[Object] To acquire distance information concerning a living tissue through an endoscope with higher accuracy irrespective of the diameter of the endoscope. [Solution] An imaging device according to the present disclosure includes: a ranging light source section configured to output ranging light for measuring a distance at a predetermined timing; an image sensor on which an image of the imaging target is formed; a ranging light image sensor on which optical feedback of the ranging light from the imaging target is imaged; a branch optical system configured to coaxially branch incident light into three types of optical paths different from one another; and a distance information calculating section configured to calculate distance information concerning the imaging target on a basis of a result of detection of the optical feedback. In the branch optical system, a first optical path among the three types of optical paths is used as an optical path configured to guide the ranging light whose applied position on the imaging target has been controlled to the imaging target, a second optical path is used as an optical path configured to form an image of the imaging target on the image sensor, and a third optical path is used as an optical path configured to image the optical feedback on the ranging light image sensor. The distance information calculating section calculates a spaced distance to the imaging target by a Time Of Flight method on the basis of the result of detection of the optical feedback.

An image sensor chip includes an internal voltage generator for generating internal voltages using an external voltage received at a first terminal of the image sensor chip, a temperature sensor for generating a temperature voltage, a selection circuit for outputting one of the external voltage, the internal voltages, and the temperature voltage, a digital code generation circuit for generating a digital code using an output voltage of the selection circuit, and a second terminal for outputting the digital code from the image sensor chip.

An image sensor including a pixel that includes: a first photoelectric conversion unit and a second photoelectric conversion unit, each of which generates an electric charge through photoelectric conversion of light; an output unit that outputs a first signal generated based upon the electric charge generated in the first photoelectric conversion unit and a second signal generated based upon an electric charge generated in the second photoelectric conversion unit; and an adjustment unit that adjusts a capacitance at the output unit upon outputting of the first signal and the second signal from the output unit.

In an imaging device, a differential stage includes an input transistor having an input node connected to a floating diffusion portion, a first control line and a second control line are located in a plurality of sets, the first control line is connected to connection portions of some sets of the plurality of sets, and the second control line is connected to connection portions of the other sets of the plurality of sets.

There is provided a solid-state imaging device including a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

The present invention provides an image sensing system (10), including a first pixel circuit (120), wherein the first pixel circuit includes a photosensitive device (PD); a first transmission gate (TG1), under the control of a first transmission signal and conducted during a first conduction time interval; and a collection gate (CG), coupled between the photosensitive device and the transmission gate and configured to receive a collecting signal (CX); and a control unit (14), configured to generate the collecting signal to the collection gate, wherein the collecting signal has a non-fixed voltage value.

An image capturing apparatus includes an area sensor on which photoelectric conversion elements are arranged two-dimensionally, and that includes a plurality of regions, a reading unit for reading, from the area sensor, signals photoelectrically converted by the photoelectric conversion elements, a focus detection unit for performing focus detection using the signals read by the reading unit, and a control unit for performing control as to from which region of the plurality of regions the reading unit preferentially reads the signals of the photoelectric conversion elements.

The present technology relates to a solid-state imaging device, a signal processing chip, and an electronic apparatus that make it possible to utilize the result of detecting an occurrence of an event in imaging. The solid-state imaging device includes: an event detection unit that detects, as an event, a change in an electrical signal generated by each pixel of a pixel array unit; a region-of-interest detection unit that detects, from a result of detecting the event, a region-of-interest of the pixel array unit; and a pixel signal generation unit that generates a pixel signal constituting an image of a region corresponding to the region-of-interest. The present technology is applicable to, for example, a sensor that detects an event that is a change in an electrical signal of a pixel.

An image sensing device is disclosed. The image sensing device includes a semiconductor substrate, a plurality of signal detectors, an insulation layer, and at least one gate. The semiconductor substrate includes a first surface and a second surface opposite to the first surface, and generates signal carriers in response to light incident upon the first surface. The signal detectors are formed on the semiconductor substrate and located closer to the second surface than the first surface of the semiconductor substrate, and detect the signal carriers using a difference in electric potential. The insulation layer is disposed at the second surface of the semiconductor substrate, and isolates the signal detectors from each other. The at least one gate is disposed at the insulation layer interposed between the signal detectors, and reflects light arriving at the second surface of the semiconductor substrate back to the semiconductor substrate.

There is provided a solid-state imaging device including: a first substrate including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated; a second substrate including a semiconductor layer and a pixel transistor, the semiconductor layer being stacked on the first substrate, and the pixel transistor that includes a gate electrode opposed to the semiconductor layer, and reads the signal electric charge of the electric charge accumulation section; and a through electrode that is provided in the first substrate and the second substrate, and electrically couples the first substrate and the second substrate to each other and is partially in contact with the gate electrode.