An image sensing device includes a photoelectric element configured to generate an electric charge in response to light; first and second floating diffusions configured to store the electric charge; a transfer gate having a first end connected to the photoelectric element and a second end connected to the first floating diffusion; a reset transistor configured to reset voltages of the first and second floating diffusions based on a reset signal; a first dual conversion gain (DCG) transistor having a first end connected to the first floating diffusion and a second end connected to the second floating diffusion; first and second pixel circuits configured to generate first and second output voltages based on the first and second floating diffusions; and first and second analog to digital converters configured to receive the first and second output voltages and convert them to first and second digital signals.

A stacked camera-image-sensor circuit may include (i) a first layer that includes a plurality of image sensing elements, (ii) a second layer that includes components that interface with the image sensing elements, and (iii) at least one additional layer that includes image-processing components. Various other methods, systems, and computer-readable media are also disclosed.

The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate. The signal output external terminal is electrically connected to the first through-via via a first rewiring line, the signal input external terminal is electrically connected to the second through-via via a second rewiring line, and a third rewiring line being electrically independent is arranged in a layer in which the first rewiring line and the second rewiring line are arranged. The present disclosure can be applied to, for example, the image pickup device, and the like.

To control an excess bias to an appropriate value in a light detection device. A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.

An imaging element includes: a memory that stores captured image data obtained by imaging a subject at a first frame rate; an image processing circuit that performs processing on the captured image data; and an output circuit that outputs output image data obtained by performing the processing on the captured image data to an exterior of the imaging element at a second frame rate, wherein the image processing circuit performs cut-out processing with respect to one frame of the captured image data, the cut-out processing including cutting out partial image data indicating an image of a part of the subject in the captured image data from a designated address in the memory, the output image data includes image data based on the partial image data that is cut out from the captured image data, and the first frame rate is a frame rate higher than the second frame rate.

A photoelectric conversion device including a plurality of substrates in a stacked state, the plurality of substrates including a first substrate and a second substrate electrically connected to each other, the photoelectric conversion device comprising: a memory cell unit including row-selection lines that are to be driven upon selection of a row of a memory cell array and column-selection lines that are to be driven upon selection of a column of the memory cell array; and a memory peripheral circuit unit that includes row-selection line connection portions and column-selection line connection portions so as to drive the row-selection lines and to drive the column-selection lines, wherein a first portion that is at least a part of the memory peripheral circuit unit is formed on the first substrate and the memory cell unit is formed on the second substrate.

A system includes a processor, a light source controlled by the processor and configured to emit a light, and an event based vision sensor controlled by the processor. The sensor includes a plurality of pixels. At least one of the plurality of pixels includes a photosensor configured to detect incident light and first circuitry configured to output a first signal based on an output from the photosensor. The first signal indicates a change of amount of incident light. The sensor includes a comparator configured to output a comparison result based on the first signal and at least one of a first reference voltage and a second reference voltage. The processor is configured to apply one of the first reference voltage and the second reference voltage to the comparator selectively based on an operation of the light source.

A sensor device is provided. The sensor device includes an image sensor having a plurality of photo-sensitive pixels configured to measure light received from a scene. The image sensor is configured to output image data indicative of measurement values of at least part of the plurality of photo-sensitive pixels. Additionally, the sensor device includes processing circuitry configured to determine a histogram based on the image data. The histogram represents a distribution of the measurement values. The processing circuitry is further configured to determine whether an object is present in the scene based on the histogram. In addition, the sensor device includes interface circuitry configured to output presence data indicating whether the object is present in the scene.

An imaging apparatus of the present disclosure includes: a plurality of pixel blocks that each includes a plurality of light-receiving pixels including color filters of mutually the same color, the plurality of light-receiving pixels being divided into a plurality of pixel pairs each including two light-receiving pixels; and a plurality of lenses provided at respective positions corresponding to the plurality of pixel pairs.

Pixel values are read out of an OB pixel region under a predetermined exposure condition, and predetermined processing is performed on the pixel values to derive a dark current component value. The dark current component value of a segmented pixel region is estimated from the OB dark current component value by taking into account the difference between the exposure conditions of the OB pixel region and the segmented pixel region. Specifically, a conversion ratio for calculating the dark current component value from the OB dark current component value is derived based on the ratios between exposure time and gain in the exposure conditions of the two pixel regions. This conversion ratio is applied to the pixel values of the OB pixel region or the OB dark current component value calculated from them to thereby calculate an estimated dark current component value for the exposure condition of the segmented pixel region.