implementations disclosed herein include devices, systems, and methods that determine event density (e.g., a dense row signal or a dense frame signal) before synchronous readout is performed by the sensor. In some implementations, the event camera is capable of operating in a first readout mode and a second readout mode based on a number of events. In the second readout mode, less data per pixel may be readout.

An image sensor includes a plurality of pixels. Each pixel includes a photoelectric conversion portion, a reset gate for controlling removal of a charge accumulated in the photoelectric conversion portion, a charge accumulation portion, an accumulation gate for controlling a transfer of the charge from the photoelectric conversion portion to the charge accumulation portion, and a readout gate for controlling readout of the charge from the charge accumulation portion. The reset gate removes the charge generated in the photoelectric conversion portion by excitation light. The accumulation gate transfers the charge generated in the photoelectric conversion portion by fluorescence to the charge accumulation portion. The readout gate performs control for reading out the charge after the charge transfer is performed n times. The number n of the charge transfers is set for each pixel.

An imaging element of the present disclosure includes an analog-to-digital converter configured to convert multiple analog pixel signals that are acquired under multiple imaging conditions different from each other and that are output from a pixel, to multiple digital pixel signals, a threshold setting unit configured to set, on an input side of the analog-to-digital converter, a threshold that is randomly varied, a comparison unit configured to use, as a comparison threshold, the threshold set by the threshold setting unit and compare the comparison threshold with one of the multiple analog pixel signals, and a selection unit configured to select and output, on the basis of a result of comparison from the comparison unit, one of the multiple digital pixel signals that are output from the analog-to-digital converter.

An imaging device including: a first semiconductor substrate; a second semiconductor substrate; and a wiring layer. The first semiconductor substrate has a first surface and a second surface and includes a sensor pixel. The second semiconductor substrate has a third surface and a fourth surface and includes a readout circuit that outputs a pixel signal based on an output from the sensor pixel. The second semiconductor substrate is stacked on the first semiconductor substrate with the first surface and the fourth surface opposed to each other. The wiring layer is between the first semiconductor substrate and the second semiconductor substrate and includes a first wiring line and a second wiring line that are electrically coupled to each other. One of the first wiring line and the second wiring line is in an electrically floating state while the other is electrically coupled to a transistor.

The present disclosure relates to an imaging circuit and an imaging device capable of performing reading at high speed while reducing a circuit scale.

An imaging circuit according to the present disclosure includes a plurality of circuit blocks each including a photoelectric conversion element configured to photoelectrically convert incident light to generate a photocurrent and a current-voltage conversion circuit configured to convert the photocurrent into a voltage signal, a quantizer configured to generate a detection signal of an address event in accordance with a result of comparing the voltage signal supplied from at least one of the plurality of circuit blocks with a threshold, a demultiplexer connected to a subsequent stage of the quantizer, and a plurality of latch circuits connected to different output terminals of the demultiplexer.