A magnetoresistive memory device includes first electrode, a second electrode that is spaced from the first electrode, and a perpendicular magnetic tunnel junction layer stack located between the first electrode and the second electrode. The perpendicular magnetic tunnel junction layer stack includes a first texture-breaking nonmagnetic layer including a first nonmagnetic transition metal, a second texture-breaking nonmagnetic layer including a second nonmagnetic transition metal, a magnesium oxide dielectric layer located between the first and second texture-breaking nonmagnetic layers, a reference layer located between the first and second texture-breaking nonmagnetic layers, a free layer located between the first and second texture-breaking nonmagnetic layers, and a spinel layer located between the reference layer and the free layer, and including a polycrystalline spinel material having (001) texture along an axial direction extending between the reference layer and the free layer.

A described example includes: a semiconductor die including a Hall sensor arranged in a first plane that is parallel to a device side surface of the semiconductor die; a passivated magnetic concentrator including a magnetic alloy layer formed over the device side surface of the semiconductor die, the upper surface of the magnetic alloy layer covered by a layer of polymer material; a backside surface of the semiconductor die opposite the device side surface mounted to a die side surface of a die pad on a package substrate, the semiconductor die having bond pads on the device side surface spaced from the magnetic concentrator; electrical connections coupling the bond pads of the semiconductor die to leads of the package substrate; and mold compound covering the magnetic concentrator, the semiconductor die, the electrical connections, a portion of the leads, and the die side surface of the die pad.

Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.

The present invention provides a method for the production of a polymer-coated graphene layer structure, the method comprising: providing a substrate on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form a graphene layer structure on the substrate, wherein the inlets are cooled to less than 100° C. and the susceptor is heated to a temperature of at least 50° C. in excess of a decomposition temperature of the precursor, wherein the graphene layer structure has a first charge carrier density, spin-coating a composition having a second charge carrier density onto the graphene layer structure to form an air-impermeable coating, wherein the coated graphene layer structure has a third charge carrier density which is less than the first charge carrier density, wherein the composition comprises a polymer or polymer precursor.

A magnetic sensor includes a magneto-sensitive portion (105); an excitation wiring (110) formed in a wiring region above the magneto-sensitive portion (105) through intermediation of an insulating film (12), the excitation wiring (110) including a plurality of conductor portions (1101, 1102, 1103, 1104, and 1105) arranged in in order across at least one radial direction from a center axis of the magneto-sensitive portion (105); a current flowing through the excitation wiring (110) having a current density of which an absolute value becomes zero in a vicinity of a center of the magneto-sensitive portion (105) and continuously increases toward an outer side of the magneto-sensitive portion (105); and a magnetic field generated by the current flowing through the excitation wiring (110) in a direction vertical to the surface of the magneto-sensitive portion (105).

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

A spin current magnetization rotational element according to the present disclosure includes a first ferromagnetic metal layer configured for a direction of magnetization to be changed and a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer. The spin-orbit torque wiring includes a narrow portion, and at least a part of the narrow portion constitutes a junction to the first ferromagnetic metal layer.

A spin current magnetization rotational element according to the present disclosure includes a first ferromagnetic metal layer configured for a direction of magnetization to be changed and a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer. The spin-orbit torque wiring includes a narrow portion, and at least a part of the narrow portion constitutes a junction to the first ferromagnetic metal layer.

An integrated Hall sensor is provided with: a main wafer (10) of semiconductor material having a substrate (101) with a first surface (101a) and a second surface (101b), opposite to the first surface (101a) along a vertical axis (y); Hall sensor terminals (1, 2, 3, 4; 1′, 2′, 3′, 4′) arranged at least one of the first and second surfaces (101a, 101b) of the substrate (101); an isolation structure (109) in the substrate (101) defining a Hall sensor plate (103) of the integrated Hall sensor, the Hall sensor terminals being arranged in the isolation structure (109). The integrated Hall sensor moreover has a test or calibration coil integrated in the wafer (10), having a plurality of windings formed, at least in part, by metal portions (130b, 170b; 130a, 170a) arranged above the first and second surfaces (101a, 101b) of the substrate (101) and defining an inner volume (1001) entirely enclosing the Hall sensor plate (103).

A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.