Provided is a light emitting device having a phosphor layer on a surface of a semiconductor light emitting element and reducing unevenness in light distribution color, and a method of manufacturing the same. A light emitting device 100 includes a light emitting element 20 with a supporting body which is composed of a semiconductor light emitting element 1 and a supporting body 10, and a phosphor layer 7 which continuously covers an upper surface and side surfaces of the semiconductor light emitting element 1, and side surfaces of the supporting body 10. The phosphor layer 7 is configured such that at least a lower portion of the side surface of the supporting body 10 is thinner than the upper surface and the side surface of the semiconductor light emitting element 1. Such a configuration of the phosphor layer can be formed by applying a spray-coating of a slurry containing phosphor particles and a thermosetting resin in a solvent on the semiconductor light emitting element 1 side of the light emitting element 20 which has the supporting body.

A light emitting device (100) according to the present disclosure includes a base substrate (10) having a recessed portion (15) at its upper surface (11); a light emitting element (20) provided in the recessed portion (15); and a sealing member (30) provided in the recessed portion (15), in which the sealing member (30) contains surface-treated particles (40), or particles (40) coexisting with a dispersing agent, and at least a part of an edge portion of the sealing member (30) is a region located in the vicinity of an edge (17) of the recessed portion, and in which at least one of the particles (40) and aggregates (41) of particles are unevenly distributed.

An LED package structure includes a base, an LED chip disposed on the base, at least one metal wire, a phosphor sheet, and an encapsulation resin disposed in the base and encapsulating the LED chip, the metal wire, and the phosphor sheet. The LED chip has at least one electrode thereon. The metal wire has an apex and a loop height being defined by the apex. The metal wire is electrically connected to the electrode and the base. The phosphor sheet includes a B-stage resin and a plurality of phosphor powders mixed therewith. The phosphor sheet is adhered to the LED chip by the B-stage resin capable of viscosity and covers the top surface, the side surface, and the electrode of the LED chip. A thickness of the phosphor sheet is smaller than the loop height, and the apex of the metal wire is exposed from the phosphor sheet.

Embodiments of the invention include a plurality of light emitting devices (1), one of the light emitting devices in the plurality being configured to emit light having a first peak wavelength. A wavelength converting layer (30) is disposed in a path of light emitted by the plurality of light emitting devices. The wavelength converting layer (30) absorbs light emitted by the light emitting device and emits light having a second peak wavelength. The light emitting devices (1) are mechanically connected to each other only through the wavelength converting layer (30). In other embodiments a light converting layer is placed over the light emitting devices and an adhesive or optical element layer is placed at the side surfaces and over the light converting layer, the light emitting devices are mechanically connected to each other only through the wavelength converting layer.

A method of manufacturing a glass-phosphor composite is disclosed. The method comprises: preparing rare earth ion-containing parent glass; mixing the rare-earth ion-containing parent glass in a power state with a phosphor in a powder state; and providing a glass-phosphor composite using the powder mixture of the rare earth ion-containing parent glass and the phosphor, wherein the mixing includes mixing the rare earth ion-containing parent glass in the powder state with the phosphor in the powder state so that the phosphor in the glass-phosphor composite is in an amount of 5 wt % to 30 wt %, and the preparing includes using a glass frit having a glass transition point of 300 C. to 800 C. and a sintering temperature of 200 C. to 600 C.

The present invention relates to polarized light emissive films, and to a preparation thereof. The invention also relates to use of the polarized light emissive film in an optical device. The invention further relates to an optical device and to a preparation thereof.

The invention further relates to a mixture comprising a plural of inorganic fluorescent semiconductor quantum rods, and to use of the mixture for preparing the polarized light emissive film.

The present invention furthermore relates to a polarized light emissive nanofiber, to use and to a preparation thereof.

A light source using a wavelength conversion member is increased in brightness. A wavelength conversion element 11 includes a plurality of wavelength conversion members 12 bundled together, each containing a dispersion medium and phosphor powder dispersed in the dispersion medium.

The disclosure relates to a LED lighting device and a packaging method. The LED lighting device comprises a frame and at least one chip fixed in the frame, and further comprises a light emitting layer and a light condensing layer, wherein the light emitting layer wraps the chip, and the light condensing layer is arranged on the light emitting layer and configured for converging light passing through the light emitting layer.

A light-emitting device includes a light-emitting element, a sealing material for sealing the light-emitting element, a phosphor particle having an average particle size of not more than 20 nm and dispersed in the sealing material, a dispersed particle dispersed in the sealing material and forming a three-dimensional network structure in the sealing material, and a light-scattering particle dispersed in the sealing material, having an average particle size greater than that of the phosphor particle and that of the dispersed particle, and having a refractive index greater than that of the sealing material. A concentration gradient of the phosphor particle in a height direction is formed such that a concentration thereof increases according as a position thereof decreases. An average position of the phosphor particle is lower than that of the light-scattering particle.

A light-emitting device includes a light-emitting semiconductor component that emits first light in a first wavelength range during operation A wavelength conversion element converts the first light at least partly into second light in a second wavelength range is arranged in the beam path of the first light. The second wavelength range differs from the first wavelength range. The wavelength conversion element includes nanoparticles containing organic luminescent molecules in a basic material formed from an SiO2-based material. A method for producing a light-emitting device is furthermore specified.