The present disclosure provides an image sensor and an image collection system. The image sensor includes: a pixel collection circuitry array including a plurality of pixel collection circuitries, each pixel collection circuitry being configured to monitor a change in a light intensity in a field of view and enter a triggered state when the change in the light intensity meets a predetermined condition; a boundary triggered pixel determination array configured to determine a boundary triggered pixel collection circuitry in the pixel collection circuitries in the triggered state; and a reading unit configured to respond to the boundary triggered pixel collection circuitry and output address information about the boundary triggered pixel collection circuitry.

A high-accurate imaging increased in time resolution can be made. The camera device is provided with a plurality of pixels that include a light-receiving surface embedded region to convert incident light into charges, a charge accumulation region to accumulate the charges, and a gate electrode to control the charges to be transferred from the light-receiving surface embedded region to the charge accumulation region, and are one-dimensionally arranged in each of a plurality of columns, a timing generation circuit which generates a control pulse voltage to be applied to the gate electrode, and a correction circuit unit which is provided in accordance with each of a plurality of columns of the pixels, delays the control pulse voltage in a variable time, and applies the control pulse voltage to the gate electrodes of the plurality of pixels belonging to a column corresponding to the control pulse voltage.

A counter includes a sampling unit suitable for sampling a logic state of a least significant bit (LSB) during a counting hold section, the counting hold section is present between first and second ramp sections; and a toggling control unit suitable for, in response to a clock and a sampling signal outputted from the sampling unit, generating the LSB according to a first voltage level of a counting target signal during a second part of the first ramp section and generating the LSB according to a second voltage level of the counting target signal during a first part of the second ramp section.

A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.

A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.

A high dynamic range imaging pixel may include a photodiode that generates charge in response to incident light. When the generated charge exceeds a first charge level, the charge may overflow through a first transistor to a first storage capacitor. When the generated charge exceeds a second charge level that is higher than the first charge level, the charge may overflow through a second transistor. The charge that overflows through the second transistor may alternately be coupled to a voltage supply and drained or transferred to a second storage capacitor for subsequent readout. Diverting more overflow charge to the voltage supply may increase the dynamic range of the pixel. The amount of charge diverted to the voltage supply may therefore be updated to control the dynamic range of the imaging pixel.

A solid-state imaging device includes: a latch circuit that holds a digital signal of pixel data, the digital signal having 1 bit; a driver circuit that outputs the digital signal held in the latch circuit to a read bit line pair; a sense amplifier connected to the read bit line pair; and a selector circuit that selects whether the digital signal output from the sense amplifier is to be output in normal form or in inverted form.

Disclosed are a pixel unit, and an imaging method and apparatus thereof. The pixel has a first and a second pixel sub-portion each comprising one or more photodiodes; one or more transfer transistors each coupled to a floating diffusion, for transferring the charges generated by the one or more photodiodes in response to incident light during an exposure period and accumulated in the photodiode during said exposure period respectively to the floating diffusion; a reset transistor; and a source follower transistor coupled to the floating diffusion for amplifying and outputting the pixel signal of the floating diffusion. In some embodiments, the pixel further includes a capacitor and a gain control transistor.

A solid-state imaging device comprises a first pixel group includes a first photoelectric conversion unit that converts into electric charges reflection light pulses from an object irradiated with an irradiation light pulse, a first electric charge accumulation unit accumulating the electric charges in synchrony with turning on the irradiation light pulses, and a first reset unit resetting the electric charges; and a second pixel group includes a second photoelectric conversion unit that converts the reflection light into electric charges, a second electric charge accumulation unit that accumulates the electric charges synchronously with a switching the irradiation light pulses from on to off, and a second reset unit that releases a reset of the electric charges converted by the second photoelectric conversion unit.

An imaging device that reliably images an object flashing at a period closely analogous to an output period of a moving image within a certain period is provided. A first common frame image, which is synthesized from pixel signals produced by photoelectric conversion elements arranged in row selection lines from a second start row selection line to an end row selection line, is extracted from a first frame image synthesized by an image sensor starting at a first start row selection line. As a moving image, a sequence of the first common frame images and second frame images synthesized by the image sensor starting at the second start row selection line is produced. Due to the phase difference between an imaging period of the first common frame image and an imaging period of the second frame image, a flashing object is captured in any of the frame images.