Systems an methods are provided that disclose providing a positioning service for devices based on light received from one or more light sources. This light based positioning service uses light information transmitted by each light source to determine the position of the device. The positioning information can include three dimension position information in a building that can then be used to deliver services and information to a mobile device. The content delivered to a mobile device can include multimedia, text, audio, and/or pictorial information. The positioning information along with other location or positioning information can be used in providing augmented reality or location aware services. The light sources can be independent beacons that broadcast information in visible light at a rate that is undetectable by the human eye. Content can be retrieved from a server over a communications connection.

Provided are a method of analyzing a target substance to be measured, the method including: dividing a surface of a measuring unit of a CMOS image sensor into a plurality of pixels, directly fixing a bioreceptor onto the surface of the measuring unit of the CMOS image sensor, and measuring chemiluminescent signals depending on concentrations of the target substance to be measured, and a CMOS image sensor applied to the same.

An image capturing apparatus comprises: an image sensor including a pixel region including a plurality of pixel units, arranged in a matrix, each having first and second photoelectric conversion units, and a storage unit provided for each column; and a driving unit configured to drive the image sensor by, for each pixel unit to be read of the plurality of pixel units, exclusively selecting an operation of combining a signal of the first photoelectric conversion unit and a signal of the second photoelectric conversion unit for each pixel unit and outputting the combined signal to the storage unit, an operation of reading a signal from the first photoelectric conversion unit of each pixel unit to the storage unit, or an operation of reading a signal from the second photoelectric conversion unit of each pixel unit to the storage unit.

A solid-state imaging device, in which a plurality of overlapping substrates are included and the plurality of substrates are electrically connected to each other, includes a pixel circuit, a first readout circuit configured to read out signals from the photoelectric conversion units, a signal-processing circuit configured to perform signal processing on signals read out from the photoelectric conversion units, an output circuit configured to output signals processed by the signal-processing circuit to the outside, a first wiring configured to be provided to correspond to each of the four circuits and to supply a first voltage to each of the four circuits, a second wiring configured to be provided to correspond to each of the four circuits and to supply a second voltage different from the first voltage to each of the circuits, and a capacitor that is electrically connected with the first wiring and the second wiring.

A high-accurate imaging increased in time resolution can be made. The camera device is provided with a plurality of pixels that include a light-receiving surface embedded region to convert incident light into charges, a charge accumulation region to accumulate the charges, and a gate electrode to control the charges to be transferred from the light-receiving surface embedded region to the charge accumulation region, and are one-dimensionally arranged in each of a plurality of columns, a timing generation circuit which generates a control pulse voltage to be applied to the gate electrode, and a correction circuit unit which is provided in accordance with each of a plurality of columns of the pixels, delays the control pulse voltage in a variable time, and applies the control pulse voltage to the gate electrodes of the plurality of pixels belonging to a column corresponding to the control pulse voltage.

A photodiode assembly comprises a photoconductive substrate, including a P-doped region coupled with a controllable voltage biasing source, and an adjacent N-doped well. The photodiode assembly further comprises first and second capacitors coupled with the photoconductive substrate on first and second sides of the N-doped well. First and second control inputs are also coupled with the photoconductive substrate, wherein activation of the first control input causes electrons to flow through a first multiplication region of the N-doped well toward the first capacitor in response to photons striking the photoconductive substrate, and activation of the second control input causes electrons to flow through a second multiplication region of the N-doped well toward the second capacitor in response to photons striking the photoconductive substrate. Selectively controlling a voltage provided by the voltage biasing source changes a multiplication effect provided by the first and second multiplication regions of the N-doped well.

An image sensor is provided. The image sensor includes a pixel array in which a plurality of pixels are arranged, wherein each of the plurality of pixels includes a photodiode; a floating diffusion node configured to integrate photocharges generated in the photodiode; a first sampling transistor electrically connected to a first node; a first capacitor electrically connected to a first node and configured to store a charge corresponding to a voltage of the floating diffusion node which is reset; a second sampling transistor electrically connected to a second node; a second capacitor electrically connected to the second node and configured to store a charge corresponding to a voltage of the floating diffusion node in which the photocharges are integrated; and at least one mode transistor configured to adjust an equivalent capacitance of each of the first node and the second node according to a mode control signal.

An image sensor may include an array of image pixels arranged in rows and columns. Each column of pixels may be coupled to current source transistors and capacitance cancellation circuitry. The capacitance cancellation circuitry may include capacitors, a common source amplifier transistor, an autozero switch, a switch for selectively deactivating at least one of the capacitors during sample-and-hold reset and sample-and-hold signal operations.

The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

The present technology relates to a solid-state imaging device and an electronic apparatus that can increase the theoretical yield of a chip. A pixel array is formed with pixels arranged in a matrix. A drive control unit is provided for each set of pixel rows in the pixel array. The drive control unit operates to simultaneously drive the pixels included in the set of pixel rows. The present technology can be applied to a CMOS image sensor including A/D converter circuits for each column in a pixel array.