The present technology relates to an imaging device, a driving method, and an electronic apparatus capable of more quickly acquiring a high-quality image. In a pixel of a solid-state imaging device, a photoelectric conversion unit that performs a photoelectric conversion of incident light is disposed. An electric charge/voltage converting unit converts electric charge acquired by the photoelectric conversion unit into a voltage signal. A signal comparator compares a supplied reference signal with the voltage signal acquired by the electric charge/voltage converting unit and outputs a result of the comparison. A storage unit adaptively changes the conversion efficiency of the electric charge/voltage converting unit on the basis of a control signal acquired on the basis of a result of the comparison output from the signal comparator. The present technology can be applied to a solid-state imaging device.

The present disclosure relates to an image pickup apparatus, an image pickup method, a program, and an image processing apparatus that enable a color image to be generated on the basis of an infrared image and a visible image captured using an image pickup device that uses a focal plane reading system.

An image pickup apparatus according to the present disclosure includes: an image pickup device that generates, in a one frame period, sub-frame images in a number corresponding to 3 or more sub-frame periods; an infrared light irradiation unit that turns on/off irradiation of infrared light onto an image pickup range in a time length unit that is the same as the sub-frame period in the one frame period; and a color image generation unit that generates a color image in a predetermined frame rate on the basis of an infrared image based on the sub-frame image in which a period during which the infrared light is irradiated is included in an exposure time and a visible image based on the sub-frame image in which the period during which the infrared light is irradiated is not included in the exposure time. The present disclosure is applicable to a surveillance camera, for example.

The present disclosure relates to a solid-state imaging device that can achieve a high S/N ratio at a high sensitivity level without any decrease in resolution, and to an electronic apparatus. In the upper layer, the respective pixels of a photoelectric conversion unit that absorbs light of a first wavelength are tilted at approximately 45 degrees with respect to a square pixel array, and are two-dimensionally arranged in horizontal directions and vertical directions in an oblique array.

The respective pixels of a photoelectric conversion unit that is sensitive to light of a second or third wavelength are arranged under the first photoelectric conversion unit. That is, pixels that are √{square root over (2)} times as large in size (twice as large in area) and are rotated 45 degrees are arranged in an oblique array. The present disclosure can be applied to solid-state imaging devices that are used in imaging apparatuses, for example.

The present technology relates to a solid-state imaging device and an electronic device capable of improving a saturation characteristic. A photo diode is formed on a substrate, and a floating diffusion accumulates a signal charge read from the photo diode. A plurality of vertical gate electrodes is formed from a surface of the substrate in a depth direction in a region between the photo diode and the floating diffusion, and an overflow path is formed in a region interposed between a plurality of vertical gate electrodes. The present technology may be applied to a CMOS image sensor.

Provided is an imaging apparatus that includes a pixel array portion, a plurality of unit pixels being arranged in the pixel array portion and a driving unit controls an operation of the unit pixel, in which the unit pixel includes a photoelectric converter, a charge retention unit configured to retain a charge, a charge-voltage converter converts the charge into a voltage, a first transmitting unit transmits the charge from the photoelectric converter to the charge retention unit, a second transmitting unit transmits the charge from the photoelectric converter to the charge-voltage converter, and a third transmitting unit transmits the charge from the charge retention unit to the charge-voltage converter.

The present technology relates to an imaging device capable of preventing a decrease of sensitivity of the imaging device in a case where a capacitance element is provided in a pixel, a method of manufacturing an imaging device, and an electronic device. The imaging device includes, in a pixel, a photoelectric conversion element and a capacitance element accumulating an electric charge generated by the photoelectric conversion element. The capacitance element includes a first electrode including a plurality of trenches, a plurality of second electrodes each having a cross-sectional area smaller than a contact connected to a gate electrode of a transistor in the pixel, and buried in each of the trenches, and a first insulating film disposed between the first electrode and the second electrode in each of the trenches. The present technology can be applied, for example, to a backside irradiation-type CMOS image sensor.

Provided is an endoscope, in which an image sensor is attached to a transducer probe such that the diameter of the transducer probe is reduced so as to decrease the feeling of irritation and prevent injuries of internal organs, and one or more light sources are attached to a leading end of the transducer probe so as to obtain images, which are clear and appropriate for purposes.

An image capture apparatus has an A/D converter that compares a pixel signal read out from a pixel having a photoelectric conversion element with a reference signal whose voltage changes over time, and obtains, as an A/D conversion result of the pixel signal, a digital value corresponding to a time required for a magnitude relationship between the pixel signal and the reference signal to change. The A/D converter determines a level of the pixel signal using a threshold value, makes a change rate of the voltage of the reference signal different depending on a determination result, and changes the threshold value according to a signal expansion amount of the pixel signal after A/D conversion.

A photoelectric conversion apparatus that includes a pixel region having photoelectric conversion elements includes a semiconductor layer having first and second surfaces, and the photoelectric conversion elements are disposed between the first and second surfaces. With a virtual plane extending along the second surface between the first and second surfaces being a third plane, the pixel region includes an element isolating portion constituted by an insulator disposed closer to the first surface than the third plane, and first and second isolating portions constituted by grooves provided in the semiconductor layer to pass through the third plane. The first isolating portion overlaps the element isolating portion in a normal direction to the third plane. An end of the second isolating portion on a side on the first surface is closer to the second surface than an end of the first isolating portion on a side on the first surface is.

A solid-state image pickup apparatus includes a pixel region in which a plurality of pixels each including a photoelectric conversion element are arranged, transfer wirings formed on the pixel region in parallel to each other with uniform opening widths, and different wirings formed in a wiring layer above the transfer wirings. At least a part of the different wirings is overlapped with the transfer wirings on a plan position. The transfer wirings and the different wirings form a light shielding structure in the pixel region.