An endoscope system including: a light source that generates illuminating light; a controller that receives a light control signal and controls the illuminating light; a light receiving unit having pixels in a matrix; a reading unit that sequentially reads an electrical signal for each line; and an imaging controller that repeats read processing to sequentially read, for each line, the electrical signal from the light receiving unit, and exposure processing for exposing the light receiving unit. Where a blanking period is a time from completion of reading of a last line for a preceding frame to start of reading of a first line for a following frame and a read period is a time from a start of reading of a first line for a frame to completion of reading of a last line of the frame such that the blanking period can be changed without changing the read period.

An imaging device includes. a first terminal to which a first voltage is applied; a second terminal to which a second voltage different from the first voltage is applied; a voltage generator generating a ramp voltage which is a voltage varying with time; a first switching circuit connected to the second terminal and the voltage generator; a second switching circuit connected to the first terminal and the first switching circuit, and pixels each including a photoelectric converter generating a signal, and a signal detection circuit detecting the signal, at least one of the pixels connected to the second switching circuit. The first switching circuit selectively connects one of the second terminal and the voltage generator with the second switching circuit. The second switching circuit selectively connects one of the first voltage terminal and the first switching circuit with the at least one of the pixels.

There is provided a solid state image sensor including a photoelectric conversion unit formed and embedded in a semiconductor substrate, an impurity region that retains an electric charge generated by the photoelectric conversion unit, and a transfer transistor that transfers the electric charge to the impurity region. A gate electrode of the transfer transistor is formed in a depth direction toward the photoelectric conversion unit in the semiconductor substrate, from a surface of the semiconductor substrate on which the impurity region is formed. A channel portion of the transfer transistor is surrounded by the gate electrode in two or more directions other than a direction of the impurity region, as seen from the depth direction.

The present disclosure relates to a solid-state imaging device capable of receiving light entering a gap between pixel regions of imaging units by the pixel region when a plurality of imaging units is arranged, a method of manufacturing the same, and an electronic device. A CMOS image sensor includes a pixel region formed of a plurality of pixels. A convex lens is provided for each of a plurality of CMOS image sensors. A plurality of CMOS image sensors is arranged on a supporting substrate. The present disclosure is applicable to a solid-state imaging device and the like in which a plurality of CMOS image sensors is arranged on the supporting substrate, for example.

The processing of RGB image data can be optimized by performing optimization operations on the image data when it is converted into the YCbCr color space. First, a raw RGB color space is converted into a YCbCr color space, and raw RGB image data is converted into YCbCr image data using the YCbCr color space. For each Y-layer of the YCbCr image data, a 2D LUT is generated. The YCbCr image data is converted into optimized CbCr image data using the 2D LUTs, and optimized YCbCr image data is generated by blending CbCr image data corresponding to multiple Y-layers. The optimized YCbCr image data is converted into sRGB image data, and a tone curve is applied to the sRGB image data to produce optimized sRGB image data.

A circuit for reading-out a voltage variation of a floating diffusion area includes a reference capacitor suitable for causing a voltage variation of the floating diffusion area based on a charge transfer signal and a read-out block including the floating diffusion area, and suitable for initializing the floating diffusion area, performing a read-out on an initial voltage of the floating diffusion area and performing a read-out on a varied voltage of the floating diffusion area caused by the reference capacitor.

Certain aspects relate to systems and techniques for folded optic stereoscopic imaging, wherein a number of folded optic paths each direct a different one of a corresponding number of stereoscopic images toward a portion of a single image sensor. Each folded optic path can include a set of optics including a first light folding surface positioned to receive light propagating from a scene along a first optical axis and redirect the light along a second optical axis, a second light folding surface positioned to redirect the light from the second optical axis to a third optical axis, and lens elements positioned along at least the first and second optical axes and including a first subset having telescopic optical characteristics and a second subset lengthening the optical path length. The sensor can be a three-dimensionally stacked backside illuminated sensor wafer and reconfigurable instruction cell array processing wafer that performs depth processing.

An Infra Red detector system and method is disclosed that implements a digital coordinate generator onto a 2D focal plane array infrared detector. The method used in this form of the invention by the IR detector system, generates X-Y coordinate data for pixels containing detected target data. Advantageously, it reduces subsequent signal post processing required to generate the same data using numerical processing techniques in software and the latency that this introduces.

There is provided a solid-state image sensor including a pixel array unit in which pixels are arrayed, the pixel including a photodiode converting an optical signal into an electrical signal, and a readout unit which reads out an analog image signal from the pixel to a signal line and processes the read out analog pixel signal in a unit of column. The readout unit includes a ΔΣ modulator which has a function to convert the analog pixel signal in to a digital signal, and an amplifier which is arranged on an input side of the ΔΣ modulator and amplifies the analog pixel signal read out to the signal line using a set gain to input the signal to the ΔΣ modulator.

A solid-state image sensor including a pixel array portion formed from a two-dimensional array of ordinary imaging pixels each having a photoelectric conversion unit and configured to output an electric signal obtained through photoelectric conversion as a pixel signal, and focus detection pixels for detecting focus. The focus detection pixels include at least a first focus detection pixel and a second focus detection pixel each having a photoelectric conversion unit and configured to transfer and output an electric signal obtained through photoelectric conversion to an output node. The first focus detection pixel and the second focus detection pixel share the output node. The first focus detection pixel includes a first photoelectric conversion unit, and a first transfer gate for reading out an electron generated through photoelectric conversion in the first photoelectric conversion unit to the shared output node.