A second substrate including a pixel circuit that outputs a pixel signal on a basis of electric charges outputted from the sensor pixel and a third substrate including a processing circuit that performs signal processing on the pixel signal are provided. The first substrate, the second substrate, and the third substrate are stacked in this order. A semiconductor layer including the pixel circuit is divided by an insulating layer. The insulating layer divides the semiconductor layer to allow a center position of a continuous region of the semiconductor layer or a center position of a region that divides the semiconductor layer to correspond to a position of an optical center of the sensor pixel, in at least one direction on a plane of the sensor pixel perpendicular to an optical axis direction.

An imaging device according to an embodiment of the present disclosure includes: a first semiconductor substrate (100) provided with pixels including a photoelectric conversion element (PD) and floating diffusion (FD) that temporarily holds a charge output from the photoelectric conversion element (PD); and a semiconductor layer (200Y) provided on the first semiconductor substrate (100) via an insulating film (123), the semiconductor layer (200Y) including a readout circuit unit (539) that reads out the charge held in the floating diffusion (FD) and outputs a pixel signal, in which the semiconductor layer (200Y) is formed of an organic semiconductor material.

An image capturing element according to the present disclosure includes a pixel array formed by a plurality of pixels arranged in an array on a substrate, each of the plurality of pixels including a photoelectric conversion element, a transparent layer formed on the pixel array, and a spectroscopic element array formed by a plurality of spectroscopic elements arranged in an array, and each of the plurality of spectroscopic elements is at a position corresponding to one of the plurality of spectroscopic elements inside or on the transparent layer. Each of the plurality of spectroscopic elements includes a plurality of microstructures formed from a material having a refractive index higher than a refractive index of the transparent layer. The plurality of microstructures have a microstructure pattern. Each of the plurality of spectroscopic elements separates incident light into deflected light beams having different propagation directions according to the wavelength and emits the deflected light beams.

An electronic device is provided. The electronic device includes an image sensor including a plurality of pixels, an AP processing unit, a memory, and a control unit. Each pixel included in the plurality of pixels includes a plurality of photodiodes and a microlens. The control unit provides at least one of a first piece of AF data and a second piece of AF data to the AF processing unit, and the AF processing unit may execute a first phase autofocus (PAF) operation based on the first piece of AF data or execute a second PAF operation based on the second piece of AF data.

An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.

An image sensor includes a pixel portion in which a plurality of unit pixels each having one micro lens and a plurality of photoelectric conversion portions are arrayed in a matrix, a signal readout portion that reads out signals accumulated in the photoelectric conversion portions and converts the read signals to digital signals, a signal processor that processes signals read out by the signal readout portion and has an image capture signal processor that performs signal processing for generating a captured image on signals read out by the signal readout portion and a focus detection signal processor that performs signal processing for focus detection on signals read out by the signal readout portion, and an output portion that outputs signals processed by the signal processor.

The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a plurality of pixel regions disposed within a substrate and respectively comprising a photodiode configured to receive radiation that enters the substrate from a back-side. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions surrounding the photodiode. The BDTI structure extends from the back-side of the substrate to a first depth within the substrate. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel regions overlying the photodiode. The MDTI structure extends from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure is a continuous integral unit having a ring shape.

To generate a value unique to a device in a more preferable mode. A solid-state image sensor includes a plurality of unit pixels disposed in a two-dimensional array, and a drive control unit that controls a first drive to output signals from the unit pixels included in a first unit pixel group of the plurality of unit pixels as an image signal, and a second drive to detect variations in respective signals from two or more of the unit pixels included in a second unit pixel group of the plurality of unit pixels, in which the first unit pixel group and the second unit pixel group have different structures from each other.

An image sensing device and a fingerprint sensing method are provided. The image sensing device is suitable for being installed in an electronic device. The image sensing device includes a light sensor and a controller. The controller is coupled to the light sensor. When the electronic device is operated in a sleep mode, the controller operates the light sensor in a light sensing mode. The controller determines whether a number of signal intensity changes of a photosensitive signal output by the light sensor exceeds a predetermined number of intensity changes within a predetermined length of time, so as to switch the operation of the light sensor in a fingerprint sensing mode.

A plurality of comparison circuits each including a first terminal for inputting a first analog signal and a second analog signal and a second terminal connected to a wiring for transmission of a ramp signal A first operation changes an electric potential of the wiring from a predetermined electric potential to a first electric potential to cause at least one of the plurality of comparison circuits to retain a first offset. A second operation, after the first operation, converts the first analog signal into a digital signal. A third operation, after the second operation, changes the electric potential of the wiring to an electric potential included in a range of from the predetermined electric potential to the first electric potential. A fourth operation, after the third operation, converts the second analog signal into a digital signal.