An imaging device according to an embodiment of the present disclosure includes: a first substrate; a second substrate; and a through wiring line. The first substrate includes a photoelectric conversion section and a first transistor in a first semiconductor substrate. The photoelectric conversion section and the first transistor are included in a sensor pixel. The second substrate is stacked on the first substrate and includes a second transistor and an opening that extends through a second semiconductor substrate. The second substrate has an adjuster on at least one of a side surface of the opening near a gate of the second transistor or a region of a surface opposed to the first transistor. The second transistor is included in the sensor pixel. The adjuster adjusts a threshold voltage of the second transistor. The through wiring line is in the opening and electrically couples the first substrate and the second substrate.

An imaging device of an embodiment has a first substrate, a second substrate, a wire, and a trench. The first substrate has a pixel having a photodiode and a floating diffusion that holds a charge converted by the photodiode. The second substrate has a pixel circuit that reads a pixel signal based on the charge held in the floating diffusion in the pixel, and is stacked on the first substrate. The wire penetrates the first substrate and the second substrate in a stacking direction, and electrically connects the floating diffusion in the first substrate to an amplification transistor in the pixel circuit of the second substrate. The trench is formed at least in the second substrate, runs in parallel with the wire, and has a depth equal to or greater than the thickness of a semiconductor layer in the second substrate.

An endoscope includes: an image sensor having a light receiving plane; a laminate provided to be opposed to an opposite side of the image sensor from the light receiving plane and having a plurality of layers formed by lamination of a plurality of semiconductor elements; and an insertion section having the image sensor and the laminate therein. The laminate includes: a first active layer in which a first active element is provided; a first passive layer in which a first passive element is provided and which is provided between the first active layer and the image sensor; and a through-silicon via provided in each of the first active layer and the first passive layer.

A substrate inspection method includes: capturing, while transporting a substrate with a fork, an image of a rear surface of the substrate using a line camera in which light receiving elements are arranged in a width direction orthogonal to a transport direction of the substrate; generating a corrected image by correcting the image captured in the capturing the image based on locus information of the fork when the substrate is being transported; and specifying feature information including a position of an abnormal portion existing on the rear surface of the substrate based on the corrected image.

Mobile terminal and image photographing method are provided. The mobile terminal includes first camera module and second camera module. First pixel array corresponding to first image sensor of the first camera module includes preset quantity of first pixel units arranged in first predetermined manner, and the first pixel unit includes first and second pixels. Second pixel array corresponding to the second image sensor includes preset quantity of second pixel units arranged in second predetermined manner, and the second pixel unit includes first pixel. The first pixel includes red, green, and blue subpixels. The second pixel includes the green subpixel and infrared subpixel, and at least one of the red subpixel and the blue subpixel. The first pixel and the second pixel are full-pixel dual-core focus pixels, and each of the first pixel and the second pixel includes four full-pixel dual-core focus subpixels.

An image sensing device includes a pixel array including a plurality of pixels, each of pixels configured to generate a pixel signal corresponding to intensity of incident light, and a plurality of grid structures, each grid structure disposed to overlap with a boundary between adjacent pixels among the plurality of pixels and configured to include an air layer so as to optically isolate the adjacent pixels. Each of the grid structures includes regions that form a cross shape.

A solid-state imaging element of the present disclosure a pixel. The pixel includes a charge accumulation unit that accumulates a charge photoelectrically converted by a photoelectric conversion unit, a reset transistor that selectively applies a reset voltage to the charge accumulation unit, an amplification transistor having a gate electrode electrically connected to the charge accumulation unit, and a selection transistor connected in series to the amplification transistor. Additionally, the solid-state imaging element includes a first wiring electrically connecting the charge accumulation unit and the gate electrode of the amplification transistor, a second wiring electrically connected to a common connection node of the amplification transistor and the selection transistor and formed along the first wiring, and a third wiring electrically connecting the amplification transistor and the selection transistor.

An image sensor is provided. The image sensor includes a pixel array including first and second pixels, the first and second pixels receiving the same transfer gate signal and outputting first and second signal voltages, respectively, a transfer gate driver receiving first and second voltages and generating the transfer gate signal, the transfer gate signal having the first voltage as its maximum voltage and having the second voltage as its minimum voltage and a compensation module detecting a variation in the second voltage, generating a compensation voltage based on the variation in the second voltage, and performing a compensation operation.

An imaging device includes a first chip on which a plurality of first blocks is arranged in a matrix, and a second chip which includes a first block scanning circuit and a second block scanning circuit. The second chip includes a selection circuit configured to select driving timing given to a plurality of pixels, based on a signal output from the first block scanning circuit and a signal output from the second block scanning circuit. A second block includes a circuit other than the selection circuit.

Provided are a solid state imaging device, an imaging apparatus, and an imaging method that may acquire a desired image without using a frame memory. The solid state imaging device includes: a sensor unit that generates pulses at a frequency in accordance with a frequency of photon reception; a count unit that generates an image signal by counting the number of signals generated from the sensor unit; and a processing unit that performs a predetermined process on a count value obtained in acquisition of a first image signal, and the count unit combines a second image signal and a value obtained by performing a predetermined process on the count value obtained in the acquisition of the first image signal to generate a third image signal.