The present disclosure relates to an integrated chip. The integrated chip includes a memory device surrounded by a dielectric structure disposed over a substrate. The memory device includes a data storage structure disposed between a bottom electrode and a top electrode. A top electrode via couples the top electrode to an upper interconnect wire. A first line is tangent to a first outermost sidewall of the top electrode via and a second line is tangent to an opposing second outermost sidewall of the top electrode via. The first line is oriented at a first angle with respect to a horizontal plane that is parallel to an upper surface of the substrate and the second line is oriented at a second angle with respect to the horizontal plane. The second angle is less than the first angle.

A method includes depositing a plurality of layers, which includes depositing a spin orbit coupling layer, depositing a dielectric layer over the spin orbit coupling layer, depositing a free layer over the dielectric layer, depositing a tunnel barrier layer over the free layer, and depositing a reference layer over the tunnel barrier layer. The method further includes performing a first patterning process to pattern the plurality of layers, and performing a second patterning process to pattern the reference layer, the tunnel barrier layer, the free layer, and the dielectric layer. The second patterning process stops on a top surface of the spin orbit coupling layer.

Various embodiments of the present disclosure are directed towards a memory device including a free layer overlying a reference layer. A tunnel barrier layer overlies the reference layer disposed over a semiconductor substrate. The free layer overlies the tunnel barrier layer, and a capping layer overlies the free layer. A shunting structure includes a conductive material that vertically extends continuously from an outer sidewall of the free layer to an outer sidewall of the capping layer.

In some embodiments, the present disclosure relates to a memory device that includes a spin orbit torque (SOT) layer arranged over a substrate. A magnetic tunnel junction (MTJ) structure may be arranged over the SOT layer. The MTJ structure includes a free layer, a reference layer, and a diffusion barrier layer disposed between the free layer and the reference layer. A first conductive wire is arranged below the SOT layer and coupled to the SOT layer. A second conductive wire is arranged below the SOT layer and coupled to the SOT layer. A third conductive wire is arranged over the MTJ structure. The memory device further includes a first selector structure arranged between the first conductive wire and the SOT layer.

A magnetoresistive element that has a magnetic material made of an alloy having a stable bcc structure containing Co as a main component, has an excellent tunnel magnetoresistive ratio, and can be put into practical use by mass production, and a magnetic storage device using the magnetoresistive element are provided. The magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially fixed, a second magnetic layer whose magnetization direction is changeable, and a non-magnetic layer arranged between the first magnetic layer and the second magnetic layer. The first magnetic layer and/or the second magnetic layer has an alloy having a bcc structure containing Co as a main component and Co and Mn.

A memory includes: a substrate, having a plurality of active regions arranged in an array and a plurality of word lines extending in a first direction, the active regions being inclined at a preset angle to the word lines, the active region having at least one access transistor; a plurality of bit lines, extending in a second direction perpendicular to the first direction; magnetic tunnel junctions, one end of the magnetic tunnel junction is electrically connected to one of bit lines and another end of the magnetic tunnel junction is electrically connected to two access transistors, the two access transistors electrically connected to the magnetic tunnel junction being located in two adjacent active regions, respectively.

Embodiments of the present invention include multiple independent terminals for a plurality of devices in a stack configuration within a semiconductor. In one embodiment, a semiconductor comprises: a first device at a first semiconductor level within a multi terminal device stack; wherein the first device is coupled to a first terminal; a second device at a second semiconductor level within the multi terminal device stack, wherein the second device is coupled to a second terminal; and a third terminal is coupled to the first device, wherein the first terminal and second terminal are independently coupled to the first device and second device respectively. The third terminal can be coupled to the second device. The first terminal, the second terminal, and third terminal and couple components included in the multi terminal stack to components not included in the multi terminal stack.

A magnetic memory device including a substrate; a first and second magnetic pattern stacked on the substrate; a tunnel barrier pattern between the first and second magnetic pattern; a bottom electrode between the substrate and the first magnetic pattern; a seed pattern between the bottom electrode and the first magnetic pattern; and a diffusion barrier pattern between the bottom electrode and the seed pattern, wherein a bottom surface of the at least one diffusion barrier pattern is in contact with a top surface of the bottom electrode, and a top surface of the at least one diffusion barrier pattern is in contact with a bottom surface of the seed pattern, the at least one diffusion barrier pattern includes a non-magnetic metal, or an alloy of the non-magnetic metal and a non-metal element, and the non-magnetic metal includes Ta, W, Nb, Ti, Cr, Zr, Hf, Mo, Al, Mg, or V.

A method for manufacturing an interconnection structure for an integrated circuit is provided. The integrated circuit includes a first insulating layer, a second insulating layer, and a third insulating layer. Electrical contacts pass through the first insulating layer, and a component having an electrical contact region is located in the second insulating layer. The method includes etching a first opening in the third layer, vertically aligned with the contact region. A fourth insulating layer is deposited to fill in the opening, and a second opening is etched to the contact region by passing through the opening in the third insulating layer. A metal level is formed by filling in the second opening with a metal.

A method includes providing a structure having a memory region and a logic region; a first metal layer and a dielectric barrier layer over the first metal layer in both the memory region and the logic region; a first dielectric layer over the dielectric barrier layer; multiple magnetic tunneling junction (MTJ) devices over the first metal layer, the dielectric barrier layer, and the first dielectric layer; and a second dielectric layer over the first dielectric layer and the MTJ devices. The first dielectric layer, the MTJ devices, and the second dielectric layer are in the memory device region and not in the logic device region. The method further includes depositing an extreme low-k (ELK) dielectric layer using FCVD over the memory region and the logic region; and buffing the ELK dielectric layer to planarize a top surface of the ELK dielectric layer.