The image sensor pixel may include a photodiode, a charge storage region, readout circuitry, and a transfer transistor that couples the photodiode to the charge storage region. The photodiode may generate first and second image signals during first and second exposure periods, respectively. The transfer transistor may transfer the first image signal to the charge storage region. While generating the second image signal, the readout circuitry may perform readout operations on the first image signal. Thereafter, the charge storage region may be reset to a reset voltage level. The readout circuitry may perform readout operations on the reset voltage level. Then, transfer transistor may transfer the second image signal to the charge storage region. The readout circuitry may perform readout operations on the second image signal. The readout operations on both the first and second image signals may be double sampling readouts.

Various embodiments of the present technology may comprise a method and apparatus for a pixel array. Each pixel may include multiple storage regions capable of storing pixel signals during integration. The method and apparatus may utilize the floating diffusion region as a storage region during both an integration period and readout period. The method and apparatus may store pixel signals corresponding to a first exposure periods in the floating diffusion region and pixel signals corresponding to a second exposure periods in a separate storage region.

The present disclosure relates to a solid-state imaging device capable of receiving light entering a gap between pixel regions of imaging units by the pixel region when a plurality of imaging units is arranged, a method of manufacturing the same, and an electronic device. A CMOS image sensor includes a pixel region formed of a plurality of pixels. A convex lens is provided for each of a plurality of CMOS image sensors. A plurality of CMOS image sensors is arranged on a supporting substrate. The present disclosure is applicable to a solid-state imaging device and the like in which a plurality of CMOS image sensors is arranged on the supporting substrate, for example.

An image sensor pixel having a hybrid transfer storage gate-storage diode storage node is disclosed herein. An example image sensor includes a photodiode, a storage diode, a transfer gate, and a buried storage well. The photodiode, storage diode, and buried storage well are all disposed in a semiconductor material. The transfer storage gate may be disposed on a surface of the semiconductor material between the photodiode and the storage diode. Further, the buried storage well may be disposed under the storage diode and partially under the transfer storage gate. Additionally, a length of the transfer storage gate and a length of the storage diode may be equal, and the storage diode may passivate a surface of the semiconductor material between the transfer storage gate and an output gate.

Each pixel of a global shutter back-side illuminated image sensor includes a photosensitive area. On a front surface, a first transistor includes a vertical ring-shaped electrode penetrating into the photosensitive area and laterally delimiting a memory area. The memory area penetrates into the photosensitive area less deeply than the insulated vertical ring-shaped electrode. A read area is formed in an intermediate area which is formed in the memory area. The memory area, the intermediate area and read area define a second transistor having an insulated horizontal electrode forming a gate of the second transistor. The memory area may be formed by a first and second memory areas and an output signal is generated indicative of a difference between charge stored in the first memory area and charge stored in the second memory area after a charge transfer to the first memory area.

A system for generating a depth map for an object in a three-dimensional (3D) scene includes an image capture sensor and a processor. The image capture sensor is configured to capture a plurality of images of the object at a plurality of different focal planes. The processor is configured to calculate a plurality of variance values for a plurality of image locations for each image captured by the image capture sensor. The processor is also configured to determine a peak variance value for the plurality of image locations based on the calculated variance values associated with the same image location for each of the plurality of images of the object at the plurality of different focal planes. The processor is also configured to generate the depth map for the object based on the determined peak variance value for each image location and the plurality of different focal planes.

The electronic camera has an imaging device that images a subject with subject reflectance R (%) with a dynamic range wider than that at displaying or printing to acquire image data and a recording device that converts the image data acquired by the imaging device with a predetermined function and records the converted image data and the information on the function as digital values (digit). Therefore, a printed image with an automatically or manually corrected density can be obtained at the displaying or the printing.

A bung assembly for closing an opening in a turret of a cryostat has a camera housing and bung body that is mechanically dimensioned to fit the opening, and is provided with a sealing arrangement for forming a gas-tight seal between the bung body and the turret.

Methods, apparatus, systems, and computer-readable media are provided that relate to using one or more vision sensors to capture images of a loaded pallet in association with application of stretch wrap to the loaded pallet by an automated pallet wrapping machine. The images are used to generate an image-based identifier for the loaded pallet that is then used for pallet identification by mobile robots and/or other automated agents in a warehouse or other environment. In some implementations, the images are captured by the vision sensor when the pallet is in the wrapping area of the automated pallet wrapping machine and while the vision sensor and/or the pallet are rotating. In some implementations, the image-based identifier may be assigned to pallet attributes and/or a de-palletizing scheme of the loaded pallet.

A high dynamic range imaging pixel may include a photodiode that generates charge in response to incident light. When the generated charge exceeds a first charge level, the charge may overflow through a first transistor to a first storage capacitor. When the generated charge exceeds a second charge level that is higher than the first charge level, the charge may overflow through a second transistor. The charge that overflows through the second transistor may alternately be coupled to a voltage supply and drained or transferred to a second storage capacitor for subsequent readout. Diverting more overflow charge to the voltage supply may increase the dynamic range of the pixel. The amount of charge diverted to the voltage supply may therefore be updated to control the dynamic range of the imaging pixel.