Some embodiments include a system, comprising: a plurality of pixels; a plurality of data lines coupled to the pixels; a plurality of switches coupling the pixels to the data lines; a plurality of readout circuits coupled to the data lines; control logic coupled to the readout circuits, the control logic configured to, for one of the pixels: acquire a first value for the pixel while the corresponding switch is in an off state; reset the corresponding readout circuit corresponding for the pixel; acquire a second value for the pixel after resetting the readout circuit; turn on the corresponding switch; acquire a third value for the pixel after turning on the corresponding switch; and combine the first value, the second value, and the third value into a combined value for the pixel.

An imaging device includes a plurality of pixel sensors that respond to incident light. At least one drive-sense circuit is configured to generating a sensed signal corresponding to one of the plurality of pixel sensors. The at least one drive-sense circuit includes: a first conversion circuit configured to convert, a receive signal component of a sensor signal corresponding to the one of the plurality of pixel sensors into the sensed signal, wherein the sensed signal indicates a change in a capacitance associated with the one of the plurality of pixel sensors; a second conversion circuit configured to generate, based on the sensed signal, a drive signal component of the sensor signal corresponding to the one of the plurality of pixel sensors. The at least one drive-sense circuit is further configured to generate a plurality of other sensed signals corresponding to other ones of the plurality of pixel sensors for the other ones of the plurality of pixel sensors. A graphics processing module is configured to generate image data based on the sensed signal and the plurality of other sensed signals.

Disclosed is an image sensor. The image sensor includes an active pixel sensor array including first to fourth pixel units sequentially arranged in a column direction, and each of the first to fourth pixel units is composed of a plurality of pixels. A first pixel group including the first and second pixel units is connected to a first column line, and a second pixel group including the third pixel unit and the fourth pixel unit is connected to a second column line. The image sensor includes a correlated double sampling circuit including first and second correlated double samplers and configured to convert a first sense voltage sensed from a selected pixel of the first pixel group and a second sense voltage sensed from a selected pixel of the second pixel group into a first correlated double sampling signal and a second correlated double sampling signal, respectively.

There is provided an imaging device, comprising differential amplifier circuitry comprising a first amplification transistor and a second amplification transistor; and a plurality of pixels including a first pixel and a second pixel, wherein the first pixel includes a first photoelectric converter, a first reset transistor, and the first amplification transistor, and wherein the second pixel includes a second photoelectric converter, a second reset transistor, and the second amplification transistor, wherein the first reset transistor is coupled to a first reset voltage, and wherein the second reset transistor is coupled to a second reset voltage different than the first reset voltage.

Correlated double sampling column-level readout of an image sensor pixel may be provided by a charge transfer amplifier that is configured and operated to itself provide for both correlated-double-sampling and amplification of floating diffusion potentials read out from the pixel onto a column bus after reset of the floating diffusion (I) but before transferring photocharge to the floating diffusion (the reset potential) and (ii) after transferring photocharge to the floating diffusion (the transfer potential). A common capacitor of the charge transfer amplifier may sample both the reset potential and the transfer potential such that a change in potential (and corresponding charge change) on the capacitor represents the difference between the transfer potential and reset potential, and the magnitude of this change is amplified by the charge change being transferred between the common capacitor and a second capacitor selectively coupled to the common capacitor.

A solid-state imaging apparatus according to an embodiment of the present disclosure includes a photoelectric transducer, a transfer transistor, a floating diffusion, a reset transistor, an amplifier transistor, and a selection transistor. The reset transistor includes a gate insulating film formed thinner than the gate insulating film of the transfer transistor.

A solid-state imaging device capable of suppressing variations in reference voltages and improving performance of reference voltages is provided. According to one embodiment, the solid-state imaging device includes a pixel outputting a luminance signal voltage corresponding to an amount of incident light, reference voltages, a reference voltage generation circuit outputting a ramp signal and an inverse ramp signal, and an AD converter, and the AD converter includes a comparator including an amplifier coupled to one input terminal, a reference voltage and an input terminal coupled to each of the ramp signals via a capacitor, and an input terminal coupled to each of the reference voltage and the ramp signal via a capacitor, and a ramp current cancel circuit coupled to each of the reference voltages via a cancel capacitor.

Provided are a multicolor photodetector and a method of fabricating the same through integration with a readout integrated circuit. The multicolor photodetector may be fabricated by providing an integrated circuit device in which a readout integrated circuit is wired; forming an assembly in which a first photodetection layer for detecting first wavelength light from incident light and a second photodetection layer for detecting second wavelength light from the incident light on the integrated circuit device; and electrically connecting the first photodetection layer and the second photodetection layer to the readout integrated circuit using connecting members.

A photoelectric conversion device includes first to fourth pixel columns. Each of the first to fourth pixel columns includes a plurality of pixels arranged in a predetermined direction. Each of the plurality of pixels arranged in the first to fourth pixel columns includes a photoelectric conversion element configured to receive light of a wavelength region and generate a signal charge. Each of the plurality of pixels arranged in the first to fourth pixel columns further includes a circuit configured to convert the signal charge generated by the photoelectric conversion element into a voltage signal. Directions of reading the voltage signals from the first pixel column and the second pixel column are different from directions of reading the voltage signals from the third pixel column and the fourth pixel column.

The memory control unit 12 causes a memory unit 13 to store input image data divided into a first block having pixel data of a predetermined number of pixels in a line direction for a plurality of lines, a second block having pixel data of a predetermined number of pixels following the first block in the line direction for a plurality of lines including a part of the lines of the first block, and a third block having pixel data of a predetermined number of pixels following in the line direction for a plurality of lines including a line different from the line included in the second block in the first block. The arithmetic processing unit 15 calculates an interpolation position that is a position before image conversion corresponding to a pixel position after image conversion, the memory control unit 12 reads the pixel data of the first to third blocks including the pixel data of the peripheral pixel of the interpolation position from the memory unit 13, and the interpolation processing unit 14 generates the pixel data of the interpolation position by the interpolation processing using the read peripheral pixel. The processing speed of the image processing can be improved.