The present embodiment relates to a distance sensor configured to inject an equal amount of current into storage nodes coupled, respectively, to charge collection regions where charges of a photosensitive region is distributed by driving of first and second transfer electrodes and obtain a distance to an object based on difference information on charge amounts of the respective storage nodes. Saturation caused by disturbance light of each storage node is avoided by injecting the equal amount of current to each storage node, and the difference information on the charge amounts of the respective storage nodes, which is not easily affected by the current injection, is obtained by driving the first and second transfer electrodes according to the plurality of frames representing the electrode drive pattern, respectively.

The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a plurality of pixel regions disposed within a substrate and respectively comprising a photodiode configured to receive radiation that enters the substrate from a back-side. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions surrounding the photodiode. The BDTI structure extends from the back-side of the substrate to a first depth within the substrate. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel regions overlying the photodiode. The MDTI structure extends from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure is a continuous integral unit having a ring shape.

To generate a value unique to a device in a more preferable mode. A solid-state image sensor includes a plurality of unit pixels disposed in a two-dimensional array, and a drive control unit that controls a first drive to output signals from the unit pixels included in a first unit pixel group of the plurality of unit pixels as an image signal, and a second drive to detect variations in respective signals from two or more of the unit pixels included in a second unit pixel group of the plurality of unit pixels, in which the first unit pixel group and the second unit pixel group have different structures from each other.

An imaging device including a photoelectric converter that converts incident light into an electric charge; a transfer transistor; a first node coupled to the photoelectric converter via the transfer transistor; a first signal detection transistor having a gate coupled to the first node; a second signal detection transistor having a gate coupled to the photoelectric converter; a signal line coupled to one of a source and a drain of the first signal detection transistor; a first transistor coupled to the first node; and a second transistor coupled to the photoelectric converter, wherein one of the source and the drain of the first signal detection transistor is coupled to the first transistor, one of a source and a drain of the second signal detection transistor is coupled to the second transistor, and no transistor is coupled between the photoelectric converter and the gate of the second signal detection transistor.

A photoelectric conversion apparatus is provided. The apparatus comprises a pixel region in which a plurality of pixels each including a photoelectric conversion portion and a charge holding portion formed in a substrate are arranged, and a peripheral region. Above the substrate, an electrically conductive layer including an electrode pattern for transferring charges in the photoelectric conversion portion to the charge holding portion, a wiring layer including a wiring pattern electrically connected to the electrode pattern, an interlayer film arranged between the wiring layer and the substrate, a metal layer arranged between the interlayer film and the substrate and arranged so as to cover at least the charge holding portion and the electrode pattern are provided. In the peripheral region, the metal layer covers at least an upper surface of an electrically conductive pattern included in the electrically conductive layer.

The photoelectric conversion device includes pixels each including photoelectric converters and a floating diffusion to which charges of the photoelectric converters are transferred, a vertical scanning unit for performing readout processing and reset processing on the pixels while switching the photoelectric converter to be processed and the floating diffusion to be processed, and a control unit that controls the vertical scanning unit. The control unit includes a readout row address generation unit and a reset row address generation unit that generate a row address to be processed. A first cycle in which the photoelectric converter is switched is shorter than a second cycle in which the floating diffusion is switched, an update cycle of the row address is equal to the second cycle, and a setting unit of an update timing of the row address is equal to the length of one cycle of the first cycle.

A vehicle vision system includes an extender element disposed at a rear portion of a vehicle. The extender element includes an extender portion and an end portion, with the end portion viewable to a viewer who is viewing the rear portion of the vehicle. The end portion includes at least one selected from the group consisting of (i) a vehicle emblem and (ii) a vehicle logo. A rear backup camera assembly is at least partially disposed in the extender portion of the extender element. The rear backup camera assembly is disposed with its lens viewing exterior of the vehicle. The extender element is incapable of extending such that the rear backup camera assembly is non-movable relative to the rear portion of the vehicle when disposed at the rear portion of the vehicle.

An image sensor has an image sensor array and circuit design employing a method of black level compensation to address image shading related to global exposure image capture and rolling row by row readout schemes. An image sensor including the invented black level compensation pixel array and method may be incorporated within a digital camera.

A photoelectric conversion apparatus comprises a first substrate having a light-receiving array and a plurality of driving lines for supplying control signals to the array and a second substrate having a first circuit that includes a driver circuit group configured to generate the control signals and is configured to function as a vertical scanning circuit which supplies the control signals to at least some of the driving lines and a second circuit including a circuit group having the same arrangement as that of the driver circuit group. The second circuit overlaps the at least some driving lines. The at least some driving lines include a driving line not electrically connected to the second circuit. The second substrate includes, at a position overlapping the second circuit, an electrically conductive line used for power supply or transfer of a signal different from the control signals.

An image sensor includes: a pixel array including a plurality of pixels divided into a plurality of binning areas; a readout circuit configured to, from the plurality of binning areas, receive a plurality of pixel signals including a first sensing signal of first pixels and a second sensing signal of second pixels during a single frame period and output a first pixel value corresponding to the first pixels and a second pixel value corresponding to the second pixels based on the plurality of pixel signals; and an image signal processor configured to generate first image data based on a plurality of first pixel values corresponding to the plurality of binning areas, generate second image data based on a plurality of second pixel values corresponding to the plurality of binning areas, and generate output image data by merging the first image data with the second image data.